Download or read book Organometallic Vapor Phase Epitaxy written by Gerald B. Stringfellow and published by Elsevier. This book was released on 2012-12-02 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.
Download or read book Organometallic Vapor Phase Epitaxy written by and published by . This book was released on 1992 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Organometallic Vapor Phase Epitaxy OMVPE written by William G. Breiland and published by . This book was released on 1999 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Download or read book OMVPE Organometallic Vapor Phase Epitaxy Growth of GaInAs written by C. P. Kuo and published by . This book was released on 1983 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ACCGE 20 OMVPE 17 The 20th American Conference on Crystal Growth and Epitaxy in Conjunction with the 17th US Biennial Workshop on Organometallic Vapor Phase Epitaxy August 2 7 2015 Big Sky MT USA written by Tania Paskova and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book OMVPE 11 written by Rajaram Bhat and published by . This book was released on with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Organometallic Vapor Phase Epitaxy OMVPE Reactor Design for GaN Film Growth written by Hang-Yip Liu and published by . This book was released on 1995 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Organometallic Vapour Phase Epitaxy OMVPE written by and published by . This book was released on 1999 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Novel Precursors for Organometallic Vapor Phase Epitaxy written by and published by . This book was released on 1992 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the development of organometallic vapor phase epitaxy (OMVPE) for the growth of III/V semiconductor materials, the choice of group III and group V source molecules has been limited: (1) only trimethyl- and triethyl- group IV and antimony compounds, developed for other applications, were available; (2) the hydrides were the only As and P sources capable of producing device quality material. The hazard posed by the hydride sources, due to their extreme toxicity as well as their storage in high pressure cylinders, was a major motivation for the development of new precursor molecules. This led to the realization that many features of the OMVPE process could be improved by the development of designer source molecules. This paper will emphasize the tertiarybutyl- As, P, and Sb precursors C4H9AsH2, C4H9PH2, and C4H9Sb(CH3)2. However, recent results using alternate In precursors, such as triisopropylindium (C3H7)31n, will be included. The fundamental aspects of the design of source molecules, including pyrolysis routes, will be mentioned; however, the focus is on the practical results obtained using these precursors for the OMVPE growth of III/V semiconductors.
Download or read book ICCGE 19 OMVPE 19 Program and Abstracts eBook written by ICCGE-19/OMVPE-19/AACG and published by CTI Meeting Technology. This book was released on 2019-07-11 with total page 940 pages. Available in PDF, EPUB and Kindle. Book excerpt: A collection of abstracts for the 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) to be held jointly with the 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19) and the 17th International Summer School on Crystal Growth (ISSCG-17).
Download or read book Mechanistic Study of Organometallic Vapor Phase Epitaxy written by and published by . This book was released on 1990 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: Only AsH3 and PH3 have been used as the group V source molecules for organometallic vapor phase epitaxy (OMVPE) of III/V semiconductors until recently, since they have been the only precursors yielding device quality materials. This paper reviews recent work on the pyrolysis of individual organometallic molecules, with emphasis on the group V sources, including: (1) the methylarsines, di- and tri-methylarsine, (2) the ethylarsines, mono-, di-, and tri-ethylarsine, and (3) the singly substituted tertiarybutyl arsine and phosphine molecules. The pyrolysis and growth reactions occurring when both group III and group V precursors are present simultaneously, i.e., the reactions occuring during OMVPE growth of several III/V semiconductors, are also briefly reviewed.
Download or read book Basic Principles of Organometallic Vapor Phase Epitaxy written by and published by . This book was released on 1992 with total page 22 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystal growth processes in general and epitaxy in particular are often discussed in terms three disciplines: thermodynamics, mass transport and hydrodynamics, and chemical reaction kinetics. This paper will concentrate on two of these, the thermodynamic and kinetic aspects of organometallic vapor phase epitaxy (OMVPE). Three major influences of thermodynamics will be discussed: (1) Thermodynamics defines the driving force and hence the upper limit of growth rate. This occurs only when all reactants in the system are allowed to equilibrate with the substrate. (2) Thermodynamics often controls stoichiometry and the solid composition of alloys. An understanding of thermodynamic and kinetic constraints leads to the ability to grow metastable alloys. (3) The driving force for phase separation and/or ordering into natural superlattice structures during growth is also governed by thermodynamics. The actual ordered structures observed are dependent on the surface kinetics. This aspect of kinetics will be addressed in addition to the kinetics of both homogeneous and heterogeneous chemical reactions occurring for a variety of precursor molecules. Each of these topics is addressed in terms of fundamental concepts, with examples from recent research on the OMVPE growth of III/V semiconductor compounds and alloys.
Download or read book Ligand Exchange Reactions in Organometallic Vapor Phase Epitaxy written by and published by . This book was released on 1997 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The organometallic vapor phase epitaxy (OMVPE) of CdZnTe and InGaAs alloys has been studied using on-line infrared spectroscopy and ex-situ X-ray crystallography. During II-VI OMVPE, ligand exchange reactions between dimethylcadmium and diethylzinc produce more reactive ethylcadmium species, and less reactive methylzinc species. During III-V OMVPE, reactions between trimethylindium and triethylgallium produce more reactive ethylindium compounds and less reactive methylgallium compounds. The large difference in reactivities of these sources makes it difficult to control the group II and III composition during CdZnTe and InGaAs OMVPE.
Download or read book Proceedings of the 11th Biennial US Workshop on Organometallic Vapor Phase Epitaxy written by Workshop on Organometallic Vapor Phase Epitaxy. 11, 2003, Keystone, Colo.. and published by . This book was released on 2004 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt:
