Download or read book Proceedings of the International Conference on Quantum Structure Infrared Photodetectors QSIP 2009 Yosemite California 18 23 January 2009 written by Sarath D. Gunapala and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the international conference on quantum structure infrared photodetectors written by and published by . This book was released on 2009 with total page 441 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Quantum Structure Infrared Photodetectors written by Riccardo Introzzi and published by LAP Lambert Academic Publishing. This book was released on 2010-07 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum structure Infrared Photoetectors (QsIPs) are based on Intersubband transitions. GaAs mature technology makes Quantum Well Infrared Photodetectors (QWIPs) very attractive for their flexibility to enhanced device functionality and ease of integration with optoelectronic devices. Quantum Dot Infrared Photodetectors (QDIPs), based on 3-D confinement, are an evolution of QWIPs. They are expected to achieve higher detectivities. Charge transport has been investigated by current noise analysis, on QWIPs and QDIPs. Peculiar dynamics, beyond the expectations of noise models in literature, have been evidenced experimentally in QWIPs. An analytical model, based on a Langevin approach, has been developed and qualitatively reproduced real noise spectra. QDIP high performances have been hampered, so far, by homogeneity lack in self-assemble growing technology. Photoresponsivity and Noise spectra were found closely related to quantum dot inhomogeneity. Further insights has been added in the complex new phenomena observed in QDIPs. This work should help specialists as well anyone else who may be interested in better understanding the complex physics of QsIPs and the investigation methods.
Download or read book The Physics Of Quantum Well Infrared Photodetectors written by Kwong-kit Choi and published by World Scientific. This book was released on 1997-06-12 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past, infrared imaging has been used exclusively for military applications. In fact, it can also be useful in a wide range of scientific and commercial applications. However, its wide spread use was impeded by the scarcity of the imaging systems and its high cost. Recently, there is an emerging infrared technology based on quantum well intersubband transition in III-V compound semiconductors. With the new technology, these impedances can be eliminated and a new era of infrared imaging is in sight. This book is designed to give a systematic description on the underlying physics of the new detectors and other issues related to infrared imaging.
Download or read book Quantum Well Infrared Photodetectors written by Harald Schneider and published by Springer. This book was released on 2006-10-18 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs). It is assumed that the reader has a basic background in quantum mechanics, solid-state physics, and semiconductor devices. To make this book as widely accessible as possible, the treatment and presentation of the materials is simple and straightforward. The topics for the book were chosen by the following criteria: they must be well-established and understood; and they should have been, or potentially will be, used in practical applications. The monograph discusses most aspects relevant for the field but omits, at the same time, detailed discussions of specialized topics such as the valence-band quantum wells.
Download or read book Proceedings of the International Conference on Quantum Structure Infrared Photodetector QSIP 2010 written by C. Besikci and published by . This book was released on 2011 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the International Conference on Quantum Structure Infrared Photodetector QSIP 2010 Istanbul Turkey 15 20 August 2010 written by Cengiz Beşikçi and published by . This book was released on 2011 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the International Conference on Quantum Structure Infrared Photodetector Held in Corsica from June 18 to 22 2012 Carg se 31 Papers written by and published by . This book was released on 2013 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the International Conference on Quantum Structure Infrared Photodetector 8th International Workshop on Santa Fe New Mexico from June 29th July 3rd 2014 written by and published by . This book was released on 2015 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Quaternary Capped In Ga As GaAs Quantum Dot Infrared Photodetectors written by Sourav Adhikary and published by Springer. This book was released on 2017-09-06 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.
Download or read book Intersubband Infrared Photodetectors written by Victor Ryzhii and published by World Scientific. This book was released on 2003-06-25 with total page 359 pages. Available in PDF, EPUB and Kindle. Book excerpt: Infrared technologies are very important for a wide range of military, scientific and commercial applications. Devices and systems based on semiconductor heterostructure and quantum well and quantum dot structures open up a new era in infrared technologies.This book deals with various topics related to the latest achievements in the development of intersubband infrared photodetectors, reviewed by top experts in the field. It covers physical aspects of the operation of the devices as well as details of their design in different applications. The papers included in the book will be useful for researchers and engineers interested in the physics of optoelectronic devices as well as their practical design and applications.
Download or read book Intersubband Infrared Photodetectors written by V. Ryzhii and published by World Scientific. This book was released on 2003 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: Infrared technologies are very important for a wide range of military, scientific and commercial applications. Devices and systems based on semiconductor heterostructure and quantum well and quantum dot structures open up a new era in infrared technologies.This book deals with various topics related to the latest achievements in the development of intersubband infrared photodetectors, reviewed by top experts in the field. It covers physical aspects of the operation of the devices as well as details of their design in different applications. The papers included in the book will be useful for researchers and engineers interested in the physics of optoelectronic devices as well as their practical design and applications.
Download or read book Advances in Infrared Photodetectors written by and published by Elsevier. This book was released on 2011-05-03 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the "Willardson and Beer" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry. Written and edited by internationally renowned experts Relevant to a wide readership: physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry
Download or read book Quantum Dot Photodetectors written by Xin Tong and published by Springer Nature. This book was released on 2021-09-17 with total page 319 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a comprehensive overview of state-of-the-art quantum dot photodetectors, including device fabrication technologies, optical engineering/manipulation strategies, and emerging photodetectors with building blocks of novel quantum dots (e.g. perovskite) as well as their hybrid structured (e.g. 0D/2D) materials. Semiconductor quantum dots have attracted much attention due to their unique quantum confinement effect, which allows for the facile tuning of optical properties that are promising for next-generation optoelectronic applications. Among these remarkable properties are large absorption coefficient, high photosensitivity, and tunable optical spectrum from ultraviolet/visible to infrared region, all of which are very attractive and favorable for photodetection applications. The book covers both fundamental and frontier research in order to stimulate readers' interests in developing novel ideas for semiconductor photodetectors at the center of future developments in materials science, nanofabrication technology and device commercialization. The book provides a knowledge sharing platform and can be used as a reference for researchers working in the fields of photonics, materials science, and nanodevices.
Download or read book Long Wave 8 12 Micrometers Quantum Dot Infrared Photodetectors written by and published by . This book was released on 2005 with total page 13 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the Final Report of ARO Grant No. DAADl9-02-l-0437. It is a report on the characteristics of(InGa)As/GaAs long-wave (8-12 um) quantum-dot infrared photodetector structures. Pcak responsivities and dctectivitics were measured using a calibrated black body source. The results of this work indicate that for the structures characterized here, the maximum operating temperature is limited to %O5 K. No effort was made in the original design of the device structure for higher temperature operation. For operation at temperatures higher than this, one must investigate other device structures; such structures have been identified and will be the subject of future work. The work reported here has paved the way to the identification of candidate device structures for high operating temperature (HOT) quantum-dot detector.
Download or read book Corrugated Quantum Well Infrared Photodetectors and Arrays written by and published by . This book was released on 1999 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum well infrared photodetectors (QWIPs) have many advantages in infrared detection, mainly due to the mature Ill-V material technology. The employment of the corrugation structure further advances the technology by providing a simple, yet efficient light-coupling scheme. A C-QWIP enjoys the same flexibility as a detector with intrinsic normal incident absorption. In this paper, we will discuss the utilities of C-QWIPs in different applications, including two-color detection and polarization-sensitive detection. Besides practical applications, C-QWIPs are also useful in detector characterization. They can be used for measuring the absorption coefficient of light propagating parallel to the layers under bias and providing information on the energy resolved photoconductive gain. These two quantities have never been measured before. Based on the corrugation design, we have made several modifications that further improve the detector sensitivity without increasing its complexity. Other than the C-QWIP structure, we also continue searching for other sensitive detector architectures. In a quantum grid infrared photodetector, 3-dimensional electron confinement can be achieved, with which the detector is able to absorb light in all directions. At the same time, the photoconductive gain can also be improved. We further improve the design using a blazed structure. All the experimental results are supported by a rigorous electromagnetic modal transmission-line theory developed especially for these types of structures. Preliminary thermal imaging using C-QWIP FPAs validates the advantages of the present approach.
Download or read book Quantum Dot Infrared Photodetectors Based on Structures with Potential Barriers written by Li-Hsin Chien and published by . This book was released on 2011 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is known that major restrictions of room-temperature semiconductor photodetectors and some other optoelectronic devices are caused by short photoelectron lifetime, which strongly reduces the photoresponse. Detectors based on nanostructures with potential barriers have the strong potential to overcome the limitations in quantum well photodetectors due to various possibilities for engineering of specific kinetic and transport properties. Here I review photocarrier kinetics in traditional quantum dot infrared photodetectors and present results of the investigations related to the quantum-dot (QD) structures with potential barriers created around dots and with collective barriers surrounding groups of quantum dots (planes, clusters etc). To optimize the photodetectors based on QD structures, I develop and exploit a model of the room-temperature QD photodetector. Using Monte-Carlo simulations, I investigate photoelectron capture and transit processes, as functions of selective doping of a QD structure, its geometry, and applied electric field. The simulation results demonstrate that the capture processes are substantially suppressed by the collective potential barriers around the groups of QDs. Detailed analysis shows that the effects of the electric field can be explained by electron heating, i.e. field effects become significant, when the shift of the electron temperature due to electron heating reaches the barrier height. Besides manageable photoelectron kinetics, which allows one to employ QDIP as an adaptive detector with changing parameters, the advanced QD structures will also provide high coupling to radiation, low generation-recombination noise, and high scalability.
