Download or read book Reactive Ion Etching of InP Using Hydrocarbons written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper deals with the development of an etch recipe for the etching of InP by Reactive ion etching (RIE), a vital process step in the fabrication of microstructures. RIE is a dry etching scheme, wherin effective pattern transfer can be achieved due to its inherent anisotropic characteristics for certain process conditions. RIE is preferred to other dry etching schemes since it is simple, robust and is widely used in industry. The main aim of our research is to design micromechanically tunable optical filters for wavelength division multiplexing (WDM) systems. In this system, transmission takes place in the second and third optical communication window, namely in the region of zero material dispersion (1300 nm) and minimum attenuation (1550 nm) respectively. InP based devices are widely used for this application since they are compatible with the above mentioned WDM transmission wavelengths. The key properties investigated in this thesis were the material etch rate, the selectivity of the material with res to the mask, the side wall steepness and the surface morphology. The examined process parameters have been the rf-power, the flow rate, the pressure inside the chamber, the substrate temperature and the various ratios of gas combinations. Improved values of etch rate and selectivity have been achieved with respect to past results by optimizing the process conditions. Etch rates as high as 120 nm/min have been achieved using CH4 / H2 with infinite values of selectivity for certain process parameters. Measurements have also been made on InP samples using the scanning electron microscope and the atomic force microscope for determining the side wall steepness and the roughness of the etched surface. Side wall slopes close to 90° and surface roughnesses below 0.4 nm (rms) have been achieved. The earlier reported problems of polymer deposition on top of the mask was strongly suppressed. In addition measurements have been carried out on various samples to establish pr.
Download or read book Reactive Ion Etching of Indium Phosphide based Heterostructures and Field effect Transistors Using Hydrogen Bromide Plasma written by Sambhulal Agarwala and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A new highly selective reactive ion etching process based on HBr plasma for the removal of InGaAs over InAlAs has been developed and the results are presented. The etch selectivity at a self-bias voltage of $-$100 V is over 160, which is the highest that has been reported for this material system so far. High etch selectivity is maintained over a wide range of chamber pressure and plasma self-bias voltages. The mechanism of this etch selectivity is determined to be due to the formation of involatile Al$sb2$O$sb3$. Selective HBr etching has been applied as the gate-recess process in the fabrication of InAlAs/InGaAs heterostructure FETs. Since less RIE-induced damage was observed in delta-doped structures, delta-doping was employed in all InP-based HFETs. The dc and rf device parameters of a typical 0.75-$mu$m gate-length transistor compare favorably with those of a corresponding device gate-recessed with a selective wet-etching technique. An extrinsic current-gain cutoff frequency of 150 GHz is obtained for a typical 0.2 $mu$m gate-length HFET device that was fabricated using selective HBr gate recess process. RIE-induced damage is characterized extensively using a variety of techniques such as AES, XPS, and SIMS analyses, Raman scattering, Hall measurements and Schottky characteristics. No significant degradation in surface properties is observed. The lattice damage in layer structures with 2DEG depth of greater than 20 nm was minimal. It is also observed that with increasing self-bias voltage the rate of removal of InGaAs increases faster than the rate of introduction of damage. An exponential distribution of damage with 1/e penetration depth of about 7.8 nm has been obtained. The exponential distribution of defects suggests that either ion channeling or diffusion is the possible mechanism of defect production in regions deeper than the projected range.
Download or read book Analytical Techniques for the Characterization of Compound Semiconductors written by G. Bastard and published by Elsevier. This book was released on 1991-07-26 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
Download or read book Indium Phosphide and Related Materials written by Avishay Katz and published by Artech House Publishers. This book was released on 1992 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents an integrated survey of the most recent research, engineering development and commercial application of indium phosphide and related materials. The book is tutorial in nature, rich in application-engineering detail and emphasizes the designing and implementing of practical devices.
Download or read book International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 2000 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Beam Modification of Materials written by J.S. Williams and published by Newnes. This book was released on 2012-12-02 with total page 1157 pages. Available in PDF, EPUB and Kindle. Book excerpt: This conference consisted of 15 oral sessions, including three plenary papers covering areas of general interest, 22 specialist invited papers and 51 contributed presentations as well as three poster sessions. There were several scientific highlights covering a diverse spectrum of materials and ion beam processing methods. These included a wide range of conventional and novel applications such as: optical displays and opto-electronics, motor vehicle and tooling parts, coatings tailored for desired properties, studies of fundamental defect properties, the production of novel (often buried) compounds, and treating biomedical materials. The study of nanocrystals produced by ion implantation in a range of host matrices, particularly for opto-electronics applications, was one especially new and exciting development. Despite several decades of study, major progress was reported at the conference in understanding defect evolution in semiconductors and the role of defects in transient impurity diffusion. The use of implantation to tune or isolate optical devices and in forming optically active centres and waveguides in semiconductors, polymers and oxide ceramics was a major focus of several presentations at the conference. The formation of hard coatings by ion assisted deposition or direct implantation was also an area which showed much recent progress. Ion beam techniques had also developed apace, particularly those based on plasma immersion ion implantation or alternative techniques for large area surface treatment. Finally, the use of ion beams for the direct treatment of cancerous tissue was a particularly novel and interesting application of ion beams.
Download or read book Reactive Ion Etching of Indium based Compounds Using Methane hydrogen argon written by Jeffrey Emerson Schramm and published by . This book was released on 1995 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analytical Techniques for the Characterization of Compound Semiconductors written by Gerald Bastard and published by North Holland. This book was released on 1991 with total page 566 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
Download or read book Leading edge Semiconductor Research written by Thomas B. Elliot and published by Nova Publishers. This book was released on 2005 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined , including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir-Blodgett films; resists, lithography and metallisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package- related failure mechanisms; effects of operational and environmental stresses on reliability.
Download or read book JJAP written by and published by . This book was released on 1998 with total page 972 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Solid state Lasers written by Thomas O. Hardwell and published by Nova Publishers. This book was released on 2008 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: A solid-state laser use and gain medium that is a solid, rather than a liquid such as dye lasers or a gas such as gas lasers. Semiconductor-based lasers are also in the solid state, but are generally considered separately from solid-state lasers. Generally, the active medium of a solid-state laser consists of a glass or crystalline host material to which is added a dopant such as neodymium, chromium, erbium, or other ions. Many of the common dopants are rare earth elements, because the excited states of such ions are not strongly coupled with thermal vibrations of the crystalline lattice (phonons), and the lasing threshold can be reached at relatively low brightness of pump. There are many hundreds of solid-state media in which laser action has been achieved, but relatively few types are in widespread use. Of these, probably the most common type is neodymium doped YAG. Neodymium-doped glass (Nd:glass) and Ytterbium-doped glasses and ceramics are used in solid-state lasers at extremely high power (terawatt scale), high energy (megajoules) multiple beam systems for inertial confinement fusion. Titanium doped sapphire is also widely used for its broad tunability. This book gathers new research in the field.
Download or read book JJAP Letters written by and published by . This book was released on 1997 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book State of the Art Program on Compound Semiconductors 46 SOTAPOCS 46 and Processes at the Semiconductor Solution Interface 2 written by C. O'Dwyer and published by The Electrochemical Society. This book was released on 2007 with total page 647 pages. Available in PDF, EPUB and Kindle. Book excerpt: Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.
Download or read book Eighth International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 1996 with total page 812 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Seventh International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 1995 with total page 892 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chlorine Reactive Ion Beam Etching Studies of Indium containing III V Materials written by Eugene E. Lemoine and published by . This book was released on 1995 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Optical Modulators written by Koichi Wakita and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: The introduction of GaAs/ AIGaAs double heterostructure lasers has opened the door to a new age in the application of compound semiconductor materials to microwave and optical technologies. A variety and combination of semiconductor materials have been investigated and applied to present commercial uses with these devices operating at wide frequencies and wavelengths. Semiconductor modulators are typical examples of this technical evolutions and hsve been developed for commercial use. Although these have a long history to date, we are not aware of any book that details this evolution. Consequently, we have written a book to provide a comprehensive account of semiconductor modulators with emphasis on historical details and experimantal reports. The objective is to provide an up-to-date understanding of semiconductor modulators. Particular attention has been paid to multiple quantum well (MQW) modulators operating at long wavelengths, taking into account the low losses and dispersion in silica fibers occuring at around 1.3 and 1.55 mm. At the present time, MQW structures have been investigated but these have not been sufficiently developed to provide characteristic features which would be instructive enough for readers. One problem is the almost daily publication of papers on semiconductor modulators. Not only do these papers provide additional data, but they often modify the interpretations of particular concepts. Almost all chapters refer to the large number of published papers that can be consulted for future study.
