Download or read book Physics and Applications of Dilute Nitrides written by I. Buyanova and published by CRC Press. This book was released on 2004-08-30 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since their development in the 1990s, it has been discovered that diluted nitrides have intriguing properties that are not only distinct from those of conventional semiconductor materials, but also are conducive to various applications in optoelectronics and photonics. The book examines these applications and presents a broad and in-depth look at t
Download or read book Dilute III V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer Science & Business Media. This book was released on 2008-01-12 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Download or read book Dilute III V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer. This book was released on 2009-09-02 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Download or read book Nitrides and Dilute Nitrides written by Javier Miguel-Sánchez and published by . This book was released on 2007-01-01 with total page 405 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the early developments of the last century, a lot of investigations and works have been devoted to the study of the science and technology of semiconductors. Although silicon and germanium were the pioneering semiconductors, in the last years, the so called III-V semiconductors [(B,Al,Ga,In)(P,As,Sb)] attracted a lot of attention for their interesting properties (high mobility, direct transitions, ...) which yielded to the successful development of high speed electronic devices and light emitting and laser diodes. Current telecom applications are mainly based in these semiconductor devices (mobile phones, VCSELs in fibre optic applications, etc.). But in the last decades, the incorporation of the small and highly electronegative nitrogen atom in the 'old' III-V semiconductors has opened a new and interesting field in semiconductor physics and applications: Nitrides (III-N) and dilute nitrides (III-V-N) are nowadays the main candidates for the development of devices with improved characteristics: laser diodes in the wavelengths of interest for telecom applications, in the visible and UV range, high electron mobility transistors, white LED for automotive, home and airplane illumination with much lower heat dissipation than bulb-based illumination, high temperature applications, ... This book is devoted to a detailed compilation of comprehensive reviews of the main topics under investigation in the field of nitride and dilute nitrides, written by the pioneers and researchers from the leading research labs from all over the world, describing the properties of these semiconductors: From the ab initio theory to the growth (MOCVD, MBE) and characterization (magnetic, electric, structural) of the materials and the devices.
Download or read book Hydrogenated Dilute Nitride Semiconductors written by Gianluca Ciatto and published by CRC Press. This book was released on 2015-04-01 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: The nonlinear behavior of nitrogen and the passivation effect of hydrogen in dilute nitrides open the way to the manufacture of a new class of nanostructured devices with in-plane variation of the optical band gap. This book addresses the modifications of the electronic structure and of the optical and structural properties induced in these technol
Download or read book Dilute Nitride Semiconductors written by Mohamed Henini and published by Elsevier. This book was released on 2004-12-15 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community
Download or read book Understanding the Growth of Dilute Nitrides from First Principles written by Hazem Abu Farsakh and published by Sudwestdeutscher Verlag Fur Hochschulschriften AG. This book was released on 2010-12 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to the large band-gap bowing associated with low N contents in III-V semiconductors, ternary and quaternary dilute nitride alloys have sparked interest over the last years for a wide range of technological applications. However, the realization of these alloys has been hampered by several challenges such as the extremely low equilibrium solubility of N and composition fluctuations. In order to overcome these challenges a detailed understanding of the growth of these alloys at the atomic level is crucial. Therefore, by employing state-of-the art first-principles calculations, this work provides (i) a detailed study of the thermodynamic N solubility limits at technologically relevant GaAs and InAs surfaces/subsurfaces as function of growth conditions, and (ii) the kinetic mechanisms for N adatoms that affect and control their incorporation, such as adatom diffusion and surface/subsurface substitution. A detailed analysis of the interplay between thermodynamics and kinetics allowed to predict the optimum conditions for N incorporation and to explain experimental results. This study provides a prototype for understanding the growth highly mismatched multi-component alloys.
Download or read book Physics Chemistry and Application of Nanostructures written by Viktor Evgen?evich Borisenko and published by World Scientific. This book was released on 2009 with total page 669 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents invited reviews and original short notes with recent results obtained in fabrication study and application of nanostructures, which are promising for new generations of electronic and optoelectronic devices. Recent developments in nanotechnology, nanoelectronics, spintronics, nanophotonics, nanosensorics and nanobiology are presented.
Download or read book Physics Chemistry And Application Of Nanostructures Reviews And Short Notes Proceedings Of The International Conference On Nanomeeting 2009 written by Victor E Borisenko and published by World Scientific. This book was released on 2009-04-24 with total page 669 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents invited reviews and original short notes with recent results obtained in fabrication study and application of nanostructures, which are promising for new generations of electronic and optoelectronic devices.Recent developments in nanotechnology, nanoelectronics, spintronics, nanophotonics, nanosensorics and nanobiology are presented.
Download or read book Compound Semiconductor Photonics written by Chua Soo-Jin and published by CRC Press. This book was released on 2020-03-26 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt: This proceeding is a collection of selected papers presented at Symposium O of Compound Semiconductor Photonics in the International Conference on Materials for Advanced Technology (ICMAT), which was held in Singapore from 28 June to 3 July 2009. The symposium covers a wide range of topics from fundamental semiconductor materials study to photonic device fabrication and application. The papers collected are of recent progress in the active and wide range of semiconductor photonics research. They include materials-related papers on III-As/P, III-nitride, quantum dot/wire/dash growth, ZnO, and chalcogenide, and devices-related papers on photonic crystals, VCSEL, quantum dot/dash lasers, LEDs, waveguides, solar cells and heterogeneous integrat
Download or read book Structure and Properties of Dilute Nitride GaAsN Alloy Films written by Matthew J. Reason and published by . This book was released on 2006 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Nitride Semiconductors and Devices Materials Properties Physics and Growth written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 1311 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.
Download or read book Theoretical Study of Local Defect Structures in Dilute Nitride Semiconductors written by John Anthony Buckeridge and published by . This book was released on 2010 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: The focus of this work is an investigation of the local structure of nitrogen-related defects in the dilute nitride semiconductor, GaNxAs1-x. Dilute nitride alloys have attracted considerable attention in recent years. When a small fraction of the As atoms in GaAs or InGaAs are replaced by N, the energy gap of the material decreases rapidly; for example by 150 meV when the N concentration is 1%, making it a promising material for long wavelength (1.3 and 1.55æm) telecommunications lasers based on a GaAs substrate and for extending the wavelength range of GaAs-based solar cells further into the infrared. However, the addition of these small concentrations of nitrogen to GaAs has also been found to cause a drastic reduction in n-type carrier mobility, to such a degree as to render the materials unacceptable for many applications at present. The reductions in band gap and carrier mobility are attributed to an interaction between the GaAs conduction band, and a set of localized or quasi-localized defect states associated with the substitution of N on As sites at random throughout the alloy. The drastically low mobility in particular is attributed to the interaction with localized defect states associated with clusters of N atoms sharing Ga nearest-neighbours, with energies very close to the conduction band edge. We calculate methods of probing defects associated with substitutional N in GaAs. In particular we present results of first-principles density functional theory calculations on the localized vibrational mode (LVM) spectrum of the Si-N defect in GaAs, and the effects of strain on the isolated nitrogen LVM. A gated, double-quantum-well InGaAs/GaNxAs1-x heterostructure device, in which the interaction between conduction band carriers and states associated with clusters of nitrogen atoms, forming at random throughout the alloy, can be tuned by varying the gating electric fields, is described. The mobility as a function of gate field is calculated, with reductions in mobility occurring when the Fermi level is resonant with the energies of the N cluster states, providing a possible experimental method of probing these states, which lie near the GaAs conduction band edge and are considered to be the primary mobility-limiting factor in the dilute nitrides.
Download or read book Physics of Semiconductor Devices written by K. N. Bhat and published by Alpha Science Int'l Ltd.. This book was released on 2004 with total page 1310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contributed papers of the workshop held at IIT, Madras, in 2003.
Download or read book Novel Compound Semiconductor Nanowires written by Fumitaro Ishikawa and published by CRC Press. This book was released on 2017-10-17 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.
Download or read book Solar Cells written by Arturo Morales-Acevedo and published by BoD – Books on Demand. This book was released on 2013-03-06 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the last decade, photovoltaic (PV) technology has shown the potential to become a major source of power generation for the world - with robust and continuous growth even during times of financial and economic crisis. That growth is expected to continue in the years ahead as worldwide awareness of the advantages of PV increases. However, cost remains as the greatest barrier to further expansion of PV-generated power, and therefore cost reduction is the prime goal of the PV and solar cell investigation. This book intends to contribute to such a purpose by covering a wide range of modern research topics in the solar cell physics and technology fields. The already established -1st generation- silicon solar cell technology, the 2nd generation thin film and the 3rd generation dye sensitized solar cells, including new technologies with very high perspectives for reducing the cost of solar electricity such as CZTS, organic polymer and tandem solar cells based on III-V compounds -under concentrated sunlight- are studied in this book by experts in the field from around the world. At the end, two chapters are also dedicated to the systems engineering, providing a complete PV energy research and application perspectives panorama
Download or read book Handbook of Nitride Semiconductors and Devices written by Hadis Morkoç and published by . This book was released on 2009-01 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with a clarity and depth not found elsewhere. The handbooks present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. They also deal with the properties and processes for thermal, optical (3-, 2-, 1-, 0-dimensional systems), electrical (at low- and high-electric fields, low- and high-magnetic fields for 3- and 2-dimensional systems), magnetism and magnetic properties (in dilute magnetic ion doped compounds) and spin-based device concepts. The associated measurement methods for each material deposition are discussed. The present volume 3 deals with nitride semiconductor devices and device technology. Among the applications areas that feature prominently are LEDs, lasers (including recording), FETs and HBTs (including novel treatment of fundamentals and hot phonon processes affecting the velocity), detectors and unique issues surrounding solar blind detection. This comprehensive handbook provides all interested researchers and engineers with an accessible treatment of this important class of materials.
