Download or read book Performances et fiabilit des transistors MOS SUB 0 1 mu m written by Bogdan Mihail Cretu and published by . This book was released on 2003 with total page 151 pages. Available in PDF, EPUB and Kindle. Book excerpt: L'objet de notre travail est relatif à une analyse prospective de l'évolution de la fiabilité et des effets de canal court compte tenu de l'avancée des technologies induite par la miniaturisation, particulièrement pour des transistors MOS de longueur de grille inférieure à 0.1æm. Nous présentons une approche simple des équations qui modélisent le fonctionnement du transistor MOS et nous introduisons les effets liés à la réduction des dimensions. Les effets de canaux court ont été étudiés en fonction de la température. Une méthode originale d'extraction des paramètres qui prend en compte le deuxième facteur d'atténuation de la mobilité et une nouvelle méthode dite "ratio" pour l'extraction de la longueur effective du canal et de la tension de seuil sont proposées. Les effets des porteurs chauds ont été également analysés en fonction de la température. Les mécanismes et les modèles d'ionisation par impact sont présentés afin de mieux comprendre les processus de génération des porteurs chauds. La dégradation induite par injection de porteurs chauds a été mise en évidence pour chaque technologie disponible. A cet égard, l'impact du type de contrainte électrique et de l'architecture technologique sur la fiabilité des composants a été étudié. Une méthode originale d'évaluation de la contribution du canal et des extensions source-drain sur la dégradation totale est présentée. La durée de vie des dispositifs a été extrapolée afin de déterminer une tension de drain maximale pour laquelle les composants peuvent fonctionner durant une période raisonnablement longue.

Download or read book G n ration des porteurs chauds et fiabilit des transistors mos sub 0 1 m written by Bertrand Marchand and published by . This book was released on 1999 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt: L'ETUDE DES EFFETS DE PORTEURS CHAUDS POUVANT INDUIRE UNE DEGRADATION ELECTRIQUE DES CIRCUITS INTEGRES EST D'UNE GRANDE IMPORTANCE POUR LES COMPOSANTS AVANCES. DANS LES TRANSISTORS FORTEMENT SUBMICRONIQUES, LA CARACTERISATION ET LA MODELISATION A TEMPERATURE AMBIANTE ET A BASSES TEMPERATURES DE L'IONISATION SECONDAIRE PAR IMPACT ET DU COURANT DE GRILLE QUI EN RESULTE, COMPLETEE PAR L'ETUDE DE L'EMISSION LUMINEUSE LIEE A CE MECANISME, ONT ETE MENEES A BIEN, APPORTANT UNE MEILLEURE COMPREHENSION DE LA GENERATION DE PORTEURS CHAUDS DONT L'ENERGIE EST RESPONSABLE DE LA CREATION D'ETATS D'INTERFACE ET DE LA DEGRADATION DES PERFORMANCES DES COMPOSANTS. TIRANT PROFIT DE L'ACCELERATION DU VIEILLISSEMENT ELECTRIQUE PAR L'INTENSIFICATION DE L'IONISATION SECONDAIRE, UNE NOUVELLE METHODE DE PREDICTION DE LA DUREE DE VIE DES TRANSISTORS DANS LEURS CONDITIONS NOMINALES DE POLARISATION EST PROPOSEE. ENFIN, L'IMPACT DU TYPE DE CONTRAINTE ELECTRIQUE ET DE L'ARCHITECTURE TECHNOLOGIQUE SUR LA FIABILITE DES COMPOSANTS SONT ETUDIES.

Download or read book Technology Computer Aided Design written by Chandan Kumar Sarkar and published by CRC Press. This book was released on 2018-09-03 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.

Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Download or read book Ultra Low Noise CMOS Image Sensors written by Assim Boukhayma and published by Springer. This book was released on 2017-11-28 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis provides a thorough noise analysis for conventional CIS readout chains, while also presenting and discussing a variety of noise reduction techniques that allow the read noise in standard processes to be optimized. Two physical implementations featuring sub-0.5-electron RMS are subsequently presented to verify the proposed noise reduction techniques and provide a full characterization of a VGA imager. Based on the verified noise calculation, the impact of the technology downscaling on the input-referred noise is also studied. Further, the thesis covers THz CMOS image sensors and presents an original design that achieves ultra-low-noise performance. Last but not least, it provides a comprehensive review of CMOS image sensors.

Download or read book Power Electronics Semiconductor Devices written by Robert Perret and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.

Download or read book Semiconductor Optoelectronic Devices written by Joachim Piprek and published by Elsevier. This book was released on 2013-10-22 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronics has become an important part of our lives. Wherever light is used to transmit information, tiny semiconductor devices are needed to transfer electrical current into optical signals and vice versa. Examples include light emitting diodes in radios and other appliances, photodetectors in elevator doors and digital cameras, and laser diodes that transmit phone calls through glass fibers. Such optoelectronic devices take advantage of sophisticated interactions between electrons and light. Nanometer scale semiconductor structures are often at the heart of modern optoelectronic devices. Their shrinking size and increasing complexity make computer simulation an important tool to design better devices that meet ever rising perfomance requirements. The current need to apply advanced design software in optoelectronics follows the trend observed in the 1980's with simulation software for silicon devices. Today, software for technology computer-aided design (TCAD) and electronic design automation (EDA) represents a fundamental part of the silicon industry. In optoelectronics, advanced commercial device software has emerged recently and it is expected to play an increasingly important role in the near future. This book will enable students, device engineers, and researchers to more effectively use advanced design software in optoelectronics. Provides fundamental knowledge in semiconductor physics and in electromagnetics, while helping to understand and use advanced device simulation software Demonstrates the combination of measurements and simulations in order to obtain realistic results and provides data on all required material parameters Gives deep insight into the physics of state-of-the-art devices and helps to design and analyze of modern optoelectronic devices

Download or read book Silicon written by Paul Siffert and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: With topics ranging from epitaxy through lattice defects and doping to quantum computation, this book provides a personalized survey of the development and use of silicon, the basis for the revolutionary changes in our lives sometimes called "The Silicon Age." Beginning with the very first developments more than 50 years ago, this reports on all aspects of silicon and silicon technology up to its use in exciting new technologies, including a glance at possible future developments.

Download or read book Failure Analysis written by Marius Bazu and published by John Wiley & Sons. This book was released on 2011-03-08 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Failure analysis is the preferred method to investigate product or process reliability and to ensure optimum performance of electrical components and systems. The physics-of-failure approach is the only internationally accepted solution for continuously improving the reliability of materials, devices and processes. The models have been developed from the physical and chemical phenomena that are responsible for degradation or failure of electronic components and materials and now replace popular distribution models for failure mechanisms such as Weibull or lognormal. Reliability engineers need practical orientation around the complex procedures involved in failure analysis. This guide acts as a tool for all advanced techniques, their benefits and vital aspects of their use in a reliability programme. Using twelve complex case studies, the authors explain why failure analysis should be used with electronic components, when implementation is appropriate and methods for its successful use. Inside you will find detailed coverage on: a synergistic approach to failure modes and mechanisms, along with reliability physics and the failure analysis of materials, emphasizing the vital importance of cooperation between a product development team involved the reasons why failure analysis is an important tool for improving yield and reliability by corrective actions the design stage, highlighting the ‘concurrent engineering' approach and DfR (Design for Reliability) failure analysis during fabrication, covering reliability monitoring, process monitors and package reliability reliability resting after fabrication, including reliability assessment at this stage and corrective actions a large variety of methods, such as electrical methods, thermal methods, optical methods, electron microscopy, mechanical methods, X-Ray methods, spectroscopic, acoustical, and laser methods new challenges in reliability testing, such as its use in microsystems and nanostructures This practical yet comprehensive reference is useful for manufacturers and engineers involved in the design, fabrication and testing of electronic components, devices, ICs and electronic systems, as well as for users of components in complex systems wanting to discover the roots of the reliability flaws for their products.

Download or read book Silicon on Insulator Technology Materials to VLSI written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2004-02-29 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, also describes the properties of other SOI devices, such as multiple gate MOSFETs, dynamic threshold devices and power MOSFETs. The advantages and performance of SOI circuits used in both niche and mainstream applications are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition is recommended for use as a textbook for classes on semiconductor device processing and physics at the graduate level.

Download or read book Analog Circuit Design written by Herman Casier and published by Springer Science & Business Media. This book was released on 2008-03-19 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analog Circuit Design is based on the yearly Advances in Analog Circuit Design workshop. The aim of the workshop is to bring together designers of advanced analogue and RF circuits for the purpose of studying and discussing new possibilities and future developments in this field. Selected topics for AACD 2007 were: (1) Sensors, Actuators and Power Drivers for the Automotive and Industrial Environment; (2) Integrated PA's from Wireline to RF; (3) Very High Frequency Front Ends.

Download or read book Dictionary of Acronyms and Technical Abbreviations written by Jakob Vlietstra and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 703 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Dictionary covers information and communication technology (ICT), including hardware and software; information networks, including the Internet and the World Wide Web; automatic control; and ICT-related computer-aided fields. The Dictionary also lists abbreviated names of relevant organizations, conferences, symposia and workshops. This reference is important for all practitioners and users in the areas mentioned above, and those who consult or write technical material. This Second Edition contains 10,000 new entries, for a total of 33,000.

Download or read book Advanced Power MOSFET Concepts written by B. Jayant Baliga and published by Springer Science & Business Media. This book was released on 2010-06-26 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. "Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.

Download or read book Modern Power Devices written by B. Jayant Baliga and published by Wiley-Interscience. This book was released on 1987-03-10 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written in a tutorial form, the text supplies in-depth the physics, design, and fabrication technology for power devices. Each chapter includes a discussion of the basic concepts of device operation and their electrical characteristics, a detailed analysis of the device physics, and the technology of fabrication. Extensive analytical solutions are used to enable the reader to obtain an understanding of the physics.

Download or read book Power Electronic Packaging written by Yong Liu and published by Springer Science & Business Media. This book was released on 2012-02-15 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronic Packaging presents an in-depth overview of power electronic packaging design, assembly,reliability and modeling. Since there is a drastic difference between IC fabrication and power electronic packaging, the book systematically introduces typical power electronic packaging design, assembly, reliability and failure analysis and material selection so readers can clearly understand each task's unique characteristics. Power electronic packaging is one of the fastest growing segments in the power electronic industry, due to the rapid growth of power integrated circuit (IC) fabrication, especially for applications like portable, consumer, home, computing and automotive electronics. This book also covers how advances in both semiconductor content and power advanced package design have helped cause advances in power device capability in recent years. The author extrapolates the most recent trends in the book's areas of focus to highlight where further improvement in materials and techniques can drive continued advancements, particularly in thermal management, usability, efficiency, reliability and overall cost of power semiconductor solutions.

Download or read book Semiconductor Device Reliability written by A. Christou and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 571 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication is a compilation of papers presented at the Semiconductor Device Reliabi lity Workshop sponsored by the NATO International Scientific Exchange Program. The Workshop was held in Crete, Greece from June 4 to June 9, 1989. The objective of the Workshop was to review and to further explore advances in the field of semiconductor reliability through invited paper presentations and discussions. The technical emphasis was on quality assurance and reliability of optoelectronic and high speed semiconductor devices. The primary support for the meeting was provided by the Scientific Affairs Division of NATO. We are indebted to NATO for their support and to Dr. Craig Sinclair, who admin isters this program. The chapters of this book follow the format and order of the sessions of the meeting. Thirty-six papers were presented and discussed during the five-day Workshop. In addi tion, two panel sessions were held, with audience participation, where the particularly controversial topics of bum-in and reliability modeling and prediction methods were dis cussed. A brief review of these sessions is presented in this book.

Download or read book Analog IC Reliability in Nanometer CMOS written by Elie Maricau and published by Springer Science & Business Media. This book was released on 2013-01-11 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed. The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.