Download or read book Optical and Morphological Studies of the Si SiO2 Interface written by Qian Liu and published by . This book was released on 1995 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 3 1996 written by Hisham Z. Massoud and published by . This book was released on 1996 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Physics of SiO2 and Its Interfaces written by Sokrates T. Pantelides and published by Elsevier. This book was released on 2013-09-17 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field-dependent hole and exciton transport in SiO2 and electron emission from SiO2 into vacuum. The publication takes a look at the electronic structures of crystalline and amorphous SiO2; band structures and electronic properties of SiO2; and optical absorption spectrum of SiO2. The text also tackles chemical bond and related properties of SiO2; topological effects on the band structure of silica; and properties of localized SiO2 clusters in layers of disordered silicon on silver. The selection is a good reference for physicists and readers interested in the physics of silicon dioxide.
Download or read book Nonlinear and Linear Optical Studies of Si SiO2 Interfaces written by Cornelis Wilhelmus Van Hasselt and published by . This book was released on 1997* with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zsfassung in niederländ. Sprache.
Download or read book Optical Properties of Si SiO2 Interfaces by Linear and Nonlinear Optical Techniques written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this research is to understand the physics of (001)Si-SiO data can be realized by the SBHM. From the SHG analysis we find effective angles of incidence and observation of about 12°, indicating that the SHG intensity originates at the Si side of the interface. This work further demonstrates the advantages of SBHM for interpreting SHG data with respect to conventional approaches. By expressing nonlinear polarizations in terms of complex hyperpolarizabilities associated with each of bonds in a unit cell, the description is not only much simpler but also provides more physical information and insight that can otherwise be obtained on a microscopic scale.
Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 4 2000 written by Hisham Z. Massoud and published by . This book was released on 2000 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Physics and Chemistry of Sio2 and the Si Sio2 Interface written by B. E. Deal and published by . This book was released on 2014-01-15 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optical Properties of Si SiO2 Interfaces by Linear and Nonlinear Optical Techniques written by Jih-Fu Trevor Wang and published by . This book was released on 2001 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book SiO2 and Its Interfaces Volume 105 written by S. T. Pantelides and published by Mrs Proceedings. This book was released on 1988-07-21 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book The Si SiO2 System written by P. Balk and published by Elsevier Publishing Company. This book was released on 1988 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.
Download or read book Second Order Non linear Optics of Silicon and Silicon Nanostructures written by O. A. Aktsipetrov and published by CRC Press. This book was released on 2018-09-03 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theory and practice of the non-linear optics of silicon are inextricably linked with a variety of areas of solid state physics, particularly semiconductor physics. However, the current literature linking these fields is scattered across various sources and is lacking in depth. Second Order Non-linear Optics of Silicon and Silicon Nanostructures describes the physical properties of silicon as they apply to non-linear optics while also covering details of the physics of semiconductors. The book contains six chapters that focus on: The physical properties and linear optics of silicon Basic theoretical concepts of reflected second harmonics (RSH) The authors’ theory of the generation of RSH at the non-linear medium–linear medium interface An analytical review of work on the non-linear optics of silicon The results of non-linear optical studies of silicon nanostructures A theory of photoinduced electronic processes in semiconductors and their influence on RSH generation The book also includes methodological problems and a significant amount of reference data. It not only reflects the current state of research but also provides a single, thorough source of introductory information for those who are becoming familiar with non-linear optics. Second Order Non-linear Optics of Silicon and Silicon Nanostructures is a valuable contribution to the fields of non-linear optics, semiconductor physics, and microelectronics, as well as a useful resource for a wide range of readers, from undergraduates to researchers.
Download or read book Nanostructured Materials and Nanotechnology VI Volume 33 Issue 7 written by Sanjay Mathur and published by John Wiley & Sons. This book was released on 2012-11-27 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue features fourteen peer-reviewed papers originating from The 6th International Symposium on Nanostructured Materials and Nanotechnology. It includes Nanostructured coatings by cluster beam deposition; a new greener synthetic route to cadmium/lead selenide and telluride nanoparticles; and much more. Held in January 2012, during the 36th International Conference on Advanced Ceramics and Composites (ICACC), the symposium covered a broad range of issues, including synthesis, processing, modeling, and structure-property correlations in nanomaterials and nanocomposites, enabling scientists, engineers, and technologists from around the world to explore the latest developments in the field.
Download or read book Defects in SiO2 and Related Dielectrics Science and Technology written by Gianfranco Pacchioni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2007 with total page 902 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic Structure of Si SiO2 Interface written by and published by . This book was released on 1997 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: Investigations of the atomic structure of Si-SiO2 interfaces have mostly been performed with high resolution transmission electron microscopy. However, the interpretation of the phase contrast in the amorphous phase at the interface is not unique. The authors investigated the Si-SiO2 interface by studying the ELNES of the O-K edge with the spatial difference technique with a dedicated STEM with 100kV. Also the interface was studied by Z-contrast imaging with a 300 kV dedicated STEM. Silicon wafers (110) were first thermally oxidised to produce a SiO2 layer. The thermally grown oxide was used as a substrate for liquid phase epitaxy of silicon.
Download or read book Investigation of Selective Optical Properties of Si SiO2 Nanostructures Generated by Pulsed Laser Ablation As deposited and Post treated written by Meisam Moghareh Abed and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon and its derivatives like SiO2 are essential materials for industrial applications such as semiconductors, optoelectronics, and telecommunication. Optical properties of a large group of silicon/silica nanofibrous thin films are studied. A picosecond pulse laser was employed for indirect deposition of ablated silicon on glass substrates. Prominent parameters such as laser power, repetition rate, pulse duration, and scanning speed were changed to vary the structural and compositional properties of synthesized nanofibrous thin films. Transmission and specular reflection measurements along with material characterization techniques, Raman, FTIR XPS, and XRD were employed for better interpretation of the results. Three studies are included in this research. First, exploration of the effect of manufacturing parameters as frequency, power, pulse duration and scanning speed on optical properties of samples generated. By and large, an increase in the values for repetition rate and scanning speed produces a corresponding increase in optical data intensity, while an increase in power and pulse duration leads to a drop in the spectra. The results show that the degree of oxidation and the inherent porous structure is driving the light interaction in thin samples, as indicated by the changes in intensity or spectrum shape. The second study looks into the influence of post heat treatment on the optical properties of samples prepared by frequency variation. Samples were heated up to 400°C and 1000°C and cooled down to room temperature for measurements. The inverse relationship of annealing temperatures on Vis-range reflection spectra to increase and decrease the intensity was confirmed. These improvements are attributed to crystalline and amorphous lattice structures and elemental composition. The third study focuses on the emission of a heated sample, to 200°C and 350°C while data is collected at the elevated temperatures. Results show the emission amplifying effect of nanofibrous structure and its density as well as oxidation level at NIR (Near Infra-Red) range reflection.
