Download or read book Physics Based Analytical Model for Silicon Carbide Metal Semiconductor Field effect Transistors for Microwave Frequency Applications written by Bodhisattwa Samanta and published by . This book was released on 2013 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper, the author presents a physics based analytical modeling and simulation of ion implanted silicon carbide Schottky gate FET. The model has been developed to compute the drain-source current, intrinsic parameters such as, gate capacitances, drain-source resistance and transconductance taking into account of different fabrication parameters such as doping concentration of active channel, doping constant, mobility, the correlation between active channel depth and pinch off voltage and other physical parameters. The physics based analytical model for a non self-aligned SiC MESFET shows different intrinsic and extrinsic parameters reflecting the microwave frequency applications.
Download or read book Physics based Analytical Model for Silicon Carbide MESFET with a New Concept of Charge Conserving Capacitance written by Kiran Kumar Rambappagari and published by . This book was released on 2013 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this project, a physics-based analytical model for silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been developed and presented. The gate capacitances such as gate-source capacitance and gate-drain capacitance were determined by considering various terminal charges with respect to the voltages at source, drain, and gate. The gate capacitance has been determined for linear and non-linear regions. This study is extremely valuable for SiC MESFETs to find their cut-off and maximum frequencies from the gate capacitance model. The gate-source and gate-drain capacitances show extremely attractive values, justifying the use of SiC MESFET as a high frequency device.
Download or read book Analytical Modeling of 4H silicon Carbide Based MESFET with Trapping Effects written by Chirayu Shah and published by . This book was released on 2017 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt: 4H-Silicon Carbide metal semiconductor effect transistor has a massive possible popular high-power device at microwave frequencies because of their extensive band-gap structures of high electrical breakdown field strength, high electron saturation velocity and high operational temperature. A physics-based analytical model of Silicon Carbide based MESFETs has been developed considering high-purity semi-insulating substrates to find the interaction of traps influence between the channel and substrates. I-V characteristics with the influence of traps and without traps, I-V characteristics with field dependent mobility and the transconductance with traps and without traps have been evaluated to understand the power aided efficiency and frequency performance.
Download or read book Development of Silicon Carbide Metal semiconductor Field effect Transistors for Microwave Power Applications written by Ho-Young Cha and published by . This book was released on 2004 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced Field Effect Transistors written by Dharmendra Singh Yadav and published by CRC Press. This book was released on 2023-12-18 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: • Design and challenges in tunneling FETs • Various modeling approaches for FETs • Study of organic thin-film transistors • Biosensing applications of FETs • Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Download or read book Microwave Field Effect Transistors written by Raymond S. Pengelly and published by IET. This book was released on 1994-06-30 with total page 705 pages. Available in PDF, EPUB and Kindle. Book excerpt: The following topics are dealt with: GaAs FET theory-small signal; GaAs FET theory-power; requirements and fabrication of GaAs FETs; design of transistor amplifiers; FET mixers; GaAs FET oscillators; FET and IC packaging; FET circuits; gallium arsenide integrated circuits; and other III-V materials and devices
Download or read book Physics Based Analytical Model of Silicon Carbide MESFET with Effective Drift Velocity and Mobility written by Rishitej Reddy Byravarapu and published by . This book was released on 2015 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt: An analytical model of silicon carbide based MESFET has been developed to evaluate the frequency response from an intensive study of the I-V characteristics and intrinsic parameters. The I-V characteristics have been determined by the channel charge in the linear and non-linear regimes. The transconductance has been computed in the saturation region to determine its properties contributing to the cut-off frequency response. The gate-source capacitance and gate-drain capacitance under saturation condition have been calculated in the frame of this model. The cut off frequency has been evaluated by using the transconductance and gate capacitance and the anticipated cut-off frequency is expected to obtain in the order of GHz range due the properties of wide bandgap semiconductor.
Download or read book Silicon Carbide SiC Based MESFET Similation for High Power and High Frequency Performance Using MATLAB written by Bhavik Patel and published by . This book was released on 2015 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this project, the explanation of analytical modeling of ion implanted silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been described. This model has been designed to determine the drain-source current, threshold voltage, intrinsic parameters such as gate capacitance, transconductance and, drain-source resistance bearing in mind different fabrication parameters such as annealing, ion energy, ion dose, and ion range. The model helps in getting the ion implantation fabrication parameters using the optimization of the effective implanted channel thickness for different ion doses arising to the preferred pitch off voltage for high breakdown voltage and high drain current. A study on gate-to-drain and gate-to-source capacitance, drain-source resistance and transconductance was done to determine the device frequency response.
Download or read book A Three Region Analytical Model for Short Channel Silicon Carbide SiC MESFET s written by Rahul Reddy Kambalapally and published by . This book was released on 2013 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project presents an improved analytical model of the three regions in a SiC metal semiconductor field effect transistor(MESFET). The analytical model mainly focuses on two regions in the active channel that are between gate-source and drain-source. The third region gate-drain (which is ungated) is ignored in this analytical model due to the very large potential drop at high drain voltages in a short channel device. In order to improve the accuracy in this model, the parasitic resistance and incomplete ionization of dopants have been incorporated. Considering these effects in the analytical model, a simulation of the current and voltage characteristics and transfer characteristics of the Silicon Carbide MESFET has been developed and discussed in detailed in this thesis.
Download or read book Negative Capacitance Field Effect Transistors written by Young Suh Song and published by CRC Press. This book was released on 2023-10-31 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book Junctionless Field Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-02-27 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Download or read book Microwave Nonlinear Modeling and Active Frequency Multiplier Design for High Power Silicon carbide and Gallium nitride Field effect Transistors written by Kelvin Shing-Tak Yuk and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap silicon-carbide (SiC) and gallium-nitride (GaN) FETs are the premier microwave solid-state power technology and are presently being deployed in a variety of commercial applications. However, performance-degrading self-heating and charge-trapping effects create new challenges for characterization and modeling of these devices. Accurate nonlinear models capable of predicting these effects are necessary to maximally exploit the benefits of this emerging, high power density technology. An empirical modeling methodology for the SiC MESFET and GaN HEMT using high power dynamic IV measurements to exploit and characterize self-heating and charge-trapping is applied over a vast range of electrothermal operating conditions. Nonlinear diode modeling and multibias, small-signal techniques are performed to create complete nonlinear models for SiC and GaN FETs, which are capable of predicting DC, pulsed, small- and large-signal RF behavior over a wide range of bias and frequency. The presented models are valid for drain currents beyond 2A, drain voltages greater than 50V and up to 10W at RF. These harmonically-accurate models permit the new application of CAD-based active frequency multiplier design for wide bandgap devices. Frequency doublers and triplers are demonstrated in SiC MESFET and GaN HEMT technology, producing some of the highest power, single-transistor microwave frequency multipliers to date. This work reports SiC- and GaN-based C-band frequency doublers with>5W output power and a GaN-based X-band frequency tripler with 1W output power.
Download or read book Silicon Carbide Based Metal Semiconductor Field Effect Transistor Variable capacitance Model for Realizing Monolithic Microwave Integrated Circuit Voltage controlled Function written by Sitarama Raju Gottumukkala and published by . This book was released on 2013 with total page 41 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project presents a development of variance capacitance model for a silicon carbide metal semiconductor field effect transistor (MESFET), three-terminal varactor, applied to a monolithic microwave integrated circuit (MMIC), voltage-controlled oscillator. In this model, because the source is connected with the drain, the gate capacitance is only considered by analytical expressions, which are classified into three different regions for gate bias voltage: a before pinch-off region, an after-pinch-off region, and a transition region. The model includes consideration for free carrier movement in the active region, which is a critical contributor to the gate capacitance.
Download or read book Simulation and Modeling of Emerging Devices written by Brinda Bhowmick and published by Cambridge Scholars Publishing. This book was released on 2023-05-10 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the physical principles, modelling, fabrication and applications of Tunnel Field Effect Transistors (TFETs) and Fin Field Effect Transistors (FinFETs). This is intended to act as a reference for undergraduate, postgraduate and research scholars belonging to backgrounds of Applied Physics, Electrical and Electronics Engineering and Material Science. Of paramount importance is the need to understand the simulation aspects of these devices, the validity of mathematical models, basics on fabrication and details of applications of these nanoscale devices. The presentation of the book assumes that the reader has fundamental concepts of semiconductor device physics and electronic circuits. A course such as the one this book is intended to accompany and motivate both students and scholars to get involved in the research on TFETs and FinFETs. Further, this book can act as a reference for device engineers and scientists who need to get updated information on device and technological developments.
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 998 pages. Available in PDF, EPUB and Kindle. Book excerpt:
