Download or read book Photoluminescence Study of Thermal Conversion in Gallium Arsenide written by John M. Anderson (1LT, USAF.) and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Study of Thermal Conversion in Gallium Arsenide written by John McLemore Anderson and published by . This book was released on 1980 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt: A photoluminescence study was made of undoped and chromium-doped gallium arsenide annealed in three different atmospheres: argon, hydrogen, and nitrogen. The purpose of this study was to determine the causes of thermal conversion and to examine the effects of different annealing atmospheres on this problem. It was found that conversion can be due to any of the a number of causes, rather than to one common cause. Conversion in the samples studied was associated with carbon impurities in undoped samples and with silicon in doped samples. Although manganese was found to be present in many samples, no clear association of manganese with type conversion was found. It was found that annealing under nitrogen gas was the most effective way of maintaining a semi-insulating surface layer. (Author).
Download or read book Photoluminescence Study of N type Thermal Conversion in SI GaAs written by John A. Guillen (CAPT, USAF.) and published by . This book was released on 1982 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Study of N Type Thermal Conversion in Semi Insulating GaAs written by John A. Guillen and published by . This book was released on 1982 with total page 77 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chromium doped SI GaAs samples annealed at temperatures from 650 C to 950 C were examined for n-type thermal conversion. From Van der Pauw Hall measurements, it was determined that the samples annealed at 850 C, 900 C and 950 C thermally converted. These converted samples were then subjected to resistivity profile measurements to determine the extent of the thermally converted layer. Depth resolved photoluminescence was also used to observe changes in the spectra as surface layers from the converted samples were removed. Although changes in the spectra were observed, none could be related to thermal conversion. (Author).
Download or read book Energy Research Abstracts written by and published by . This book was released on 1988 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 994 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Solar Energy Update written by and published by . This book was released on 1982-04 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Masters Theses in the Pure and Applied Sciences written by W. H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 311 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and dis seminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the ac tivity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volume were handled by an international publishing. house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 25 (thesis year 1980) a total of 10,308 theses titles from 27 Canadian and 214 United States universities. We are sure that this broader base for theses titles reported will greatly enhance the value of this important annual reference work. While Volume 25 reports theses submitted in 1980, on occasion, certain universities do report theses submitted in previous years but not reported at the time.
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semi Insulating III V Materials written by REES and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of deep levels in semiconductors has seen considerable growth in recent years. Many new techniques have become available for investigating both the electronic properties of deep levels and the chemical nature of the defects from which they arise. This increasing interest has been stimulated by the importance of the subject to device technology, in particular those microwave and opto-electronic devices made from GaAs, InP and their alloys. While previous conferences have covered specialist areas of deep level technology, the meeting described here was arranged to draw together workers from these separate fields of study. The following papers reflect the breadth of interests represented at the conference. For the sake of uniformity we have chosen the English alternative where an American expression has been used. We have also sought to improve grammar, sometimes without the approval of the author in the interests of rapid publication. The Editor wishes to thank the referees for their ready advice at all stages, Paul Jay who helped with many of the editorial duties and Muriel Howes and Lorraine Jones for rapid and accurate typing.
Download or read book Advances in Electronics and Electron Physics written by Peter W. Hawkes and published by Academic Press. This book was released on 1983-11 with total page 421 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Study of Gallium Arsenide Aluminum Gallium Arsenide and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition written by John Mark Koons and published by . This book was released on 1994 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: The photoluminescence produced by four MOCVD grown epitaxial thin film samples was studied to give insight into sample quality. The four samples under this study were GaAs on a GaAs substrate, Al2̣5Ga--̣5As on a GaAs substrate, Al3̣0Ga--̣0As on a GaAs substrate, and GaSb on a GaSb substrate. Excitation was achieved through the use of the 514.0 nm line of an argon ion laser, and sample cooling was attained by use of a cryostat cooler using helium gas to attain a low temperature limit of 10°K. The GaAs and Al3̣0Ga--̣0As samples exhibited typical spectra for MOCVD grown samples produced by other sources in the widths of the resulting BE peaks and in the characteristics, of their acceptor-induced transitions. The narrow, prominent BE peaks of the Al2̣5Ga--̣5As and GaSb samples had shown them to be of exceptional quality.
Download or read book Ceramic Abstracts written by and published by . This book was released on 1999 with total page 950 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Study of Germanium Implanted Gallium Arsenide written by Barry P. Thoma and published by . This book was released on 1985 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt: The low temperature photoluminescence properties of Ge implanted Gallium Arsenide has been analyzed. Samples were singly implanted with Ge and As, and with Ge and Ga. The substrate used was semi-insulating Chromium-doped GaAs. All ions were implanted at room temperature, with an implantation energy of 120 KeV. Dually implanted samples were first implanted with Ge, and then with either As or Ga. All samples were encapsulated before annealing with approximately 1000 A of Silicon Nitride which was subsequently removed prior to photoluminescence measurements. All samples were annealed at 900 C for 15 minutes. Two separate photoluminescence peaks related to Ge acceptors were found. They were due to a Ge donor-Ge acceptor transition and a conduction band-Ge acceptor transition. A single photoluminescence peak related to Ge donors was found. It was due to an exciton bound to a neutral donor or an ionized donor transition. Ge acceptor related peaks were found to be dominant in lower dose Ge implanted samples, and the Ge donor related peak was found to be dominant in higher dose Ge implanted samples. These characteristics were significantly modified, however, by the dual implantations. The Ge donor related peak was enhanced, and the Ge acceptor related peaks were suppressed, by the additional As implantation. To a lesser extent, the opposite was true for the additional Ga implantation.
Download or read book International bibliography of periodical literature covering all fields of knowledge written by and published by . This book was released on 1970 with total page 986 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence of Single Quantum Well Structures in Gallium Arsenide written by Christian A. Bartholomew and published by . This book was released on 2001-03-01 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continued development of state-of the-art semiconductor technologies and devices by the United States Air Force and the Department of Defense requires accurate and efficient techniques to evaluate and model these new materials. Of particular interest to the Air Force are quantum well structures which can be used for small-scale laser sources in fly-by-light applications, as efficient infrared countermeasures to heat-seeking missiles, or as advanced seekers in optically guided missiles. This thesis provides the initial experimental procedures and data necessary to begin producing accurate yet robust models. Although carrier effective masses could not be evaluated using hot-electron photoluminescence, photoluminescence excitation and temperature studies were conducted to determine the effects of strain and impurities on band structure in quantum structures. Beryllium-doped indium gallium arsenide (InGaAs:Be) quantum wells, compressively strained to lattice- match gallium arsenide, were studied, and parameters for strained energy gap, heavy hole-light hole split, and acceptor binding energy were evaluated. With the carrier effective masses fixed at accepted values, strain produced a 1.2715 eV energy gap within the well and a heavy hole-light hole split of 23.2meV. Finally, the beryllium binding energy was found to be 22.1 meV measured above the highest valence band (first quantized heavy hole band) at 300 K.
Download or read book Photoluminescence Study of Silicon and Oxygen Implanted Gallium Arsenide written by Kevin J. Keefer (CAPT, USAF.) and published by . This book was released on 1985 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt:
