Download or read book Semiconductor Alloys written by An-Ben Chen and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the first comprehensive treatment of these technologically important materials, the authors provide theories linking the properties of semiconductor alloys to their constituent compounds. Topics include crystal structures, bonding, elastic properties, phase diagrams, band structures, transport, ab-initio theories, and semi-empirical theories. Each chapter includes extensive tables and figures as well as problem sets.
Download or read book Properties of Semiconductor Alloys written by Sadao Adachi and published by John Wiley & Sons. This book was released on 2009-03-12 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III−V and II−VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III−N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II−VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys.
Download or read book Spontaneous Ordering in Semiconductor Alloys written by Angelo Mascarenhas and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 483 pages. Available in PDF, EPUB and Kindle. Book excerpt: The phenomenonofspontaneous ordering in semiconductoralloys, which can be categorized as a self-organized process, is observed to occur sponta neously during epitaxial growth of certain ternary alloy semiconductors and results in a modification of their structural, electronic, and optical properties. There has been a great dealofinterest in learning how to control this phenome non so that it may be used for tailoring desirable electronic and optical properties. There has been even greater interest in exploiting the phenomenon for its unique ability in providing an experimental environment of controlled alloy statistical fluctuations. As such, itimpacts areasofsemiconductorscience and technology related to the materials science ofepitaxial growth, statistical mechanics, and electronic structure of alloys and electronic and photonic devices. During the past two decades, significant progress has been made toward understanding the mechanisms that drive this phenomenon and the changes in physical properties that result from it. A variety of experimental techniques have been used to probe the phenomenon and several attempts made atproviding theoretical models both for the ordering mechanisms as well as electronic structure changes. The various chapters of this book provide a detailed account of these efforts during the past decade. The first chapter provides an elaborate account of the phenomenon, with an excellent perspective of the structural and elec tronic modifications itinduces.
Download or read book Ternary Alloys Based on III V Semiconductors written by Vasyl Tomashyk and published by CRC Press. This book was released on 2017-09-29 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-V semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic devices as light-emitting diodes and solar cells. Because of their wide applications in a variety of devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. This new book covers all known information about phase relations in ternary systems based on III-V semiconductors. This book will be of interest to undergraduate and graduate students studying materials science, solid state chemistry, and engineering. It will also be relevant for researchers at industrial and national laboratories, in addition to phase diagram researchers, inorganic chemists, and solid state physicists.
Download or read book Properties of Aluminium Gallium Arsenide written by Sadao Adachi and published by IET. This book was released on 1993 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
Download or read book Silicon Germanium Carbon Alloys written by S. Pantellides and published by CRC Press. This book was released on 2002-07-26 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
Download or read book Electronic Properties of Materials written by Rolf E. Hummel and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 323 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present book on electrical, optical, magnetic and thermal properties of materials is in many aspects different from other introductory texts in solid state physics. First of all, this book is written for engineers, particularly materials and electrical engineers who want to gain a fundamental under standing of semiconductor devices, magnetic materials, lasers, alloys, etc. Second, it stresses concepts rather than mathematical formalism, which should make the presentation relatively easy to understand. Thus, this book provides a thorough preparation for advanced texts, monographs, or special ized journal articles. Third, this book is not an encyclopedia. The selection oftopics is restricted to material which is considered to be essential and which can be covered in a 15-week semester course. For those professors who want to teach a two-semester course, supplemental topics can be found which deepen the understanding. (These sections are marked by an asterisk [*]. ) Fourth, the present text leaves the teaching of crystallography, X-ray diffrac tion, diffusion, lattice defects, etc. , to those courses which specialize in these subjects. As a rule, engineering students learn this material at the beginning of their upper division curriculum. The reader is, however, reminded of some of these topics whenever the need arises. Fifth, this book is distinctly divided into five self-contained parts which may be read independently.
Download or read book Properties of Group IV III V and II VI Semiconductors written by Sadao Adachi and published by John Wiley & Sons. This book was released on 2005-06-14 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt: Almost all the semiconductors of practical interest are the group-IV, III-V and II-VI semiconductors and the range of technical applications of such semiconductors is extremely wide. The purpose of this book is twofold: * to discuss the key properties of the group-IV, III-V and II-VI semiconductors * to systemize these properties from a solid-state physics aspect The majority of the text is devoted to the description of the lattice structural, thermal, elastic, lattice dynamic, electronic energy-band structural, optical and carrier transport properties of these semiconductors. Some corrective effects and related properties, such as piezoelectric, elastooptic and electrooptic properties, are also discussed. The book contains convenient tables summarizing the various material parameters and the definitions of important semiconductor properties. In addition, graphs are included in order to make the information more quantitative and intuitive. The book is intended not only for semiconductor device engineers, but also physicists and physical chemists, and particularly students specializing in the fields of semiconductor synthesis, crystal growth, semiconductor device physics and technology.
Download or read book Structural Properties of Bismuth bearing Semiconductor Alloys written by Martha A. Berding and published by . This book was released on 1986 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Statistical Thermodynamics of Semiconductor Alloys written by Vyacheslav A Elyukhin and published by Elsevier. This book was released on 2015-10-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Statistical Thermodynamics of Semiconductor Alloys is the consideration of thermodynamic properties and characteristics of crystalline semiconductor alloys by the methods of statistical thermodynamics. The topics presented in this book make it possible to solve such problems as calculation of a miscibility gap, a spinodal decomposition range, a short-range order, deformations of crystal structure, and description of the order-disorder transitions. Semiconductor alloys, including doped elemental semiconductors are the basic materials of solid-state electronics. Their structural stability and other characteristics are key to determining the reliability and lifetime of devices, making the investigation of stability conditions an important part of semiconductor physics, materials science, and engineering. This book is a guide to predicting and studying the thermodynamic properties and characteristics of the basic materials of solid-state electronics. Includes a complete and detailed consideration of the cluster variation method (CVM) Provides descriptions of spinodal decomposition ranges of crystalline alloys Presents a representation of thermodynamics characteristics and properties as a miscibility gap by using the different approximations of CVM Covers a unique, detailed consideration of the valence force field model with the complete collection of formulas
Download or read book Mechanical Properties of Some III V and II Vi Semiconductor Alloys written by Rangaswamy Navamathavan and published by LAP Lambert Academic Publishing. This book was released on 2011-12 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors, the major area of research in materials science, have offered solutions to several important technological problems and provided many devices for day to day applications. Development in novel semiconductor materials such as heterostructure systems and the ever-diminishing size of devices are producing an explosion of interest and activity in the field of semiconductor materials and devices. The characterization of epitaxial layers and their surfaces have benefited a lot from the enormous progress of micro and nanomechanical analysis techniques. In particular, the dramatic improvement of the structural quality of semiconductor materials results from the level of sophistication achieved with such analysis techniques. First of all, micromechanical technique is nondestructive and its sensitivity has been improved to such an extent that nowadays the epilayer analysis can be performed on layers with thicknesses ranging on the atomic scale. Thus, this book addresses some of the collective works on III-V semiconductors which could be to be extremely important from a technological point of view, i.e., for the surveillance of modern semiconductor processes.
Download or read book Optical Constants of Crystalline and Amorphous Semiconductors written by Sadao Adachi and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 725 pages. Available in PDF, EPUB and Kindle. Book excerpt: Knowledge of the refractive indices and absorption coefficients of semiconductors is especially import in the design and analysis of optical and optoelectronic devices. The determination of the optical constants of semiconductors at energies beyond the fundamental absorption edge is also known to be a powerful way of studying the electronic energy-band structures of the semiconductors. The purpose of this book is to give tabulated values and graphical information on the optical constants of the most popular semiconductors over the entire spectral range. This book presents data on the optical constants of crystalline and amorphous semiconductors. A complete set of the optical constants are presented in this book. They are: the complex dielectric constant (E=e.+ieJ, complex refractive index (n*=n+ik), absorption coefficient (a.), and normal-incidence reflectivity (R). The semiconductor materials considered in this book are the group-IV elemental and binary, llI-V, IT-VI, IV-VI binary semiconductors, and their alloys. The reader will fmd the companion book "Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles" useful since it emphasizes the basic material properties and fundamental prinCiples.
Download or read book Physical Properties of III V Semiconductor Compounds written by Sadao Adachi and published by John Wiley & Sons. This book was released on 1992-11-10 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
Download or read book Indium Nitride and Related Alloys written by Timothy David Veal and published by CRC Press. This book was released on 2011-06-03 with total page 707 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.
Download or read book The Materials Science of Semiconductors written by Angus Rockett and published by Springer Science & Business Media. This book was released on 2007-11-20 with total page 629 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes semiconductors from a materials science perspective rather than from condensed matter physics or electrical engineering viewpoints. It includes discussion of current approaches to organic materials for electronic devices. It further describes the fundamental aspects of thin film nucleation and growth, and the most common physical and chemical vapor deposition techniques. Examples of the application of the concepts in each chapter to specific problems or situations are included, along with recommended readings and homework problems.
Download or read book Electronic Properties of Semiconductor Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2004-01-14 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface–induced gap states (IFIGS) as the unifying concept, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Download or read book The Physics of Semiconductors written by Marius Grundmann and published by Springer Nature. This book was released on 2021-03-06 with total page 905 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 4th edition of this highly successful textbook features copious material for a complete upper-level undergraduate or graduate course, guiding readers to the point where they can choose a specialized topic and begin supervised research. The textbook provides an integrated approach beginning from the essential principles of solid-state and semiconductor physics to their use in various classic and modern semiconductor devices for applications in electronics and photonics. The text highlights many practical aspects of semiconductors: alloys, strain, heterostructures, nanostructures, amorphous semiconductors, and noise, which are essential aspects of modern semiconductor research but often omitted in other textbooks. This textbook also covers advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, and transparent conductive oxides. The 4th edition includes many updates and chapters on 2D materials and aspects of topology. The text derives explicit formulas for many results to facilitate a better understanding of the topics. Having evolved from a highly regarded two-semester course on the topic, The Physics of Semiconductors requires little or no prior knowledge of solid-state physics. More than 2100 references guide the reader to historic and current literature including original papers, review articles and topical books, providing a go-to point of reference for experienced researchers as well.
