Download or read book Optical and Electrical Study of the Rare Earth Doped III nitride Semiconductor Materials written by Jingzhou Wang and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rare Earth Doped III Nitrides for Optoelectronic and Spintronic Applications written by Kevin Peter O'Donnell and published by Springer Science & Business Media. This book was released on 2010-06-28 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
Download or read book Experimental and Theoretical Studies of Rare Earth Doped III nitride Semiconductor Properties written by Iman S. Roqan and published by . This book was released on 2008 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rare Earth Doped III Nitrides for Optoelectronic and Spintronic Applications written by Kevin Peter O'Donnell and published by Springer. This book was released on 2010-07-27 with total page 355 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
Download or read book Rare Earth and Transition Metal Doping of Semiconductor Materials written by Volkmar Dierolf and published by Woodhead Publishing. This book was released on 2016-01-23 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics Details the properties of semiconductors for spintronics
Download or read book Rare Earth Doped III nitride Semiconductors for Display Applications and Optical Communications written by Ei Ei Nyein and published by . This book was released on 2005 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Nitride Semiconductors and Devices GaN based Optical and Electronic Devices written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 902 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 3 deals with nitride semiconductor devices and device technology. Among the application areas that feature prominently here are LEDs, lasers, FETs and HBTs, detectors and unique issues surrounding solar blind detection.
Download or read book III V Nitride Semiconductors written by Edward T. Yu and published by CRC Press. This book was released on 2022-10-30 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
Download or read book Oxide and Nitride Semiconductors written by Takafumi Yao and published by Springer Science & Business Media. This book was released on 2009-03-20 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN.
Download or read book Dilute III V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer Science & Business Media. This book was released on 2008-01-12 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Download or read book Rare Earth Doped Semiconductors II Volume 422 written by S. Coffa and published by . This book was released on 1996 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
Download or read book Handbook of Nitride Semiconductors and Devices Electronic and Optical Processes in Nitrides written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 883 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.
Download or read book Spectroscopy and Device Performance of Rare Earth Doped III Nitrides written by and published by . This book was released on 2002 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt: The recent demonstration of visible thin-film electroluminescence (TFEL) devices based on rare earth doped GaN has spurred great interest in this class of materials for possible applications in full color displays. Prime candidates for redgreen- blue (RGB) emission are the rare earth ions Eu3+ (red), Er3+ (green), and Tm3+ (blue). A full-color TFEL phosphor system based on RE doped GaN has been demonstrated with high brightness (500-1000 cd/m2) under direct current operation of GaN: Er films on Si and sapphire substrates. The recent results on RE doped GaN have shown that these materials are promising for electroluminescent devices operating at room temperature. However, the initial results also indicated that more fundamental studies on the incorporation and excitation mechanisms of RE ions in III-nitrides are necessary to optimize their device performance. In this final report, spectroscopic results focusing on the infrared and visible emission from Er3+ in GaN are presented. The results include a comparison of the optical properties of in -situ Er doped GaN prepared by metalorganic MBE and solid-source MBE. In addition, detailed spectroscopic studies on Er doped GaN prepared by SSMBE as a function of excitation wavelengths, temperature, and pump power are discussed. Finally, initial result on the optical properties of Eu doped GaN are summarized.
Download or read book Rare Earth Doping of Advanced Materials for Photonic Applications 2011 Volume 1342 written by Volkmar Dierolf and published by Materials Research Society. This book was released on 2011-11-28 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Symposium V, "Rare-Earth Doping of Advanced Materials for Photonic Applications," took place during the 2011 Spring Meeting of the Materials Research Society in San Francisco, California, April 25−29, 2011. It brought together researchers from a number of fields that traditionally do not interact closely with each other and provided the semiconductor, phosphors and device communities with a unique opportunity to discuss fundamental topics of common interest that underlie the emission in rare-earth-doped materials. Such a mix of different research topics, silicon photonics, phosphors, oxides, and wide band gap materials including III-nitride semiconductors, to name a few, greatly promotes a healthy and vigorous exchange of ideas. The goal of this symposium was to highlight the status of light emission at infrared and visible wavelengths from rare-earth-doped phosphors as well as semiconductors. Issues of rare-earth-materials applications for green technologies, sustainability and opportunities for development of multifunctional devices utilizing magnetic, electric and pressure stimuli were also addressed.
Download or read book Rare Earth Doping of Advanced Materials for Photonic Applications Volume 1111 written by V. Dierolf and published by . This book was released on 2009-09-09 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Dilute III V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer. This book was released on 2009-09-02 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Download or read book Handbook of Nitride Semiconductors and Devices written by Hadis Morkoç and published by . This book was released on 2009-01 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with a clarity and depth not found elsewhere. The handbooks present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. They also deal with the properties and processes for thermal, optical (3-, 2-, 1-, 0-dimensional systems), electrical (at low- and high-electric fields, low- and high-magnetic fields for 3- and 2-dimensional systems), magnetism and magnetic properties (in dilute magnetic ion doped compounds) and spin-based device concepts. The associated measurement methods for each material deposition are discussed. The present volume 3 deals with nitride semiconductor devices and device technology. Among the applications areas that feature prominently are LEDs, lasers (including recording), FETs and HBTs (including novel treatment of fundamentals and hot phonon processes affecting the velocity), detectors and unique issues surrounding solar blind detection. This comprehensive handbook provides all interested researchers and engineers with an accessible treatment of this important class of materials.
