Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors
Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Electrical and Physiochemical Characterization written by and published by Academic Press. This book was released on 1997-05-23 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical and physico-chemical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Download or read book Ion Implantation and Beam Processing written by J. S. Williams and published by Academic Press. This book was released on 2014-06-28 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book Radiation Effects in Silicon Carbide written by A.A. Lebedev and published by Materials Research Forum LLC. This book was released on 2017 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.
Download or read book Silicon Carbide written by Chuan Feng Zhe and published by CRC Press. This book was released on 2003-10-30 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.
Download or read book Advances in Silicon Carbide Processing and Applications written by Stephen E. Saddow and published by Artech House. This book was released on 2004 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Download or read book III Nitride Semiconductor Optoelectronics written by and published by Academic Press. This book was released on 2017-01-05 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored. - Contains the latest breakthrough research in III-nitride optoelectronics - Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices - Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1975 with total page 764 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Nanowires I Growth and Theory written by and published by Academic Press. This book was released on 2015-11-26 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Nanowires: Part A, Number 93 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. - Contains comments from leading contributors in the field semiconductor nanowires - Provides reviews of the most important recent literature - Presents a broad view, including an examination of semiconductor nanowires - Comprises up to date advancements in the technological development of nanowire devices and systems, and is comprehensive enough to be used as a reference book on nanowires as well as a graduate student text book
Download or read book Semiconductor Nanowires II Properties and Applications written by and published by Academic Press. This book was released on 2016-01-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Nanowires: Part B, and Volume 94 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. - Includes experts contributors who review the most important recent literature - Contains a broad view, including examination of semiconductor nanowires
Download or read book 2D Materials written by and published by Academic Press. This book was released on 2016-06-24 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: 2D Materials contains the latest information on the current frontier of nanotechnology, the thinnest form of materials to ever occur in nature. A little over 10 years ago, this was a completely unknown area, not thought to exist. However, since then, graphene has been isolated and acclaimed, and a whole other class of atomically thin materials, dominated by surface effects and showing completely unexpected and extraordinary properties has been created. This book is ideal for a variety of readers, including those seeking a high-level overview or a very detailed and critical analysis. No nanotechnologist can currently overlook this new class of materials. - Presents one of the first detailed books on this subject of nanotechnology - Contains contributions from a great line-up of authoritative contributors that bring together theory and experiments - Ideal for a variety of readers, including those seeking a high-level overview or a very detailed and critical analysis
Download or read book Electrostatic Accelerators written by Ragnar Hellborg and published by Springer Science & Business Media. This book was released on 2005-11-02 with total page 630 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrostatic accelerators are an important and widespread subgroup within the broad spectrum of modern, large particle acceleration devices. They are specifically designed for applications that require high-quality ion beams in terms of energy stability and emittance at comparatively low energies (a few MeV). Their ability to accelerate virtually any kind of ion over a continuously tunable range of energies makes them a highly versatile tool for investigations in many research fields including, but not limited to, atomic and nuclear spectroscopy, heavy ion reactions, accelerator mass spectroscopy as well as ion-beam analysis and modification. The book is divided into three parts. The first part concisely introduces the field of accelerator technology and techniques that emphasize their major modern applications. The second part treats the electrostatic accelerator per se: its construction and operational principles as well as its maintenance. The third part covers all relevant applications in which electrostatic accelerators are the preferred tool for accelerator-based investigations. Since some topics are common to all types of accelerators, Electrostatic Accelerators will also be of value for those more familiar with other types of accelerators.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Amorphous and Crystalline Silicon Carbide IV written by Cary Y. Yang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 439 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.
