Download or read book Semiconductor Characterization Techniques written by Peter A. Barnes and published by . This book was released on 1978 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Silicon 1977 written by Howard R. Huff and published by . This book was released on 1977 with total page 1170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties and Microstructure written by R. K. MacCrone and published by Elsevier. This book was released on 2013-10-22 with total page 473 pages. Available in PDF, EPUB and Kindle. Book excerpt: Treatise on Materials Science and Technology, Volume 11: Properties And Microstructure covers the parameters important to understanding microstructural effects. The book discusses the direct observation and characterization of defects in materials; the cause and effect of crystal defects in silicon integrated circuits; as well as the microstructure of some noncrystalline ceramics. The text also describes microstructural defects in the important semiconductors silicon and germanium, microstructural effects in glasses, microstructural effects on the mechanical properties of ceramics, and finally, microstructures in ferrites. Materials scientists, materials engineers, and graduate students taking related courses will find the book invaluable.
Download or read book Ultraclean Surface Processing of Silicon Wafers written by Takeshi Hattori and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 634 pages. Available in PDF, EPUB and Kindle. Book excerpt: A totally new concept for clean surface processing of Si wafers is introduced in this book. Some fifty distinguished researchers and engineers from the leading Japanese semiconductor companies, such as NEC, Hitachi, Toshiba, Sony and Panasonic as well as from several universities reveal to us for the first time the secrets of these highly productive institutions. They describe the techniques and equipment necessary for the preparation of clean high-quality semiconductor surfaces as a first step in high-yield/high-quality device production. This book thus opens the door to the manufacturing of reliable nanoscale devices and will be extremely useful for every engineer, physicist and technician involved in the production of silicon semiconductor devices.
Download or read book Semiconductor Silicon Crystal Technology written by Fumio Shimura and published by Elsevier. This book was released on 2012-12-02 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Silicon Crystal Technology provides information pertinent to silicon, which is the dominant material in the semiconductor industry. This book discusses the technology of integrated circuits (ICs) in electronic materials manufacturer. Comprised of eight chapters, this book provides an overview of the basic science, silicon materials, IC device fabrication processes, and their interaction for enhancing both the processes and materials. This text then proceeds with a discussion of the atomic structure and bonding mechanisms in order to understand the nature and formation of crystal structures, which are the fundamentals of material science. Other chapters consider the technological crystallography and classify natural crystal morphologies based on observation. The final chapter deals with the interrelationships among silicon material characteristics, circuit design, and IC fabrication in order to ensure the fabrication of very-large-scale-integration/ultra-large-scale-integration circuits. This book is a valuable resource for graduate students, physicists, engineers, materials scientists, and professionals involved in semiconductor industry.
Download or read book Handbook of Silicon Based MEMS Materials and Technologies written by Markku Tilli and published by William Andrew. This book was released on 2015-09-02 with total page 827 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Silicon Based MEMS Materials and Technologies, Second Edition, is a comprehensive guide to MEMS materials, technologies, and manufacturing that examines the state-of-the-art with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains the fundamentals, properties (mechanical, electrostatic, optical, etc.), materials selection, preparation, manufacturing, processing, system integration, measurement, and materials characterization techniques, sensors, and multi-scale modeling methods of MEMS structures, silicon crystals, and wafers, also covering micromachining technologies in MEMS and encapsulation of MEMS components. Furthermore, it provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques, shows how to protect devices from the environment, and provides tactics to decrease package size for a dramatic reduction in costs. - Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques - Shows how to protect devices from the environment and decrease package size for a dramatic reduction in packaging costs - Discusses properties, preparation, and growth of silicon crystals and wafers - Explains the many properties (mechanical, electrostatic, optical, etc.), manufacturing, processing, measuring (including focused beam techniques), and multiscale modeling methods of MEMS structures - Geared towards practical applications rather than theory
Download or read book Wafer Manufacturing Shaping of Single Crystal Silicon Wafers written by Imin Cao and published by John Wiley & Sons. This book was released on 2020-12-31 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presenting all the major stages in wafer manufacturing, from crystals to prime wafers. This book first outlines the physics, associated metrology, process modelling and quality requirements and the goes on to discuss wafer forming and wafer surface preparation techniques. The whole is rounded off with a chapter on the research and future challenges in wafer manufacturing.
Download or read book Crystal Growth and Evaluation of Silicon for VLSI and ULSI written by Golla Eranna and published by CRC Press. This book was released on 2014-12-08 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.
Download or read book Ion Implantation Basics to Device Fabrication written by Emanuele Rimini and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Download or read book Defects and Impurities in Silicon Materials written by Yutaka Yoshida and published by Springer. This book was released on 2016-03-30 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Download or read book Silicon Integrated Circuits written by Dawon Kahng and published by Academic Press. This book was released on 2013-10-22 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, and engineers involved in silicon integrated circuits will find the book invaluable.
Download or read book Proceedings of the Fourth International Symposium on High Purity Silicon written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 1996 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Technology Evolution for Silicon Nano Electronics written by Seiichi Miyazaki and published by Trans Tech Publications Ltd. This book was released on 2011-02-21 with total page 245 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan
Download or read book The Effect of Oxidation on Impurity Diffusion and Stacking Fault Growth in Silicon written by Stanford University. Stanford Electronics Laboratories. Integrated Circuits Laboratory and published by . This book was released on 1982 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Technology ISTC 2001 written by Ming Yang and published by . This book was released on 2001 with total page 688 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Download or read book Silicon Chemical Etching written by J. Grabmaier and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the first contribution to this volume we read that the world-wide production of single crystal silicon amounts to some 2000 metric tons per year. Given the size of present-day silicon-crystals, this number is equivalent to 100000 silicon-crystals grown every year by either the Czochralski (80%) or the floating-zone (20%) technique. But, to the best of my knowledge, no coherent and comprehensive article has been written that deals with "the art and science", as well as the practical and technical aspects of growing silicon crystals by the Czochralski technique. The same could be said about the floating-zone technique were it not for the review article by W. Dietze, W. Keller and A. Miihlbauer which was published in the preceding Volume 5 ("Silicon") of this series (and for a monograph by two of the above authors published about the same time). As editor of this volume I am very glad to have succeeded in persuading two scien tists, W. Zulehner and D. Huber, of Wacker-Chemitronic GmbH - the world's largest producer of silicon-crystals - to write a comprehensive article about the practical and scientific aspects of growing silicon-crystals by the Czochralski method and about silicon wafer manufacture. I am sure that many scientists or engineers who work with silicon crystals -be it in the laboratory or in a production environment - will profit from the first article in this volume.
