Download or read book Rapid Thermal Annealing of Silicon Implanted Gallium Arsenide written by John Stuart Kleine and published by . This book was released on 1986 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Thermal Annealing of Ion Implanted Layers in Gallium Arsenide written by Mark R. Wilson and published by . This book was released on 1986 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effects of Rapid Thermal Annealing on Gallium Arsenide Grown by MOCVD on Silicon Substrates written by LeNore Louise Lehman and published by . This book was released on 1988 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Thermal Processing of Semiconductors written by Victor E. Borisenko and published by Springer Science & Business Media. This book was released on 2013-11-22 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
Download or read book A Comparison of Epitaxial Layers and Undoped Semi insulating Substrates for Use in Silicon Implantation Into Gallium Arsenide written by Alison Schary and published by . This book was released on 1988 with total page 654 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Annealing and Solid Phase Epitaxy of Ion implanted Gallium Arsenide by Rapid Thermal Processing written by Walter George Opyd and published by . This book was released on 1989 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid thermal Annealing of ion implanted silicon written by Chi-Chien Ho and published by . This book was released on 1986 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Application of Rapid Thermal Annealing to Arsenic Implanted Single crystal and Polycrystalline Silicon written by Judy Lynn Hoyt and published by . This book was released on 1987 with total page 225 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation Damage and Annealing Effects Studies of Silicon Implanted Gallium Arsenide written by Samuel C. Ling and published by . This book was released on 1982 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation damage and low temperature (200 degrees-600 degrees C) annealing behavior of 120 keV silicon and selenium ion implants into gallium arsenide have been investigated by Rutherford Backscattering-Channeling and Transmission Electron Microscopy techniques. Lattice location studies of Si implants after high temperature annealing (850 degrees and 950 degrees C) have been conducted using Proton Induced X-Ray Emission method. (Author).
Download or read book Gallium Arsenide III written by P. Kordoš and published by Trans Tech Publications Ltd. This book was released on 1989-01-01 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the 3rd International Conference on Physics & Technology of GaAs and other III-V Semiconductors, Lomnica, CSFR, December 1988
Download or read book Characteristics of Rapid Thermal Annealing in Ion Implanted Silicon written by O. W. Holland and published by . This book was released on 1984 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Thermal Annealing of Si Implanted GaAs in Arsenic Overpressure written by and published by . This book was released on 1904 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A new method of rapid thermal annealing (RTA) in arsenic overpressure using a high thermal mass reactor and a very low thermal mass substrate holder has been developed. Efficient activation of Si implantation has been obtained only with proper As overpressure. The design of the substrate holder allowed a very uniform activation of the implanted layers as well as a negligible formation of dislocation slips. This method of rapid thermal annealing was successfully applied to the fabrication of broadband 4-8 GHz MMIC amplifiers.
Download or read book Gallium Arsenide Integrated Circuit Technology written by Richard Morton and published by . This book was released on 2000 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study on the Rapid Thermal Annealing Process of Low energy Arsenic and Phosphorous Ion implanted Silicon by Reflective Second Harmonic Generation written by Kuang-yao Lo and published by . This book was released on 2005 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Thermal Annealing of Donor Implants in Galium Arsenide written by R. Bensalem and published by . This book was released on 1986 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
