Download or read book Optoelectronic Properties of Aluminum Gallium Nitride written by Erik Laker Waldron and published by . This book was released on 2003 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Download or read book Electrical and Optoelectronic Properties of Gallium Nitride written by Lorraine Barbara Flannery and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optoelectronic Properties of Gallium Nitride written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical and Optical Characteristics of Gallium Nitride and aluminum Gallium Nitride gallium Nitride Superlattices with Enhanced P type Doping Properties written by Ian Drew Goepfert and published by . This book was released on 2000 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigations of the Gallium Nitride Aluminum Nitride and Indium Nitride Semiconductors Structural Optical Electronic and Interfacial Properties written by Samuel Clagett Strite (III) and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Described in this thesis is an investigation of some fundamental physical properties of both zincblende and wurtzite Group III - Nitride wide bandgap semiconductor materials. All of the thin films studied were grown by plasma-enhanced molecular beam epitaxy on either GaAs and SiC substrates. This growth method proved to be suitable for nitride expitaxial growth although compromises between the plasma power and the crystal growth rate had to be sought. The zincblende polytypes of GaN and InN were studied with the intent of evaluating their potential as a wide bandgap semiconductor system for short wavelength optical devices. The metastability of these crystals has led us to the conclusion that the zincblende nitrides are not a promising candidate for these applications due to their tendency to nucleate wurtzite domains. Bulk samples of zincblende GaN and InN and wurtzite GaN, AlN and InN were studied by x-ray photoemission spectroscopy (XPS) in an effort to determine their valence band structure. We report the various energies of the valence band density of states maxima as well as the ionicity gaps of each material. Wurtzite GaN/AlN and InN/AlN heterostructures were also investigated by XPS in order to estimate the valence band discontinuities of these heterojunctions. We measured valence band discontinuities of $Delta$E$rmsbsp{v}{GaN/AlN}$ = 0.4 $pm$ 0.4 eV and $Delta$E$rmsbsp{v}{InN/AlN}$ = 1.1 $pm$ 0.4 eV. Our results indicate that both systems have heterojunction band lineups fundamentally suitable for common optical device applications.
Download or read book Gallium Nitride Processing for Electronics Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-07-06 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Download or read book Properties of Aluminium Gallium Arsenide written by Sadao Adachi and published by IET. This book was released on 1993 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
Download or read book Ohmic Metallizations to Aluminum Gallium Nitride gallium Nitride High Electron Mobility Transistors Electrical and Microstructural Studies written by and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties Processing and Applications of Gallium Nitride and Related Semiconductors written by James H. Edgar and published by Institution of Electrical Engineers. This book was released on 1999 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices.
Download or read book The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride Gallium Nitride Heterostructures written by John W. McClory and published by . This book was released on 2008 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) were irradiated at low temperature and the temperature dependent changes to drain current, gate current, capacitance, and transconductance were measured. The results were compared to the charge control model of the drain current and trap-assisted tunneling model of the gate current to determine the source of the radiation-induced changes. AlGaN/GaN HFETs demonstrated threshold voltage shifts and drain current changes after irradiation. After electron and neutron irradiation applied at ~80 K, measurement of the drain current at this temperature showed an increase that saturated after 10^13 electrons/cm^2 or 10^10 neutrons/cm^2 due to positive charge build-up in the AlGaN layer. Measurement at room temperature after low-temperature irradiation showed a decrease in drain current due to the build up of charged defects along the AlGaN-GaN interface that decrease the mobility in the 2DEG and hence decrease the current. Gate leakage currents increased after low temperature irradiation and the increase was persistent after room temperature annealing. The increased leakage current was attributed to trap-assisted tunneling after application of the trap-assisted tunneling model. Comparison of the model to post-irradiation vs. pre-irradiation data showed that the dominant parameter change causing increased gate current was an increase in trap concentration.
Download or read book Deep Level Defects in Electron irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy written by Michael R. Hogsed and published by . This book was released on 2005 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Nitride based Electronic and Optoelectronic Devices written by Li Wang and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: For the past decade, Gallium nitride (GaN) material system has earned a significant place in modern power electronic and optoelectronic devices due to its outstanding electric and optical properties. GaN-based device technologies have improved substantially, and are still investigated intensely for advanced performance. The GaN-based devices studied in this dissertation involve Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs) on the electronic side and light emitting diodes (LEDs) on the optoelectronic side.In the SBDs part, GaN SBDs with high voltage blocking capability and low on-state voltage on inductively coupled plasma (ICP) etched commercial LED epi-wafers are studied. Their applications in alternating current (AC) LEDs are demonstrated. It is revealed that the potassium hydroxide (KOH) pretreatment with optimized concentration could eliminate the leakage current due to the reduction of the ICP induced surface defects. Moreover, the numerical values of the surface defect density are extracted by analyzing the leakage current mechanism. In the HEMTs part, the transfer saturation feature of GaN-based HEMTs is investigated firstly. It is observed that the drain current in HEMTs with short gate length becomes saturation as gate bias approaches zero. The theoretical analysis based on a simple series resistance model reveals this saturation feature results from the fact that the total source-drain resistance is independent on gate bias in a short gate length HMET. This conclusion is further verified by device simulation study. Secondly, novel GaN double-gate (DG) HEMTs featuring enhanced back gate-control of the two dimensional electron gas (2DEG) in AlGaN/GaN heterostructures is designed and modeled. The results indicate that the DG GaN-HEMTs can provide a higher maixmum transconductance gain and better immunity of the short channel effects than traditional single-gate HEMTs. At last, the temperature-dependent electrical characteristics of GaN-based HEMTs from room temperature down to 50K are studied. It is observed that the drain saturation current and transconductance increase with the decrease of the temperature. In the LEDs part, quantum dots (QDs) coupled non-resonant microcavity light emitting diodes (LEDs) with micro-holes is designed and demonstrated to enhance non-radiative energy transfer between InGaN/GaN quantum wells (QWs) and QDs for the first time by tailoring the radiative relaxation lifetime of excitations in QWs. The blue emission from the InGaN/GaN QWs is detuned from the resonant modes of the microcavity to extend the radiative recombination lifetime in QWs. The direct contact of QDs and the QWs active layer is achieved by depositing QDs into the micro-holes on the LEDs. This non-resonant microcavity structure leads to a 3.2 times enhancement of the effective quantum efficiency of QDs in microcavity LEDs than the LEDs without microcavity structure.
Download or read book Charge Instability and Localization in Aluminum Gallium Nitride gallium Nitride Heterostructures and Heterostructure Field Effect Transistors Studied by Kelvin Probe Microscopy written by Goutam Koley and published by . This book was released on 2003 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Aluminum Gallium Nitride Nanostructures for High Efficiency Ultraviolet Light Sources written by Xianhe Liu and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: "To date, it has remained difficult to realize efficient deep ultraviolet (UV) light emitting devices. The underlying challenges include presence of dislocations and defects, inefficient doping for Al-rich AlGaN, and poor light extraction efficiency (LEE) due to in-plane transverse magnetic polarized emission. In this thesis, we have investigated molecular beam epitaxial growth and characterization of AlGaN nanostructures, as well as applications in UV LEDs and lasers, in order to address the performance bottleneck of conventional AlGaN-based planar deep ultraviolet (UV) light emitting devices. We firstly performed a systematic study on the molecular beam epitaxial growth and charge carrier transport properties of Mg-doped AlGaN with ~60% Al composition. High hole concentration of 8.7©71017 cm-3 and mobility values between 10 and 17 cm2/(V℗ʺs) were achieved at room temperature. Under optimal condition, a resistivity of 0.7 Î♭℗ʺcm was obtained. The conduction mechanism is identified to be hole conduction in the Mg impurity band. We also studied the improvement of LEE for transverse-magnetic (TM) polarized emission by using nanowire photonic crystals. By coupling in-plane TM-polarized emission to vertical emission at [GAMMA] point, LEE can be in principle enhanced to over 90% from below 10% in the conventional planar structure. Further considering the absorption in p-AlGaN contact layer and p-metal contact grid, LEE over 30% was predicted. To demonstrate the feasibility of nanowire photonic crystal, we developed the process of selective area epitaxy (SAE) of AlGaN nanowire and further demonstrate an LED at 279 nm. Regular and uniform AlGaN nanowire arrays with precisely controlled diameter and spacing were realized in the full compositional range. An IQE of 45% at room temperature was estimated with the presence of Al-rich shell suppressing surface nonradiative recombination. Excellent electrical and optical performance were achieved, including a small turn-on voltage of 4.4 V and an output power of ~0.93 W/cm2 at a current density of 252 A/cm2. We further studied AlN nanowall LEDs, which can exhibit IQE of ~ 60% at room-temperature, a low turn-on voltage of 7 V and higher current densities > 170 A/cm2 at 12 V. We have also demonstrated electrically pumped AlGaN nanowire lasers operating at 334 nm. Due to defect-free material quality, Anderson localization of light, and Al-rich shell structure, the optical loss and absorption were minimized and the differential gain was maximized, which resulted in ultralow threshold lasing of only a few tens of A/cm2. The studies in this thesis have revealed the advantages of molecular beam epitaxy (MBE) grown AlGaN nanostructures in addressing the current challenges with deep UV optoelectronic devices. Future research on the AlGaN nanostructures is finally proposed." --
Download or read book Optoelectronic Devices III Nitrides written by Mohamed Henini and published by Elsevier. This book was released on 2004-12-17 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Download or read book Fabrication Performance and Degradation Mechanism of Aluminium i e Aluminum Gallium Nitride gallium Nitride Heterostructure Field Effect Transistors written by Hyungtak Kim and published by . This book was released on 2003 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:
