Download or read book Radiation Effects on Junction Field effect Transistors JFETS MOSFETs and Bipolar Transistors as Related to SSC Circuit Design written by and published by . This book was released on 1990 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Some results of radiation effects on selected junction field-effect transistors, MOS field-effect transistors, and bipolar junction transistors are presented. The evaluations include dc parameters, as well as capacitive variations and noise evaluations. The tests are made at the low current and voltage levels (in particular, at currents ≤1 mA) that are essential for the low-power regimes required by SSC circuitry. Detailed noise data are presented both before and after 5-Mrad [gamma] total-dose exposure. SPICE radiation models for three high-frequency bipolar processes are compared for a typical charge-sensitive preamplifier.

Download or read book Radiation Effects on Junction Field effect Transistors JFETS MOSFETs and Bipolar Transistors as Related to SSC Circuit Design written by E.J. Dennedy and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Detector Research And Development For The Superconducting Super Collider Proceedings Of The Symposium written by Valerie Kelly and published by World Scientific. This book was released on 1991-05-29 with total page 852 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the last three years a significant program of detector technology research and development for high luminosity, high energy hadron-hadron colliders has been underway in the United States, Japan and Europe. In as much as the first formal steps have been undertaken to initiate the experimental program at the Superconducting Super Collider (SSC), it is appropriate to assess in detail the status of this R&D effort.Results and Plans for Advanced Technology R&D for Particle Physics Detectors Appropriate for SSC Experiments are Presented. Specific Topics include: Calorimetry; Particle Tracking and Identification Techniques; Vertex-Detection; Magnets; Front-End Electronics; Data Acquisition Electronics; Techniques in Triggering; Data Transmission; Data Analysis and Simulation Software; Studies on Radiation Damage to Materials and Electronics.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Research on the Radiation Effects and Compact Model of SiGe HBT written by Yabin Sun and published by Springer. This book was released on 2017-10-24 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

Download or read book Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices written by Ronald D Schrimpf and published by World Scientific. This book was released on 2004-07-29 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.

Download or read book Government reports annual index written by and published by . This book was released on 199? with total page 1646 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1334 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book JFET SOS Junction Field Effect Transistor Silicon on Sapphire Devices Gamma Radiation Induced Effects written by Linda F. Halle and published by . This book was released on 1988 with total page 29 pages. Available in PDF, EPUB and Kindle. Book excerpt: Enhancement and depletion mode JFETs have been fabricated on silicon-on-sapphire substrates. When these devices are irradiated under bias with a 60Co source, their drain currents increase, and their threshold voltages shift in such a way that the devices become more difficult to pinch off. These effects can be explained by positive charge trapping at the silicon/sapphire interface. Gate to drain leakage currents also increase, and can be traced to interface effects at the gate edges rather than to the passivating oxide. These effects were studied as a function of dose rate and postirradiation annealing. Deep-level transient spectroscopy (DLTS) was performed prior to and following both irradiation and anneal on both the gate-drain and gate-source p-n junctions. DLTS trap bands were observed whose characteristics depended on the depth of the depletion layer and on the total gamma dose received. The DLTS spectra suggest that a continuum of levels is responsible for the bands, and that the emission kinetics are influenced by band bending at the Si/sapphire interface. The major bands corresponded in temperature with steps in capacitance-temperature curves. A correlation of these steps with the transistor characteristics suggests that channel pinch off can be influenced by capture and emission at deep centers. Keywords: Cobalt 60; Deep level transient spectroscopy; Junction field effect transistor; Radiation effects; Silicon on insulator; Silicon on sapphire; Transistor; Semiconductors devices.

Download or read book Government Reports Announcements Index written by and published by . This book was released on 1991-03 with total page 1004 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Effects of Radiation on Electronic Systems written by George Messenger and published by Springer. This book was released on 1992-05-14 with total page 984 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Effects in Semiconductors and Semiconductor Devices written by V. S. Vavilov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Effects in Semiconductor Devices written by Frank Larin and published by . This book was released on 1968 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Effects on Semiconductor Devices written by Los Alamos Scientific Laboratory and published by . This book was released on 1961 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Effects in Electronics written by and published by . This book was released on 1965 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Effects on Integrated Circuits and Systems for Space Applications written by Raoul Velazco and published by Springer. This book was released on 2019-04-10 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with invaluable overviews and updates of the most important topics in the radiation-effects field, enabling them to face significant challenges in the quest for the insertion of ever-higher density and higher performance electronic components in satellite systems. Readers will benefit from the up-to-date coverage of the various primary (classical) sub-areas of radiation effects, including the space and terrestrial radiation environments, basic mechanisms of total ionizing dose, digital and analog single-event transients, basic mechanisms of single-event effects, system-level SEE analysis, device-level, circuit-level and system-level hardening approaches, and radiation hardness assurance. Additionally, this book includes in-depth discussions of several newer areas of investigation, and current challenges to the radiation effects community, such as radiation hardening by design, the use of Commercial-Off-The-Shelf (COTS) components in space missions, CubeSats and SmallSats, the use of recent generation FPGA’s in space, and new approaches for radiation testing and validation. The authors provide essential background and fundamentals, in addition to information on the most recent advances and challenges in the sub-areas of radiation effects. Provides a concise introduction to the fundamentals of radiation effects, latest research results, and new test methods and procedures; Discusses the radiation effects and mitigation solutions for advanced integrated circuits and systems designed to operate in harsh radiation environments; Includes coverage of the impact of Small Satellites in the space industry.