Download or read book Radiation Response and Reliability of AlGaN GaN HEMTs written by Jin Chen and published by . This book was released on 2013 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation Response and Reliability of High Speed AlGaN GaN HEMTs written by Jin Chen and published by . This book was released on 2016 with total page 95 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Bias Dependence of Radiation Response and Reliability of AlGaN GaN HEMTs written by Rong Jiang and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book AlGaN GaN HEMTs Reliability Degradation Modes and Analysis written by Ponky Ivo and published by Cuvillier. This book was released on 2012-10-25 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: AlGaN/GaN HEMTs reliability and stability issues were investigated in dependence on epitaxial design and process modification. DC-Step-Stress-Tests have been performed on wafers as a fast device robustness screening method. As a criterion of robustness they deliver a critical source-drain voltage for the onset of degradation. Several degradation modes were observed which depend on epi design, epi quality and process technology. Electrical and optical characterizations together with electric field simulations were performed to get insight into respective degradation modes. It has been found that AlGaN/GaN HEMT devices with GaN cap show higher critical source-drain voltages as compared to non-capped devices. Devices with low Al concentration in the AlGaN barrier layer also show higher critical source-drain voltages. Superior stability and robustness performance have been achieved from devices with AlGaN backbarrier epi design grown on n-type SiC substrate. For the onset on any degradation modes the presence of high electrical fields is most decisive for ON- and OFF-state operation conditions. Therefore careful epi design to reduce high electric field is mandatory. It is also shown that epi buffer quality and growth process have a great impact on device robustness. Defects such as point defects and dislocations are assumed to be created initially during stressing and accumulated to larger defect clusters during device stressing. Electroluminescence (EL) measurements were performed to detect early degradation. Extended localized defects are resulting as bright spots at OFF-state conditions in conjunction with a gate leakage increase.
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Download or read book Reliability Studies of AlGaN GaN HEMTs with High k Dielectrics written by and published by . This book was released on 2015 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Current Instabilities Passivation Effects and Other Reliability Aspects in AlGaN GaN HEMTs for Microwave Applications written by Fabiana Rampazzo and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Noise in Nanoscale Semiconductor Devices written by Tibor Grasser and published by Springer Nature. This book was released on 2020-04-26 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
Download or read book Investigation of Electrical Bias Mechanical Stress Temperature and Ambient Effect on AlGaN GaN Hemt Time Dependent Degradation written by Amit Gupta and published by . This book was released on 2013 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: AlGaN/GaN HEMT technology is promising for RF and high power applications. However commercial usability of this technology is currently hindered because of its limited electrical reliability which still remains a major concern. AlGaN/GaN HEMTs have been shown to degrade irreversibly under typical device operation and there is widespread disagreement on the underlying fundamental physics for the observed device degradation. Electrical degradation in AlGaN/GaN HEMTs due to DC stressing is studied typically by performing electrical step stress tests and a critical voltage is determined. Device degradation is characterized by changes measured in electrical parameters, such as increase in Rs and RD, decrease in IDsat, decrease in gm, Vt shift and sub-threshold change. The widely accepted theory attributes such degradation to the inverse piezoelectric effect. Electric field due to applied bias generates biaxial tensile stress which together with intrinsic stress from lattice mismatch increases the elastic energy of AlGaN layer.
Download or read book Advanced Device Reliability Study of GaN HEMTs Using Low Frequency Noise Spectroscopy written by Hemant P. Rao and published by . This book was released on 2012 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt: The channel is found be to immune to the stress. The role of impurity diffusion as a precursor to catastrophic degradation is also pointed out. Key bias points are identified which result in permanent trap creation at the AlGaN/GaN channel interface. The role of hot-carriers as a failure mechanism is discussed by measuring electron temperature profiles in the channel. Finally degradation of the gate stack under RF overdrive stress is studied and the activation energy and the trap location of a point defect center in the AlGaN barrier is extracted.
Download or read book Center for the Radiation Studies and Solutions written by and published by . This book was released on 1999 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: The influence of the radiation to the performance of the GaN-based and GaAs-based electronic devices was investigated extensively. In order to study the effects upon various devices, several novel device structures (such as p-capped AlGaN/GaN HEMTs and GOI GaAs pHEMTs) as well as new processing techniques were developed. The radiation induced traps, the forward and reserved biased currents of the diodes and the DC current-voltage characteristics of HEMTs and HBTs were investigated as a function of gamma-ray and proton radiation energy and total dose. The degradation mechanisms were discussed. The research indicated that GaN has an intrinsically low susceptibility to radiation-induced material degradation and GaN-based electronic devices appear to be excellent candidates for use in space systems.
Download or read book Advanced Processing of GaN and GaN based Devices written by Haijing Yu and published by . This book was released on 2004 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation is focused on three fields: ultra-high temperature annealing of GaN, activation of implanted GaN and the implantation incorporation into AlGaN/GaN HEMT processing, with an aim to increase the performance, manufacturability and reliability of AlGaN/GaN HEMTs.
Download or read book Nuclear Tracks in Solids written by Robert L. Fleischer and published by Univ of California Press. This book was released on 2024-03-29 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: This title is part of UC Press's Voices Revived program, which commemorates University of California Press’s mission to seek out and cultivate the brightest minds and give them voice, reach, and impact. Drawing on a backlist dating to 1893, Voices Revived makes high-quality, peer-reviewed scholarship accessible once again using print-on-demand technology. This title was originally published in 1975.
Download or read book GaN SiC Power Technologies 5 written by K. Shenai and published by The Electrochemical Society. This book was released on 2015 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Download or read book High frequency AlGaN GaN HEMTs Fabrication and Noise Characterization written by Alexei Vasilievich Vertiatchikh and published by . This book was released on 2004 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book AlGaN GaN HEMT power amplifiers with optimized power added efficiency for X band applications written by Jutta Kühn and published by KIT Scientific Publishing. This book was released on 2011 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
