Download or read book Properties of the Nitrogen Isoelectronic Trap in the Group Iii v Semiconductor Alloys Gallium Arsenide Phosphide and Indium Gallium Phosphide written by and published by . This book was released on 1972 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of the Nitrogen Isoelectronic Trap in the III V Semiconductor Alloys Gallium Arsenide Phosphide and Indium Gallium Phosphide written by and published by . This book was released on 1972 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1979 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book BTL Talks and Papers written by Bell Telephone Laboratories, inc. Technical Information Libraries and published by . This book was released on 1971 with total page 1014 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Bell Laboratories Talks and Papers written by Bell Telephone Laboratories, inc. Libraries and Information Systems Center and published by . This book was released on 1970 with total page 992 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Comprehensive Dissertation Index written by and published by . This book was released on 1984 with total page 912 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dilute Nitride Semiconductors written by Mohamed Henini and published by Elsevier. This book was released on 2004-12-15 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community
Download or read book Nitrogen Isoelectronic Traps in Gallium Arsenide Phosphide and Aluminum Gallium Arsenide written by Donald James Wolford (Jr) and published by . This book was released on 1979 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: The results presented here form the basis for reinterpreting N-trap luminescence in GaAs sub 1-x P sub x and Al sub x Ga sub 1-x As. Previously the luminescence of these centers in ternary alloys was attributed to NN pairs. For the isolated N center, only one bound state was identified, and that corresponded to the A-line in GaP (or AlAs). On the basis of the new data, it is now clear that dominant emission (termed N sub x) is due not to NN pairs but to isolated N and previously ignored phonon coupling. Furthermore, in GaAs sub 1-x P sub 1-x it is found an additional shallow bound state associated largely with the gamma sub 1 band minimum.
Download or read book Nitrogen Isoelectronic Traps in Gallium Arsenide Phosphide and Aluminum Gallium Arsenide written by Donald James Wolford and published by . This book was released on 1979 with total page 786 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1973 with total page 1064 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dopants and Defects in Semiconductors written by Matthew D. McCluskey and published by CRC Press. This book was released on 2012-02-23 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts.The authors first present introductory concepts, including basic semiconductor theory, defect classif
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1989 with total page 1316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Tunneling in the III V Semiconductor Alloys Indium Gallium Phosphide Gallium Aluminum Arsenide and Gallium Arsenide Phosphide written by Harold Wilfred Korb and published by . This book was released on 1971 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book INIS Atomindex written by and published by . This book was released on 1978 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ceramic Abstracts written by and published by . This book was released on 2000 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dielectric Properties of Indium Gallium Arsenide indium Phosphide Multiple Quantum Wells Films and Waveguides written by Albert Leroy Kellner and published by . This book was released on 1991 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:
