Download or read book Polycrystalline Silicon Thin Films by Metal induced Growth written by Elena A. Guliants and published by . This book was released on 2000 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metal induced Growth of Microcrystalline Silicon Thin Films for Solar Cells written by and published by . This book was released on 2005 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research focused on the process study for deposition of device quality polycrystalline silicon (poly-Si) thin films and solar cell fabrication by using a novel technique, metal-induced growth (MIG). Cobalt (Co) is introduced in the studies as a seed layer metal for the first time, while nickel (Ni) was another candidate. To grow the poly-Si, Co or Ni seed-layers were deposited on the foreign substrates by thermal evaporation with a few nm to 50 nm thickness. Substrates were transferred into the sputtering system for Si sputtering at elevated temperature from 525°C to 625°C. The Co or Ni reacted with sputtered Si to form metal disilicides which have very small lattice mismatch with Si (0.4% lattice mismatch for NiSi2 and Si, 1.2% lattice mismatch for CoSi2 and Si). The crystalline metal disilicides provide nucleation sites for poly-Si growth. With metal-induced growth, the relatively large-grain poly-Si films can be produced at relatively low temperatures on the various foreign substrates. Compared with Ni induced Si films, Co induced poly-Si has longer minority lifetime of 0.46 [mu]s as deposited and 1.3 [mu]s after annealing. A two-step sputtering method used for film deposition showed superiority over single step sputtering by achieving Si films with larger grain size (over 1 [mu]m) and less contamination. A double seed layer (5nm Co/50nm Ni) method was developed to produce the Si film with less Ni diffusion into Si. Metal-induced Si films were deposited on flexible thin tungsten substrates for solar cell fabrication. The good back Ohmic contact (metal disilicide) was formed naturally when the Si film was deposited. In this work, the solar cells were fabricated successfully by using metal-induced grown poly-Si. With the fabricated Schottky and P/N junction solar cells, the metal-induced growth processing parameters were studied. It was found that low-pressure sputtering, oxygen control during film growth, post-annealing and Si film hydrogenation are important to produce high quality poly-Si with fewer defects. The Schottky solar cell with optimized processing parameters showed the J[sub]sc and V[sub]oc of 12 mA/cm2 and 0.2 V, respectively. By passivating the MIG [mu]c-Si surface with hydrogenated nanocrystalline Si (nc-Si:H), the V[sub]oc was improved to 0.31 V. In addition, the current transport mechanism in Schottky and P/N junction devices were studied for different film growth conditions. The results showed that two-step sputtering, oxygen control and hydrogenation improved the quality of the Si film and devices.

Download or read book Metal Silicide Nanowires for Nanoscale Contacts and Polycrystalline Silicon Thin Films for Solar Cells by Metal induced Growth written by and published by . This book was released on 2006 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metal Induced Growth of Si Thin Films and NiSi Nanowires written by and published by . This book was released on 2010 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin film silicon has many useful purposes. Among the applications are solar cells and thin film transistors. This project involves a new and potentially lower cost method to produce thin silicon films. The method is called metal induced growth (MIG). A thin catalyst metal layer deposited on a foreign low cost substrate serves as the basis for growth of a nanocrystalline silicon thin film with thickness of 5-10 microns and preferred orientation of (220). The silicon deposition by magnetron sputtering on the heated substrate resulted in columnar structured grains having a diameter up to about 0.5 microns. Schottky barrier solar cells fabricated on these films gave a photocurrent of about 5 mA/sq cm and open circuit voltage of 0.25 volts. A modified process gave NiSi crystalline nanowires with length up to 10 microns and diameter of about 50 nm.

Download or read book Thin Film Transistors Polycrystalline silicon thin film transistors written by Yue Kuo and published by Springer Science & Business Media. This book was released on 2004 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.

Download or read book Metal Induced Crystallization written by Zumin Wang and published by CRC Press. This book was released on 2015-01-28 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystalline semiconductors in the form of thin films are crucial materials for many modern, advanced technologies in fields such as microelectronics, optoelectronics, display technology, and photovoltaic technology. Crystalline semiconductors can be produced at surprisingly low temperatures (as low as 120C) by crystallization of amorphous semicon

Download or read book Handbook of Photovoltaic Silicon written by Deren Yang and published by Springer. This book was released on 2019-11-28 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..

Download or read book Metal Induced Crystallization written by Zumin Wang and published by Pan Stanford. This book was released on 2015-01-28 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystalline semiconductors in the form of thin films are crucial materials for many modern, advanced technologies in fields such as microelectronics, optoelectronics, display technology, and photovoltaic technology. Crystalline semiconductors can be produced at surprisingly low temperatures (as low as 120 ̊C) by crystallization of amorphous semiconductors, which are put in contact with a metal. This so-called metal-induced crystallization process has attracted great scientific and technological interest because it allows the production of crystalline semiconductor-based advanced devices at very low temperatures, for example, directly on low-cost (but often heat-sensitive) substrates. This book provides the first comprehensive and in-depth overview of the current fundamental understanding of the metal-induced crystallization process and further elucidates how to employ this process in different technologies, for example, in thin-film solar cells and display technologies. It aims to give the reader a comprehensive perspective of the metal-induced crystallization process and thereby stimulate the development of novel crystalline semiconductor-based technologies.

Download or read book Crystallization of Amorphous Silicon Thin Films Induced by Nanoparticle Seeds written by Taekon Kim and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: Crystallization of amorphous Si (a-Si) thin film has received extensive interest for their attractive applications into Si thin film transistors and Si based solar cells. Among various crystallization techniques, Solid phase crystallization (SPC) and Excimer laser crystallization (ELC) were investigated. Firstly, Solid phase crystallization (SPC) of amorphous silicon thin films deposited by the DC magnetron sputtering system with a modification in nucleation step was investigated at low temperature. The thin film consists of polycrystalline nanoparticles embedded in an amorphous matrix which can act as nuclei during crystallization, resulting in a lower thermal energy for the nucleation. The lowering energy barrier for nucleation would shorten the transition time from amorphous into polycrystalline silicon resulting from the reduction of incubation time and also lower the processing temperature spontaneously. In addition, a comprehensive study of the growth mechanism of the sputtered amorphous silicon thin films is presented during annealing. Samples were prepared with various substrate temperatures and RF power in order to optimize the crystallization of a-Si after the deposition. Also, the effects of annealing condition were examined. Low pressure N2 ambient during SPC promoted crystallization of a-Si thin films and the crystallinity. The low pressure annealing had a large impact on the crystallinity and growth behavior of subsequent films.

Download or read book Nucleation and Growth During the Formation of Polycrystalline Silicon Thin Films written by Jens Michael Schneider and published by . This book was released on 2006 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Polysilicon Films and Interfaces Volume 106 written by C. Y. Wong and published by Mrs Proceedings. This book was released on 1988-07-27 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Download or read book Preparation and Properties of Thin Films written by K. N. Tu and published by Elsevier. This book was released on 2013-10-22 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: Treatise on Materials Science and Technology, Volume 24: Preparation and Properties of Thin Films covers the progress made in the preparation of thin films and the corresponding study of their properties. The book discusses the preparation and property correlations in thin film; the variation of microstructure of thin films; and the molecular beam epitaxy of superlattices in thin film. The text also describes the epitaxial growth of silicon structures (thermal-, laser-, and electron-beam-induced); the characterization of grain boundaries in bicrystalline thin films; and the mechanical properties of thin films on substrates. The ion beam modification of thin film; the use of thin alloy films for metallization in microelectronic devices; and the fabrication and physical properties of ultrasmall structures are also encompassed. Materials scientists and materials engineers will find the book invaluable.

Download or read book Thin Films by Chemical Vapour Deposition written by C.E. Morosanu and published by Elsevier. This book was released on 2016-06-22 with total page 720 pages. Available in PDF, EPUB and Kindle. Book excerpt: The explosive growth in the semiconductor industry has caused a rapid evolution of thin film materials that lend themselves to the fabrication of state-of-the-art semiconductor devices. Early in the 1960s an old research technique named chemical vapour phase deposition (CVD), which has several unique advantages, developed into the most widely used technique for thin film preparation in electronics technology. In the last 25 years, tremendous advances have been made in the science and technology of thin films prepared by means of CVD. This book presents in a single volume, an up-to-date overview of the important field of CVD processes which has never been completely reviewed previously. Contents: Part I. 1. Evolution of CVD Films. Introductory remarks. Short history of CVD thin films. II. Fundamentals. 2. Techniques of Preparing Thin Films. Electrolytic deposition techniques. Vacuum deposition techniques. Plasma deposition techniques. Liquid-phase deposition techniques. Solid-phase deposition techniques. Chemical vapour conversion of substrate. Chemical vapour deposition. Comparison between CVD and other thin film deposition techniques. 3. Chemical Processes Used in CVD. Introduction. Description of chemical reactions used in CVD. 4. Thermodynamics of CVD. Feasibility of a CVD process. Techniques for equilibrium calculations in CVD systems. Examples of thermodynamic studies of CVD systems. 5. Kinetics of CVD. Steps and control type of a CVD heterogeneous reaction. Influence of experimental parameters on thin film deposition rate. Continuous measurement of the deposition rate. Experimental methods for studying CVD kinetics. Role of homogeneous reactions in CVD. Mechanism of CVD processes. Kinetics and mechanism of dopant incorporation. Transport phenomena in CVD. Status of kinetic and mechanism investigations in CVD systems. 6. Measurement of Thin Film Thickness. Mechanical methods. Mechanical-optical methods. Optical methods. Electrical methods. Miscellaneous methods. 7. Nucleation and Growth of CVD Films. Stages in the nucleation and growth mechanism. Regimes of nucleation and growth. Nucleation theory. Dependence of nucleation on deposition parameters. Heterogeneous nucleation and CVD film structural forms. Homogeneous nucleation. Experimental techniques. Experimental results of CVD film nucleation. 8. Thin Film Structure. Techniques for studying thin film structure. Structural defects in CVD thin films. 9. Analysis of CVD Films. Analysis techniques of thin film bulk. Analysis techniques of thin film surfaces. Film composition measurement. Depth concentration profiling. 10. Properties of CVD Films. Mechanical properties. Thermal properties. Optical properties. Photoelectric properties. Electrical properties. Magnetic properties. Chemical properties. Part III. 11. Equipment and Substrates. Equipment for CVD. Safety in CVD. Substrates. 12. Preparation and Properties of Semiconducting Thin Films. Homoepitaxial semiconducting films. Heteroepitaxial semiconducting films. 13. Preparation and Properties of Amorphous Insulating Thin Films. Oxides. Nitrides and Oxynitrides. Polymeric thin films. 14. Preparation and Properties of Conductive Thin Films. Metals and metal alloys. Resistor materials. Transparent conducting films. Miscellaneous materials. 15. Preparation and Properties of Superconducting and Magnetic Thin Films. Superconducting materials. Magnetic materials. 16. Uses of CVD Thin Films. Applications in electronics and microelectronics. Applications in the field of microwaves and optoelectronics. Miscellaneous applications. Artificial heterostructures (Quantum wells, superlattices, monolayers, two-dimensional electron gases). Part V. 17. Present and Future Importance of CVD Films.

Download or read book Investigation of Metal induced Crystallization of Silicon Thin Films and Silicon Based Nanostructures written by Kai Wang and published by . This book was released on 2012 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Technology Manufacturing and Grid Connection of Photovoltaic Solar Cells written by Guangyu Wang and published by John Wiley & Sons. This book was released on 2018-02-09 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: A unique guide to the most important technical aspects of photovoltaic power generation with comprehensive analysis and author industry-experience Unique from other books in the area in that it explains profound theories in simple language, introduces widely used production equipment and processes for industry professionals, and explains the complete PV industry chain from material to power generation Has originated from the author’s practical industry experience, enabling the use of up-to-date information during this time of new development in the Chinese PV industry Content includes approximately 255 illustrations and 46 tables to help clarify complex theories.

Download or read book Thin Film Transistor Technologies TFTT VII written by Yue Kuo and published by The Electrochemical Society. This book was released on 2005 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Crystal Growth written by Tom Kuech and published by Elsevier. This book was released on 2014-11-02 with total page 1384 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials