Download or read book Photoluminescence in Silicon doped Gallium Arsenide written by B. J. Garrard and published by . This book was released on 1982 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence of Gallium Arsenide Encapsulated with Aluminum and Silicon Nitride Films written by Huelya Birey and published by . This book was released on 1979 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: Aluminum and silicon nitride films were deposited on lightly doped n-type GaAs:Si by low energy ion beam sputtering. The films showed no signs of deterioration when annealed at 900 C, and the GaAs photoluminescence spectra showed new features only at the higher annealing temperatures. (Author).

Download or read book Thermal Annealing and Photoluminescence Measurements on Aluminum Gallium Arsenide Gallium Arsenide Quantum Well Heterostructures Containing Silicon Selenium and Magnesium Sheet Doping written by Robert William Kaliski and published by . This book was released on 1987 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence Studies of Recombination Mechanisms in Carbon doped Gallium Arsenide written by Lorraine Calderon and published by . This book was released on 1992 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence of Single Quantum Well Structures in Gallium Arsenide written by Christian A. Bartholomew and published by . This book was released on 2001-03-01 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continued development of state-of the-art semiconductor technologies and devices by the United States Air Force and the Department of Defense requires accurate and efficient techniques to evaluate and model these new materials. Of particular interest to the Air Force are quantum well structures which can be used for small-scale laser sources in fly-by-light applications, as efficient infrared countermeasures to heat-seeking missiles, or as advanced seekers in optically guided missiles. This thesis provides the initial experimental procedures and data necessary to begin producing accurate yet robust models. Although carrier effective masses could not be evaluated using hot-electron photoluminescence, photoluminescence excitation and temperature studies were conducted to determine the effects of strain and impurities on band structure in quantum structures. Beryllium-doped indium gallium arsenide (InGaAs:Be) quantum wells, compressively strained to lattice- match gallium arsenide, were studied, and parameters for strained energy gap, heavy hole-light hole split, and acceptor binding energy were evaluated. With the carrier effective masses fixed at accepted values, strain produced a 1.2715 eV energy gap within the well and a heavy hole-light hole split of 23.2meV. Finally, the beryllium binding energy was found to be 22.1 meV measured above the highest valence band (first quantized heavy hole band) at 300 K.

Download or read book Photoluminescence Study of Thermal Conversion in Gallium Arsenide written by John McLemore Anderson and published by . This book was released on 1980 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt: A photoluminescence study was made of undoped and chromium-doped gallium arsenide annealed in three different atmospheres: argon, hydrogen, and nitrogen. The purpose of this study was to determine the causes of thermal conversion and to examine the effects of different annealing atmospheres on this problem. It was found that conversion can be due to any of the a number of causes, rather than to one common cause. Conversion in the samples studied was associated with carbon impurities in undoped samples and with silicon in doped samples. Although manganese was found to be present in many samples, no clear association of manganese with type conversion was found. It was found that annealing under nitrogen gas was the most effective way of maintaining a semi-insulating surface layer. (Author).

Download or read book Photoluminescence of Heavily Zinc doped Gallium Arsenide and Gallium Indium Arsenide Grown by Low pressure Metal Organic Vapour Phase Epitaxy written by Roberto Benzaquen and published by . This book was released on 1991 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zn-doped, p-type, GaAs and $\rm Ga\sb{0.85}In\sb{0.15}As$ samples grown by low-pressure metal organic vapour phase epitaxy with free carrier concentrations in the range of n = 4.3 $\times$ 10$\sp {\rm cm}\sp{-3}$ (nominally undoped)--p = 1.95 x 10$\sp{20} {\rm cm}\sp{-3}$ at room temperature have been studied by temperature-dependent photoluminescence. At low doping levels, recombinations involving discrete impurity states and free excitons provided measurement of both the 5 K band gap ($E\sb{g}(5)=(1.296\pm0.003)$ eV) and the zinc acceptor binding energy $(E(Zn\sp0)=(0.025\pm0.003)$ eV) in the $\rm Ga\sb{0.85}In\sb{0.15}As$ alloy. At high concentrations, the discrete acceptor levels are replace by an impurity band which merges with the valence band above the Mott$\sp{\lbrack 1\rbrack}$ transition. This gives rise to a density of states band tail extending into the gap and containing both extended and localised states. In the presence of such a high density of impurities, potential fluctuations and interparticle interactions result in a band gap shrinkage $\vert \Delta E\sb{g}\vert$ which has been observed with photoluminescence experiments. A model based on the presence of Kane$\sp{\lbrack 2\rbrack}$ band tails and on the assumption of a constant matrix element for the relevant optical transitions has been fitted to the photoluminescence spectra of heavily doped layers of GaAs and $\rm Ga\sb{0.85}In\sb{0.15}As$ in the range of $p=1.6\times 10\sp $ cm$\sp{-3}-p=1.95\times 10\sp{20}$ cm$\sp{-3}.$ This model provided a good description of the experimental results. The 5 K band gap shrinkage has been found to be $\vert\Delta E\sb{g}\vert=2.7\times 10\sp{-8}p\sp{1/3}$ for GaAs and $\vert\Delta E\sb{g}\vert=1.4\times 10\sp{-8}p\sp{1/3}$ for $\rm Ga\sb{0.85}In\sb{0.15}As$ with $\vert\Delta E\sb{g}\vert$ in Ev and p in cm$\sp{-3}.$

Download or read book Gallium Arsenide and Related Compounds 1992 Proceedings of the 19th INT Symposium 28 September 2 October 1992 Karuizawa Japan written by Ikegami and published by CRC Press. This book was released on 1993-01-01 with total page 1002 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.

Download or read book Photoluminescence Studies in Aluminum doped Gallium arsenide written by Anthony James Alfrey and published by . This book was released on 1979 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence Studies of Extremely Heavily Carbon Doped Gallium Arsenide written by Bradley John Aitchison and published by . This book was released on 1990 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence Studies of Heteroepitaxial Gallium Arsenide on Silicon written by Chen-Jen Huang and published by . This book was released on 1989 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical Properties of Nitrogen Doped Gallium Arsenide Under Pressure written by Eric Albert Stinaff and published by . This book was released on 2002 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: We present new insights into the problem of the isoelectronic nitrogen (N) impurity in gallium arsenide (GaAs). By performing photoluminescence (PL), photoluminescence excitation (PLE), transmission, and time decay measurements through a broad range of pressures, we were able to positively identify and track previously unseen states arising from the N impurity. The first observation we make is of a dramatic increase in luminescence as N forms an isolated state within the gap around 22kbar. We attribute this effect to N acting as a nonradiative trapping center while still resonant with the conduction band states. We also note the appearance, above 22kbar, of a broad band-to-acceptor like emission below the band edge, which we associate with a band to N acceptor transition. The next major observation we report is of the excited state of the N[Subscript x] exciton. We find this state to be clearly identifiable for the pressure range [Difference symbol]25kbar to [Difference symbol]30kbar, and is weak in PL, but shows enormous absorption signals in PLE and transmission. The spacing of this level from N[Subscript x]-B is in good agreement with the established theory of shallow acceptor levels. We then move on to the identification of a second bound state associated with N. This state, designated N[Subscript Gamma symbol], was previously reported for the GaP system and the GaAs[Subscript l-x]P[Subscript x] alloy, but has not, until now, been positively identified in GaAs. We find the state to be degenerate with the shallow donor level for pressures up to [Difference symbol]30kbar. The emission from this state is found to possess unique N characteristics and is seen to move in pressure with both shallow and deep like properties. We conclude with a discussion of the process of lasing in N doped GaAs. We present data consistent with previous studies of the lasing process in GaAs. However, we find an intriguing trend with pressure as we approach the [Gamma]-X crossover. The lasing gain begins to shift in a manner similar to N[Subscript Gamma]. In fact, N[Subscript Gamma] appears to act as an upper bound on the laser emission. We believe this to be preliminary evidence of the influence of N on the lasing mechanism.

Download or read book Photoluminescence Studies of Selectively Grown Gallium Arsenide on Silicon written by Emmanuil Harlambos Lingunis and published by . This book was released on 1990 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical Absorption and Photoluminescence of Doped GaAs and In subscript X Ga1 subscript X As written by Chung-mou Chang and published by . This book was released on 1964 with total page 51 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide and Related Compounds 1991 Proceedings of the Eighteenth INT Symposium 9 12 September 1991 Seattle USA written by Gerald B. Stringfellow and published by CRC Press. This book was released on 2020-11-25 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.

Download or read book Publications of the National Institute of Standards and Technology Catalog written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1971 with total page 810 pages. Available in PDF, EPUB and Kindle. Book excerpt: