Download or read book Radiation Effects in Silicon Carbide SiC Micro Nanoelectromechanical Systems M NEMS written by Hailong Chen and published by . This book was released on 2020 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation is of great importance in both fundamental science (e.g., understanding black holes, exploring the time evolution and the origin of the universe) and technological applications (e.g., diagnosing and treating diseases in medicine, and producing electricity at nuclear plant). Among all the radiation studies, radiation in semiconductor materials attracts the most attention in the information era with numerous semiconductor devices operating in space and on earth. Although silicon (Si) still dominates the semiconductor industry, a number of wide bandgap (WBG) semiconductors have demonstrated advantages in harsh environment applications. Among them, silicon carbide (SiC), with a family of polytypes and excellent properties such as wide bandgap (2.3-3.2 eV), high displacement energies (20-35 eV), excellent elastic modulus (~200-700 GPa) and outstanding thermal conductivity (~500 W m-1K-1), has shown great potential for high temperature, high power, and radiation resistant applications. A quite large body of work has been performed during recent decades to understand the radiation effects in the SiC electronic devices, such as field effect transistors (FETs), bipolar junction transistors (BJTs), and diodes. Meantime, while micro/nanoelectromechanical systems (M/NEMS) have gained tremendous advancements and made great impact on many important applications including inertial sensing (e.g., gyroscopes, accelerators), radio-frequency (RF) signal processing and communication, radiation study in M/NEMS has been quite limited, especially for those based on beyond-Si materials. This dissertation makes an initial thrust toward investigating radiation effects in SiC M/NEMS. First, we develop an innovative 3D integrated MEMS platform, by exploiting a scheme consisting of an array of vertically stacked SiC thin diaphragms (and Si ones for comparison). This integrated design and configuration not only scientifically enables probing different radiation effects (with clear reference and control samples) in a 3D fashion, but also economically evades very expensive, repetitive tests on individual devices. Further, we demonstrate cantilever-shaped 3C-SiC multimode MEMS resonators for real-time detection of ultraviolet (UV) radiation. In parallel, we have also developed Si counterparts of the SiC devices to help elucidate how SiC behaves differently from Si for radiation sensing and detecting. Finally, we explore the displacement and ionizing irradiation effects in SiC NEMS switching devices to gain comprehensive and in-depth understanding of the science behind the radiation effects in nanoscale structures made of thin SiC on SiO2. The investigation of NEMS switches before, during, and after proton and X-ray irradiation reveals how energetic particles cause threshold voltage modification, due to the dislocation damage in SiC crystal and how ionizing effects may affect the performance of these nanoscale devices.

Download or read book Radiation Effects in Silicon Carbide written by A.A. Lebedev and published by Materials Research Forum LLC. This book was released on 2017 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.

Download or read book Silicon Carbide Micro Electromechanical Systems for Harsh Environments written by Rebecca Cheung and published by Imperial College Press. This book was released on 2006 with total page 193 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique book describes the science and technology of silicon carbide (SiC) microelectromechanical systems (MEMS), from the creation of SiC material to the formation of final system, through various expert contributions by several leading key figures in the field. The book contains high-quality up-to-date scientific information concerning SiC MEMS for harsh environments summarized concisely for students, academics, engineers and researchers in the field of SiC MEMS. This is the only book that addresses in a comprehensive manner the main advantages of SiC as a MEMS material for applications in high temperature and harsh environments, as well as approaches to the relevant technologies, with a view progressing towards the final product. Sample Chapter(s). Chapter 1: Introduction to Silicon Carbide (SIC) Microelectromechanical Systems (MEMS) (800 KB). Contents: Introduction to Silicon Carbide (SiC) Microelectromechanical Systems (MEMS) (R Cheung); Deposition Techniques for SiC MEMS (C A Zorman et al.); Review of Issues Pertaining to the Development of Contacts to Silicon Carbide: 1996OCo2002 (L M Porter & F A Mohammad); Dry Etching of SiC (S J Pearton); Design, Performance and Applications of SiC MEMS (S Zappe). Readership: Academic researchers in MEMS and industrial engineers engaged in SiC MEMS research."

Download or read book Silicon Carbide Microsystems for Harsh Environments written by Muthu Wijesundara and published by Springer Science & Business Media. This book was released on 2011-05-17 with total page 247 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods towards system level integration of components and key challenges are evaluated and discussed based on the current state of SiC materials processing and device technology. Issues such as temperature mismatch, process compatibility and temperature stability of individual components and how these issues manifest when building the system receive thorough investigation. The material covered not only reviews the state-of-the-art MEMS devices, provides a framework for the joining of electronics and MEMS along with packaging into usable harsh-environment-ready sensor modules.

Download or read book Silicon Carbide Microelectromechanical Systems For Harsh Environments written by Rebecca Cheung and published by World Scientific. This book was released on 2006-06-29 with total page 193 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique book describes the science and technology of silicon carbide (SiC) microelectromechanical systems (MEMS), from the creation of SiC material to the formation of final system, through various expert contributions by several leading key figures in the field. The book contains high-quality up-to-date scientific information concerning SiC MEMS for harsh environments summarized concisely for students, academics, engineers and researchers in the field of SiC MEMS.This is the only book that addresses in a comprehensive manner the main advantages of SiC as a MEMS material for applications in high temperature and harsh environments, as well as approaches to the relevant technologies, with a view progressing towards the final product./a

Download or read book Advancing Silicon Carbide Electronics Technology II written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2020-03-15 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).

Download or read book Radiation Effects in Silicon Carbide written by Tomonori Baba and published by . This book was released on 2018 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Effects and Micromechanics of SiC written by and published by . This book was released on 1992 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: The basic displacement damage process in SiC has been fully explored, and the mechanisms identified. Major modifications have been made to the theory of damage dosimetry in Fusion, Fission and Ion Simulation studies of Sic. For the first time, calculations of displacements per atoms in SiC can be made in any irradiation environment. Applications to irradiations in fusion first wall neutron spectra (ARIES and PROMETHEUS) as well as in fission spectra (HIFIR and FFTF) are given. Nucleation of helium-filled cavities in SiC was studied, using concepts of stability theory to determine the size of the critical nucleus under continuous generation of helium and displacement damage. It is predicted that a bimodal distribution of cavity sizes is likely to occur in heavily irradiated SiC. A study of the chemical compatibility of SiC composite structures with fusion reactor coolants at high-temperatures was undertaken. It was shown that SiC itself is chemically very stable in helium coolants in the temperature range 500--1000[degree]C. However, current fiber/matrix interfaces, such as C and BN are not. The fracture mechanics of high-temperature matrix cracks with bridging fibers is now in progress. A fundamentally unique approach to study the propagation and interaction of cracks in a composite was initiated. The main focus of our research during the following period will be : (1) Theory and experiments for the micro-mechanics of high-temperature failure; and (2) Analysis of radiation damage and microstructure evolution.

Download or read book Silicon Carbide Technology for Micro and Nano electromechnical Systems Applications written by Di Gao and published by . This book was released on 2004 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide Micro Electromechanical Systems for Harsh Environments written by and published by . This book was released on 2006 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Shall We Tax Philanthropy written by and published by . This book was released on 1906* with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Effect of Grain Size on the Radiation Response of Silicon Carbide and Its Dependence on Irradiation Species and Temperature written by and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years the push for green energy sources has intensified, and as part of that effort accident tolerant and more efficient nuclear reactors have been designed. These reactors demand exceptional material performance, as they call for higher temperatures and doses. Silicon carbide (SiC) is a strong candidate material for many of these designs due to its low neutron cross-section, chemical stability, and high temperature resistance. The possibility of improving the radiation resistance of SiC by reducing the grain size (thus increasing the sink density) is explored in this work. In-situ electron irradiation and Kr ion irradiation was utilized to explore the radiation resistance of nanocrystalline SiC (nc-SiC), SiC nanopowders, and microcrystalline SiC. Electron irradiation simplifies the experimental results, as only isolated Frenkel pairs are produced so any observed differences are simply due to point defect interactions with the original microstructure. Kr ion irradiation simulates neutron damage, as large radiation cascades with a high concentration of point defects are produced. Kr irradiation studies found that radiation resistance decreased with particle size reduction and grain refinement (comparing nc-SiC and microcrystalline SiC). This suggests that an interface-dependent amorphization mechanism is active in SiC, suggested to be interstitial starvation. However, under electron irradiation it was found that nc-SiC had improved radiation resistance compared to single crystal SiC. This was found to be due to several factors including increased sink density and strength and the presence of stacking faults. The stacking faults were found to improve radiation response by lowering critical energy barriers. The change in radiation response between the electron and Kr ion irradiations is hypothesized to be due to either the change in ion type (potential change in amorphization mechanism) or a change in temperature (at the higher temperatures of the Kr ion irradiation, critical energy barriers can be overcome without the assistance of stacking faults). The dependence of the radiation response of SiC on grain size is not as straight forward as initially presumed. The stacking faults present in many nc-SiC materials boost radiation resistance, but an increased number of interfaces may lead to a reduction in radiation response.

Download or read book Ion Irradiation induced Microstructural Change in SiC written by Chien-Hung Chen and published by . This book was released on 2015 with total page 117 pages. Available in PDF, EPUB and Kindle. Book excerpt: The high temperature radiation resistance of nuclear materials has become a key issue in developing future nuclear reactors. Because of its mechanical stability under high-energy neutron irradiation and high temperature, silicon carbide (SiC) has great potential as a structural material in advanced nuclear energy systems. A newly developed nano-engineered (NE) 3C SiC with a nano-layered stacking fault (SFs) structure has been recently considered as a prospective choice due to enhanced point defect annihilation between layer-type structures, leading to outstanding radiation durability. The objective of this project was to advance the understanding of gas bubble formation mechanisms under irradiation conditions in SiC. In this work, microstructural evolution induced by helium implantation and ion irradiation was investigated in single crystal and NE SiC. Elastic recoil detection analysis confirmed that the as-implanted helium depth profile did not change under irradiation to 30 dpa at 700 °C. Helium bubbles were found in NE SiC after heavy ion irradiation at a lower temperature than in previous literature results. These results expand the current understanding of helium migration mechanism of NE SiC under high temperature irradiation environment. No obvious bubble growth was observed after ion irradiation at 700 °C, suggesting a long helium bubble incubation process under continued irradiation at this temperature and dose. As determined by electron energy loss spectroscopy measurements, only 1 % of the implanted helium atoms are trapped in bubbles. Helium redistribution and release was observed in the TEM samples under in-situ irradiation at 800 °C. In-situ TEM analysis revealed that the nano-layered SF structure is radiation tolerant below a dose of about 15 dpa at 800 °C, but continued irradiation to 20 dpa under these in-situ conditions leads to loss of the stacking fault structure, which may be a manifestation of irradiating thin TEM foils. The irradiation stability of the SF structure under bulk irradiation remains unknown. This stacking fault structure is critical since it suppresses the formation of dislocation loops normally observed under these irradiation conditions. Systematic studies towards understanding the role of defect migration under irradiation on the evolution of helium bubbles in NE SiC were performed. Keywords SiC, Irradiation, Helium Bubble, TEM/STEM, EELS, In-situ, ERDA

Download or read book Security Opportunities in Nano Devices and Emerging Technologies written by Mark Tehranipoor and published by CRC Press. This book was released on 2017-11-22 with total page 455 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research community lacks both the capability to explain the effectiveness of existing techniques and the metrics to predict the security properties and vulnerabilities of the next generation of nano-devices and systems. This book provides in-depth viewpoints on security issues and explains how nano devices and their unique properties can address the opportunities and challenges of the security community, manufacturers, system integrators, and end users. This book elevates security as a fundamental design parameter, transforming the way new nano-devices are developed. Part 1 focuses on nano devices and building security primitives. Part 2 focuses on emerging technologies and integrations.

Download or read book Stress Analysis of Silicon Carbide Microelectromechanical Systems Using Raman Spectroscopy written by Stanley J. Ness and published by . This book was released on 2003-03-01 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the fabrication of Micro-Electro-Mechanical Systems (MEMS), residual stress is often induced in the thin films that are deposited to create these systems. These stresses can cause the device to fail due to buckling, curling, or fracture. Government and industry are looking for ways to characterize the stress during the deposition of thin films in order to reduce or eliminate device failure. Micro-Raman spectroscopy has been successfully used to analyze poly-silicon MEMS devices made with the Multi-User MEMS Process (MUMPS trade name). Micro-Raman spectroscopy was selected because it is nondestructive, fast and has the potential for in situ stress monitoring. This research attempts to validate the use of Raman spectroscopy to analyze the stress in MEMS made of silicon carbide (SiC) using the Multi-User Silicon Carbide surface micromachining (MUSiCsm) process. Surface interferometry of fixed-fixed beam arrays and comb drive resonance test are employed to determine stress and compare it to the Raman values. Research also includes baseline spectra of 6H, 4H, and 15R poly-types of bulk SiC. Raman spectra of 1- to 2- micrometers thick 3C-SiC thin films deposited on silicon, silicon nitride, and silicon oxide substrates are presented as an attempt to establish a baseline spectra for 3C-SiC, the poly-type of SiC found in MEMS made with the MUSiCsm process.

Download or read book Radiation Effects on Microelectromechanical Systems written by Wenjun Liao and published by . This book was released on 2018 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Polycristalline Silicon and Silicon Carbide for Industrial Applications written by Marco Rossi and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: