Download or read book Random Telegraph Signals in Submicron Mosfets written by Nuditha Vibhavie Amarasinghe and published by . This book was released on 2001 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization Methods for Submicron MOSFETs written by Hisham Haddara and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.
Download or read book Modeling the Switching Magnitude of Random Telegraph Signals in Subthreshold Nanoscale MOSFETs written by Ming-Jer Chen and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization Methods for Submicron Mosfets written by Hisham Haddara and published by . This book was released on 1996-01-31 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) is a key component in modern microelectronics. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements making the task of MOSFET characterization increasingly crucial, as well as more difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples. It was thus unavoidable to develop new models and new characterization methods, or at least adapt the existing ones to cope with the special nature of these new phenomena. Characterization Methods for Submicron MOSFETs deals with techniques which show high potential for characterization of submicron devices. Throughout the book the focus is on the adaptation of such methods to resolve measurement problems relevant to VLSI devices and new materials, especially Silicon-on-Insulator (SOI). Characterization Methods for Submicron MOSFETs was written to provide help to device engineers and researchers to enable them to cope with the challenges they face. Without adequate device characterization, new physical phenomena and new types of defects or damage may not be well identified or dealt with, leading to an undoubted obstruction of the device development cycle. Audience: Researchers and graduate students familiar with MOS device physics, working in the field of device characterization and modeling. Also intended for industrial engineers working in device development, seeking to enlarge their understanding of measurement methods. The book additionally addresses device-based characterization for material and process engineers and for circuit designers. A valuable reference that may be used as a text for advanced courses on the subject.
Download or read book A Signal Theoretic Introduction to Random Processes written by Roy M. Howard and published by John Wiley & Sons. This book was released on 2015-07-07 with total page 742 pages. Available in PDF, EPUB and Kindle. Book excerpt: A fresh introduction to random processes utilizing signal theory By incorporating a signal theory basis, A Signal Theoretic Introduction to Random Processes presents a unique introduction to random processes with an emphasis on the important random phenomena encountered in the electronic and communications engineering field. The strong mathematical and signal theory basis provides clarity and precision in the statement of results. The book also features: A coherent account of the mathematical fundamentals and signal theory that underpin the presented material Unique, in-depth coverage of material not typically found in introductory books Emphasis on modeling and notation that facilitates development of random process theory Coverage of the prototypical random phenomena encountered in electrical engineering Detailed proofs of results A related website with solutions to the problems found at the end of each chapter A Signal Theoretic Introduction to Random Processes is a useful textbook for upper-undergraduate and graduate-level courses in applied mathematics as well as electrical and communications engineering departments. The book is also an excellent reference for research engineers and scientists who need to characterize random phenomena in their research.
Download or read book Noise in Nanoscale Semiconductor Devices written by Tibor Grasser and published by Springer Nature. This book was released on 2020-04-26 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
Download or read book Temperature and Gate Voltage Dependence of Random Telegraph Switching in MOSFETs written by Nicholas Borland and published by . This book was released on 1993 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: We performed experiments on a type of transistor known as a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), hoping to discover how the magnitude of the noise in these devices depended on temperature and gate voltage. In the process we learned that the 1/f noise is actually the superposition of many Random Telegraph Signals (RTSs), which are fluctuations between two electron states that cause a change in the resistance of the transistor. It is generally believed that these fluctuations arise when defects in the device create localized electron energy levels that may trap a carrier. Thus, learning about the specific properties of these fluctuations can give us insight into the nature of the defects themselves. By studying small devices and lowering the temperature to the 5-200K range, it was possible to observe individual fluctuators and thus discover what these properties are.
Download or read book Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices written by Josef Sikula and published by Springer Science & Business Media. This book was released on 2006-02-21 with total page 371 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of recently developed experimental methods for noise research in nanoscale electronic devices, conducted by specialists in transport and stochastic phenomena in nanoscale physics. The approach described is to create methods for experimental observations of noise sources, their localization and their frequency spectrum, voltage-current and thermal dependences. Our current knowledge of measurement methods for mesoscopic devices is summarized to identify directions for future research, related to downscaling effects. The directions for future research into fluctuation phenomena in quantum dot and quantum wire devices are specified. Nanoscale electronic devices will be the basic components for electronics of the 21st century. From this point of view the signal-to-noise ratio is a very important parameter for the device application. Since the noise is also a quality and reliability indicator, experimental methods will have a wide application in the future.
Download or read book Modeling the Statistical Variability of Random Telegraph Signals Induced Threshold Voltage Shifts in Nanoscale MOSFETs and FinFETs written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling the Statistical Distribution of Random Telegraph Signals Magnitudes and Induced Threshold Voltage Shifts in Subthreshold Nanoscale MOSFETs written by and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Temperature Electronics written by Edmundo A. Gutierrez-D. and published by Academic Press. This book was released on 2001 with total page 985 pages. Available in PDF, EPUB and Kindle. Book excerpt: Summarizes the advances in cryoelectronics starting from the fundamentals in physics and semiconductor devices to electronic systems, hybrid superconductor-semiconductor technologies, photonic devices, cryocoolers and thermal management. This book provides an exploration of the theory, research, and technologies related to cryoelectronics.
Download or read book Ultra Low Noise CMOS Image Sensors written by Assim Boukhayma and published by Springer. This book was released on 2017-11-28 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis provides a thorough noise analysis for conventional CIS readout chains, while also presenting and discussing a variety of noise reduction techniques that allow the read noise in standard processes to be optimized. Two physical implementations featuring sub-0.5-electron RMS are subsequently presented to verify the proposed noise reduction techniques and provide a full characterization of a VGA imager. Based on the verified noise calculation, the impact of the technology downscaling on the input-referred noise is also studied. Further, the thesis covers THz CMOS image sensors and presents an original design that achieves ultra-low-noise performance. Last but not least, it provides a comprehensive review of CMOS image sensors.
Download or read book Low Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Download or read book Investigation of Random Telegraph Signal and Hot Carrier Degradation in Advanced MOSFETs written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Strain Engineered MOSFETs written by C.K. Maiti and published by CRC Press. This book was released on 2018-10-03 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
Download or read book Modeling the Statistical Variability of Process and Random Telegraph Signals Induced Threshold Voltage Shifts in Nanoscale MOSFETs and FinFETs written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Noise In Physical Systems And 1 f Fluctuations Proceedings Of The 14th International Conference written by C Claeys and published by World Scientific. This book was released on 1997-06-01 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt: The recent conferences in this series were organised in Montreal (1987), Budapest (1989), Kyoto (1991), St Louis (1993) and Palanga (1995). The aim of the conference was to bring together specialists in fluctuation phenomena from different fields and to make a bridge between theoretical scientists and more applied or engineering oriented researchers. Therefore a broad variety of topics covering the fundamental aspects of noise and fluctuations as well as applications in various fields are addressed. Noise in materials, components, circuits and electronic, biological and other physical systems are discussed.
