Download or read book Phosphorus Diffusion Into Silicon Through an Oxide Layer written by Dawon Kahng and published by . This book was released on 1959 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Diffusion of Impurities Into Silicon Through an Oxide Layer written by M. O. Thurston and published by . This book was released on 1963 with total page 1 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radioactive tracer measurements and theoretical calculations have been continued in an attempt to clarify the surface and interface conditions during diffusion of phosphorus into silicon through an oxide layer. (Author).

Download or read book Antimony Diffusion Into Silicon Through an Oxide Layer written by Hsing-San Lee and published by . This book was released on 1960 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Surface Properties of Oxidized Silicon written by Else Kooi and published by Springer. This book was released on 2013-12-21 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Diffusion in and through solids written by R.M. Barrer and published by Рипол Классик. This book was released on 1941 with total page 479 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Diffusion of impurities into silicon through an oxide layer written by Ohio State University. Research Foundation and published by . This book was released on 1961* with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Device Processing written by Charles P. Marsden and published by . This book was released on 1970 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).

Download or read book Silicon Device Processing written by Charles P. Marsden and published by . This book was released on 1970 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).

Download or read book Diffusion of Phosphorus and Boron Into Silicon Through Silicon Monoxide Layers written by Chao-Chen Mai and published by . This book was released on 1967 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Thermal Growth and Chemical Etching of Silicon Dioxide Film written by Chao Chen Mai and published by . This book was released on 1965 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: Some important factors that affect the dimensional control of oxide films on silicon were studied. Both N- and P-type silicon with resistivities in the range of 0.014 to 200 ohm-cm and a (111) surface orientation were employed in this experiment. The etching rates of silicon dioxide in hydrofluoric acid (111) were studied as a function of the concentration of HF, temperature, and stirring speed. The experimental results show that the etching rates varied directly with these variables, but no difference in etching rate was found due to concentration or type of impurity in the silicon substrate over the range studied. The oxide layers on silicon used in this experiment were prepared by five different oxidation methods. They are: wet oxygen, dry oxygen, steam, wet nitrogen during diffusion of boron, and dry oxygen during diffusion of phosphorus. The etching rates of the oxide layer grown by the above methods have the same average value except for the oxide layer grown in dry oxygen during a phosphorus diffusion which has a much faster etching rate. The thickness of the oxide layers employed in this experiment was determined by a multiple-beam interference method. Comparisons of this method to other optical interference methods were made. It was found that the multiple-beam method was the most accurate of the four interference techniques.

Download or read book U S Government Research Reports written by and published by . This book was released on 1962 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Impurity Doping Processes in Silicon written by F.F.Y. Wang and published by Elsevier. This book was released on 2012-12-02 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

Download or read book Effect of Oxidations on Phosphorus diffused Crystalline silicon Substrates written by and published by . This book was released on 1996 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: Phosphorus diffusions are used in the fabrication process for nearly all crystalline-silicon (c-Si) photovoltaic solar cells to form the emitter of the solar cell. These phosphorous diffusions are also well known to have beneficial gettering benefits, i.e., deleterious metallic impurities are gettered from the bulk of the c-Si substrate into the phosphorous doped layer. In this study, we examined the effect of oxidations performed after the phosphorus diffusion. We were particularly interested in using the oxidation to passivate the surface of the phosphorus diffusion. Post-diffusion oxidations or moderate temperature steps in oxidizing ambients are also commonly found in commercial fabrication sequences of c-Si solar cells. we found that the bulk lifetime was degraded in Czochralski (Cz) silicon due to the post-diffusion oxidation unless there was a gettering agent present during the oxidation. Possible explanations for these results are presented at the end of the paper.

Download or read book Integrated Silicon Device Technology Diffusion written by Research Triangle Institute and published by . This book was released on 1964 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Enhanced Phosphorus Diffusion During Thermal Oxidation of Silicon written by Nanseng Jeng and published by . This book was released on 1991 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Diffusion of Phosphorous and Boron Into Silicon Through Silicon Monoxide Layers written by Chao-Chen Mai and published by . This book was released on 1968 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Introduction to Diffusion in Semiconductors written by Brian Tuck and published by . This book was released on 1974 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: