Download or read book Organometallic Chemical Vapor Deposition of GaAs written by Peter Wai-Man Lee and published by . This book was released on 1988 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Organometallic Chemical Vapor Deposition Growth of Sb Compounds GaAs subscript 1 x Sb subscript X InSb and InAs subscript 1 x Sb subscript X written by Peng-Kuen Chiang and published by . This book was released on 1984 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metalorganic Chemical Vapor Deposition MOCVD of GaAs Using Organometallic Arsenic Precursors written by Thomas Robert Omstead and published by . This book was released on 1989 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Organometallic Chemical Vapor Deposition of GaAs on Foreign Substrates written by Shambhu K. Shastry and published by . This book was released on 1982 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Effect of OMCVD Organometallic Chemical Vapor Deposition Reactor Renovations on GaAs Epilayer Growth written by Donna M. Speckman and published by . This book was released on 1987 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt: A major redesign and rebuilding of The Aerospace Corporation's Organometallic Chemical Vapor Deposition (OMCVD) reactor has been carried out. The entire gas-handling system was redesigned and replaced in order to reduce gas contamination, and new high-precision mass flow controllers and temperature baths were installed. Carrier gas flow through the organometallic bubblers was modified for improved safety and reliability, and gas lines that allow for the utilization of several different organometallic gallium and arsenic sources were also installed. Gallium arsenide (GaAs) epilayers grown using trimethylgallium (Me3Ga) and arsine (AsH3) in this reactor system following its renovation have consistently exhibited purity levels that are significantly higher than those of epilayers previously grown at The Aerospace Corporation. Epitaxial GaAs films ( -4 microm thick) with excellent surface morphologies have been obtained which exhibit carrier concentrations of 3 x 10 14/cm to the 3rd power and 77 K mobilities of approximately 68,000 sq. cm/V-s. These physical and electrical characteristics are representative of state-of-the-art unintentionally doped GaAs. Keywords: Gallium arsenide; Epitaxy.

Download or read book Alternatives to Arsine The Atmospheric Pressure Organometallic Chemical Vapor Deposition Growth of GaAs Using Triethylarsenic written by Donna M. Speckman and published by . This book was released on 1987 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: Studies on the homoepitaxial growth of unintentionally doped GaAs by atmospheric pressure organometallic chemical vapor deposition using triethylarsenic and trimethylgallium have been carried out, and the effects of growth temperature, V/III ratio, and flow rate on film characteristics are reported. Mirror-like epitaxial layers of n-type GaAs were obtained at substrate temperatures of 540-650 C and at V/III ratios of 6.7-11. The carrier concentrations for these films were approximately 10 to the 16th - 10 to the 17th CC, and from secondary ion mass spectroscopic analysis, the predominant epilayer impurities were determined to be both carbon and silicon.

Download or read book Mechanisms of Reactions of Organometallic Compounds with Surfaces written by D.J. Cole-Hamilton and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: A NATO Advanced Research Workshop on the "Mechanisms of Reactions of Organometallic Compounds with Surfaces" was held in St. Andrews, Scotland in June 1988. Many of the leading international researchers in this area were present at the workshop and all made oral presentations of their results. In addition, significant amounts of time were set aside for Round Table discussions, in which smaller groups considered the current status of mechanistic knowledge, identified areas of dispute or disagreement, and proposed experiments that need to be carried out to resolve such disputes so as to advance our understanding of this important research area. All the papers presented at the workshop are collected in this volume, together with summaries of the conclusions reached at the Round Table discussions. The workshop could not have taken place without financial support from NATO, and donations were also received from Associated Octel, Ltd., STC Ltd., and Epichem Ltd., for which the organisers are very grateful. The organisation of the meeting was greatly assisted by Mrs G. MacArthur and Mr L.R. Dunley of the Chemistry Department, St. Andrews University.

Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Download or read book Gallium arsenide Metalorganic Chemical Vapor Deposition with Alkyl Arsenic Sources written by Dietrich W. Vook and published by . This book was released on 1989 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Vapor Deposition written by M. L. Hitchman and published by Academic Press. This book was released on 1993-04-13 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging volume covers recent developments in the theoretical understanding of the chemistry and physics of chemical vapour deposition (CVD). Contributors are drawn from both academia and industry to achieve a balaced coverage of the subject. The volume emphasizes principles and understanding rather than details of specific materials or processes. Specific examples are given to illustrate the principles.

Download or read book CVD of Compound Semiconductors written by Anthony C. Jones and published by John Wiley & Sons. This book was released on 2008-11-20 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials. Topics included: * techniques for compound semiconductor growth * metalorganic precursors for III-V MOVPE * metalorganic precursors for II-VI MOVPE * single-source precursors * chemical beam epitaxy * atomic layer epitaxy Several useful appendixes and a critically selected, up-to-date list of references round off this practical handbook for materials scientists, solid-state and organometallic chemists, and engineers.

Download or read book Dual Susceptor OMCVD Organometallic Chemical Vapor Deposition for Production of Heterostructure Materials written by Ronald P. Gale and published by . This book was released on 1988 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt: A new generation of electronic and photonic devices requires advanced heterostructures. The large-scale production of high electron mobility transistors and quantum-well optoelectronic devices requires the deposition of atomically abrupt layers of gallium arsenide and related III-V materials uniformly over large areas. This Phase SBIR project addresses the application of organometallic chemical vapor deposition (OMCVD) to this purpose. In brief, the innovation described here comprises dual rotating vertical surfaces onto which GaAs substrate wafers are mounted. These surfaces (susceptors) are heated to the crystal growth temperature, so that when the chemical vapor that contains the Ga and As passes between the rotating susceptors, a thin film with an atomically abrupt interface is deposited. (JES).

Download or read book Application of a Resistance Heater to the MOCVD Metal Organic Chemical Vapor Deposition Growth of Undoped and Se Doped GaAS written by S. I. Boldish and published by . This book was released on 1985 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: Described is the quartz-envelope (quartz glass outer jacket) heater, a new type of resistance heater for metal-organic chemical vapor deposition (MOCVD) systems capable of heating substrates to between 600 and 800 C. Results of expitaxial growth and electrical characterization of undoped and Se-doped GaAs from trimethylgallium and arsine are presented. Heate design and application to MOCVD growth and GaAs are detailed. The GaAs epitaxial layers were electrically characterized by Hall effect and Miller profiler measurements. Mobility-versus-free-carrier-co ncentration curves for Se-doped GaAs prepared with the quartz-envelope heater and doped GaAs grown by various MOCVD, vapor-phase epitaxy, and liquid-phase epitaxy techniques indicate the comparable or superior mobilities of material grown with the quartz-envelope heater. Keywords include: Electrical properties; Epitaxial growth; GaAs; Heater design; Metal-organic chemical vapor deposition; MOCVD; Organometallic vapor phase epitaxy; and OMVPE.

Download or read book Novel Techniques for the Fabricating and Characterization of GaAs MIS Metal Insulator Semiconductor Structures written by R. S. Ehle and published by . This book was released on 1984 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt: Organometallic chemical vapor deposition (OMCVD) of Al2O3 on GaAs has been investigated as a means of fabricating metal-insulator-semiconductor field effect transistors (MISFET). Deposition at temperatures less than 400C forms high-quality films of Al2O3. Diffusion can alter the composition during high-temperature anneals. In-situ etching of the GaAs just prior to depositing the Al2O3 markedly reduced surface generation velocities, but inversion at the interface was not conclusively demonstrated. (Author).

Download or read book CVD of Nonmetals written by William S. Rees, Jr. and published by John Wiley & Sons. This book was released on 2008-09-26 with total page 441 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by leading experts in the field, this practical reference handbook offers an up-to-date, critical survey of the chemical vapor deposition (CVD) of nonmetals, a key technology in semiconductor electronics, finishing, and corrosion protection. The basics necessary for any CVD process are discussed in the introduction. In the following chapters, precursor requirements, with an emphasis on materials chemistry, common structures of reactants and substrates, as well as reaction control are discussed for a broad range of compositions including superconducting, conducting, semiconducting, insulating and structural materials. Technological issues, such as reactor geometries and operation parameters, are assessed and the viability of the method, both technically and economically, is compared with other techniques for the preparation of thin films. Relevant materials and technical data are collected in tables throughout. An extensive glossary, list of abbreviations and acronyms, and over 1400 references round off this impressive work. The 'CVD of Nonmetals' offers a stimulating combination of basic concepts and practical applications. Materials scientists, solid-state and organometallic chemists, physicists, engineer, as well as graduate students will find this book of enomous value.

Download or read book Epitaxial Growth and Electro Optical Properties of Metal GaAs Superlattices written by and published by . This book was released on 1995 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: Under the SDIO/IST support (grant N00014-90-J-1761), we have made progress in the investigation of the metal systems that are thermodynamically stable on GaAs. Successful growth of the single phase PtGa2 and CoGa on GaAs has been demonstrated by MOCVD (metal organic chemical vapor deposition) using mixed-metal organometallic precursors of limited volatility and by MBE (molecular beam epitaxy). Fundamental understanding of these thermodynamically stable compounds has been obtained. Our accomplishments include the studies of the stability, the growth process, the chemical, physical, and electrical properties of metal/GaAs systems.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 1028 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.