Download or read book Ultra shallow Junction Fabrication Using Plasma Immersion Ion Implantation and Epitaxial CoSi2 as a Dopant Source written by Erin Catherine Jones and published by . This book was released on 1996 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Beam Processing of Materials and Deposition Processes of Protective Coatings written by P.L.F. Hemment and published by Newnes. This book was released on 2012-12-02 with total page 630 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing the proceedings of three symposia in the E-MRS series this book is divided into two parts. Part one is concerned with ion beam processing, a particularly powerful and versatile technology which can be used both to synthesise and modify materials, including metals, semiconductors, ceramics and dielectrics, with great precision and excellent control. Furthermore it also deals with the correlated effects in atomic and cluster ion bombardment and implantation.Part two deals with the deposition techniques, characterization and applications of advanced ceramic, metallic and polymeric coatings or thin films for surface protection against corrosion, erosion, abrasion, diffusion and for lubrication of contracting surfaces in relative motion.
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Download or read book Handbook of Emerging Materials for Semiconductor Industry written by Young Suh Song and published by Springer Nature. This book was released on with total page 930 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Devices written by Kenneth A. Jackson and published by John Wiley & Sons. This book was released on 2008-11-21 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon is the most important material for the electronics industry. In modern microelectronics silicon devices like diodes and transistors play a major role, and devices like photodetectors or solar cells gain ever more importance. This concise handbook deals with one of the most important topics for the electronics industry. World renowned authors have contributed to this unique overview of the processing of silicon and silicon devices.
Download or read book Principles of Plasma Discharges and Materials Processing written by Michael A. Lieberman and published by John Wiley & Sons. This book was released on 2024-08-28 with total page 837 pages. Available in PDF, EPUB and Kindle. Book excerpt: A new edition of this industry classic on the principles of plasma processing Plasma-based technology and materials processes have been central to the revolution of the last half-century in micro- and nano-electronics. From anisotropic plasma etching on microprocessors, memory, and analog chips, to plasma deposition for creating solar panels and flat-panel displays, plasma-based materials processes have reached huge areas of technology. As key technologies scale down in size from the nano- to the atomic level, further developments in plasma materials processing will only become more essential. Principles of Plasma Discharges and Materials Processing is the foundational introduction to the subject. It offers detailed information and procedures for designing plasma-based equipment and analyzing plasma-based processes, with an emphasis on the abiding fundamentals. Now fully updated to reflect the latest research and data, it promises to continue as an indispensable resource for graduate students and industry professionals in a myriad of technological fields. Readers of the third edition of Principles of Plasma Discharges and Materials Processing will also find: Extensive figures and tables to facilitate understanding A new chapter covering the recent development of processes involving high-pressure capacitive discharges New subsections on discharge and processing chemistry, physics, and diagnostics Principles of Plasma Discharges and Materials Processing is ideal for professionals and process engineers in the field of plasma-assisted materials processing with experience in the field of science or engineering. It is the premiere world-wide basic text for graduate courses in the field.
Download or read book Nanometer CMOS written by Juin J. Liou and published by CRC Press. This book was released on 2010-02-28 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.
Download or read book Advances in Rapid Thermal Processing written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 1999 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Technology written by Edmund G. Seebauer and published by American Institute of Physics. This book was released on 2008-12-11 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: The conference is focused on recent advances and emerging technologies in semiconductor processing before, during and after ion implantation. The content encompasses fundamental physical understanding, common and novel applications as well as equipment issues, maintenance and design. The primary audience is process engineers in the microelectronics industry. Additional contributions come from academia and other industry segments (automotive, aerospace, and medical device manufacturing).
Download or read book Frontiers In Electronics With Cd rom Proceedings Of The Wofe 04 written by Michael S Shur and published by World Scientific. This book was released on 2006-08-10 with total page 774 pages. Available in PDF, EPUB and Kindle. Book excerpt: Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues.This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies.
Download or read book Silicon Devices and Process Integration written by Badih El-Kareh and published by Springer Science & Business Media. This book was released on 2009-01-09 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author’s industrial and academic lecture notes and reflects years of experience in the development of silicon devices. Features include: A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon; State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS; CMOS-only applications, such as subthreshold current and parasitic latch-up; Advanced Enabling processes and process integration. This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.
Download or read book Surface Passivation and Junction Engineering in Silicon written by Gaurav Thareja and published by Stanford University. This book was released on 2011 with total page 99 pages. Available in PDF, EPUB and Kindle. Book excerpt: The planar silicon MOSFET is facing diminishing performance returns in improvement from device geometry scaling. Two alternative devices are being explored as possible solutions to this problem. The first contender is a multi-gate device (FINFET or surround gate) and the other is a MOSFET with high mobility channel material such as germanium, III-V or carbon. Ge has emerged as an important materials platform during recent years. With its high carrier mobility and the ability to detect and emit photons at telecommunications wavelengths, Ge is an attractive candidate for applications in both high performance electronics and optoelectronics. Moreover due to its compatibility with conventional CMOS fabrication, it can be processed using the standard manufacturing techniques that are currently used for silicon. However Ge does present a number of unique challenges that must be overcome, including issues of surface passivation, low n-type dopant solubility, and high dopant diffusivity. In this work, the unique properties of surface passivation enabled by radical oxidation are discussed. Some of the highlights are low temperature processing, substrate orientation independent growth rate of dielectric and low interface density. Subsequently, this radical oxidation is applied to 3D vertical gate all around (GAA) silicon MOSFET devices. Higher drive current, lower gate leakage and higher gate dielectric breakdown voltage are demonstrated for GAA devices using radical oxidation in comparison to thermal oxidation In the second part, radical oxidation is investigated for GeO2 growth as an interfacial layer in high-k / Ge gate stack. Using MOSCAP and n-MOSFET devices on Ge, low interface state density combined with drive current and electron mobility enhancement is demonstrated for Ge devices. In the third part, the source/drain junctions for Ge are studied. Ultra-shallow junctions using plasma immersion ion implantation are demonstrated. High n-type dopant activation in Ge using laser annealing is realized along with high performance diodes, significant reduction of contact resistance and integration in a MOSFET process flow.
Download or read book Ion Beams in Nanoscience and Technology written by Ragnar Hellborg and published by Springer Science & Business Media. This book was released on 2009-11-09 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt: Energetic ion beam irradiation is the basis of a wide plethora of powerful research- and fabrication-techniques for materials characterisation and processing on a nanometre scale. Materials with tailored optical, magnetic and electrical properties can be fabricated by synthesis of nanocrystals by ion implantation, focused ion beams can be used to machine away and deposit material on a scale of nanometres and the scattering of energetic ions is a unique and quantitative tool for process development in high speed electronics and 3-D nanostructures with extreme aspect radios for tissue engineering and nano-fluidics lab-on-a-chip may be machined using proton beams. This book will benefit practitioners, researchers and graduate students working in the field of ion beams and application and more generally everyone concerned with the broad field of nanoscience and technology.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hydrogen in Crystalline Semiconductors written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: vgl. Hardcoverausgabe.
Download or read book Ion Beams in Materials Processing and Analysis written by Bernd Schmidt and published by Springer Science & Business Media. This book was released on 2012-12-13 with total page 425 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.
Download or read book Silicon Technologies written by Annie Baudrant and published by John Wiley & Sons. This book was released on 2013-05-10 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.
