Download or read book Photoluminescence of Gallium Arsenide Thin Films written by Brian Keith Bellis and published by . This book was released on 1987 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence Study of Gallium Arsenide Aluminum Gallium Arsenide and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition written by John Mark Koons and published by . This book was released on 1994 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: The photoluminescence produced by four MOCVD grown epitaxial thin film samples was studied to give insight into sample quality. The four samples under this study were GaAs on a GaAs substrate, Al2̣5Ga--̣5As on a GaAs substrate, Al3̣0Ga--̣0As on a GaAs substrate, and GaSb on a GaSb substrate. Excitation was achieved through the use of the 514.0 nm line of an argon ion laser, and sample cooling was attained by use of a cryostat cooler using helium gas to attain a low temperature limit of 10°K. The GaAs and Al3̣0Ga--̣0As samples exhibited typical spectra for MOCVD grown samples produced by other sources in the widths of the resulting BE peaks and in the characteristics, of their acceptor-induced transitions. The narrow, prominent BE peaks of the Al2̣5Ga--̣5As and GaSb samples had shown them to be of exceptional quality.

Download or read book A Photoluminescence Study of Defects in GaAs Caused by Film Deposition and Annealing written by Joseph A. Bowden and published by . This book was released on 1978 with total page 77 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photoluminescence (PL) is used to investigate changes induced in the surface layer of a Gallium Arsenide (GaAs) substrate by sputter-deposition and subsequent annealing. Since PL is both sensitive and non-destructive, it provides a powerful research tool for investigating optically active defects and impurities at near band gap energies. Emission spectra of GaAs substrates encapsulated with thin films of silicon nitride (Si3N4) by the technique of neutralized ion beam sputter-deposition reveal no optically active defects at near band gap energies. Annealing substrates encapsulated with Si3N4 adds an emission to the PL spectrum. This emission is attributed to a Gallium vacancy (Vga)-Silicon acceptor complex. This same complex may also be generated during annealing of bare GaAs substrates doped with Silicon (Si). This complex acts to compensate a n-type surface layer on the substrate and, in general, degrades its qualities. (Author).

Download or read book Photoluminescence of Gallium Arsenide Encapsulated with Aluminum and Silicon Nitride Films written by Huelya Birey and published by . This book was released on 1979 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: Aluminum and silicon nitride films were deposited on lightly doped n-type GaAs:Si by low energy ion beam sputtering. The films showed no signs of deterioration when annealed at 900 C, and the GaAs photoluminescence spectra showed new features only at the higher annealing temperatures. (Author).

Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence Studies of Gallium Nitride Thin Films Grown by Electron Cyclotron Resonance assisted Molecular Beam Epitaxy written by Rajminder Singh and published by . This book was released on 1994 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Solar Energy Update written by and published by . This book was released on 1984-12 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Thin Films of Gallium Arsenide on Low cost Substrates written by Ralph Powers Ruth and published by . This book was released on 1980 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Thin films of gallium arsenide on low cost substrates written by Rockwell International. Electronics Research Center and published by . This book was released on 1979 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence in Silicon doped Gallium Arsenide written by B. J. Garrard and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence of Single Quantum Well Structures in Gallium Arsenide written by Christian A. Bartholomew and published by . This book was released on 2001-03-01 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continued development of state-of the-art semiconductor technologies and devices by the United States Air Force and the Department of Defense requires accurate and efficient techniques to evaluate and model these new materials. Of particular interest to the Air Force are quantum well structures which can be used for small-scale laser sources in fly-by-light applications, as efficient infrared countermeasures to heat-seeking missiles, or as advanced seekers in optically guided missiles. This thesis provides the initial experimental procedures and data necessary to begin producing accurate yet robust models. Although carrier effective masses could not be evaluated using hot-electron photoluminescence, photoluminescence excitation and temperature studies were conducted to determine the effects of strain and impurities on band structure in quantum structures. Beryllium-doped indium gallium arsenide (InGaAs:Be) quantum wells, compressively strained to lattice- match gallium arsenide, were studied, and parameters for strained energy gap, heavy hole-light hole split, and acceptor binding energy were evaluated. With the carrier effective masses fixed at accepted values, strain produced a 1.2715 eV energy gap within the well and a heavy hole-light hole split of 23.2meV. Finally, the beryllium binding energy was found to be 22.1 meV measured above the highest valence band (first quantized heavy hole band) at 300 K.

Download or read book Optical Characterization for Semi insulating Gallium Arsenide microform written by Yu Zhang and published by National Library of Canada = Bibliothèque nationale du Canada. This book was released on 1991 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence of Gallium Arsenide written by Anthony V. DiValentin and published by . This book was released on 1984 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide Thin Films on Tungsten graphite Substrates written by Southern Methodist University and published by . This book was released on 1978 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt: