Download or read book Optical Absorption and Photoluminescence of Doped GaAs and InxGa1 x As written by Chung Mou Chang and published by . This book was released on 1964 with total page 51 pages. Available in PDF, EPUB and Kindle. Book excerpt: Absorption coefficients near the fundamental absorption edge have been measured in P-type and N-type GaAs with various doping concentrations. With the aid of the principle of detail balance, these measurements were used to predict the spectra of spontaneous emissions under small excitations, and actual photoluminescence spectra were found to follow the predicted spectra closely. The photoluminescence spectra of Mndoped GaAs at several different temperatures were studied. Indium was diffused into doped GaAs to modify the band-gap energy. The photoluminescence spectra and absorption coefficients of the diffused layers were measured. The photoluminescence of the diffused layer was found to be shifted in wavelength by an amount consistent with the indium surface concentration. (Author).

Download or read book Optical Absorption and Photoluminescence of Doped GaAs and In xGa l x As d GaAs and In xGa l x As written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1964 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical Absorption and Photoluminescence of Doped GaAs and In subscript X Ga1 subscript X As written by Chung-mou Chang and published by . This book was released on 1964 with total page 51 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book National Union Catalog written by and published by . This book was released on 1970 with total page 622 pages. Available in PDF, EPUB and Kindle. Book excerpt: Includes entries for maps and atlases.

Download or read book Investigation of Intersubband Optical Absorption in Heavily Doped N type GaAs Al0 3Ga0 7As Multiple Quantum Wells written by Xiqi Tang and published by . This book was released on 1994 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Quantum Efficiency and Radiative Lifetime in P type GaAs written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1964 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: A method to measure the quantum efficiency of radiative recombination in uniformly doped ptype gallium arsenide and to study the radiative lifetime has been developed. The method involves measurement of the efficiency (photon yield) of photoluminescence, separation of surface recombination from bulk recombination by varying the absorption length of the excitation light, measurement of electron-diffusion length by the spectral dependence of surface photovoltage and also by the absorption-length dependence of photoluminescence, and a theoretical estimate of the electron mobility. The photon yield was determined from measurement of the relative intensities of the excitation light beam and the photoluminescence beam radiated into a known solid angle, using a calculated correction for refraction and reflection losses involved in the escape of luminescence from the sample. (Author).

Download or read book Metals Abstracts written by and published by . This book was released on 1977 with total page 992 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescent Properties of GaAs 1 x P x Implanted with Nitrogen and Neon written by Richard Ernest Anderson and published by . This book was released on 1974 with total page 163 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low temperature photoluminescence from GaAs(1-x)P(x) crystals implanted with nitrogen and neon has been studied. The implanted nitrogen produced photoluminescence spectra confirming the presence of the nitrogen isoelectronic trap after appropriate annealing. Implanted neon did not produce luminescent centers. Both nitrogen and neon implantations introduced lattice damage which severely degraded photoluminescence efficiencies prior to annealing. High temperature annealing was required to remove the effects of the implantation damage and produce optical activity of the implanted nitrogen atoms. In crystals with compositions in the direct bandgap region, certain implanted nitrogen concentrations produced more efficient luminescence than nonimplanted, N-free crystals. In addition, nitrogen concentrations greater than solid solubility were realized, as determined by the spectral characteristics of the photoluminescence. In crystals with indirect bandgap compositions, luminescence from nitrogen implanted crystals compared favorably in intensity with crystals doped conventionally with nitrogen.

Download or read book Novel Features of Photoluminescence Spectra from Acceptor doped GaAs written by Yunosuke Makita and published by . This book was released on 1996 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book III Nitride Based Semiconductor Electronics and Optical Devices and Thirty Fourth State of the Art Program on Compound Semiconductors SOTAPOCS XXXIV written by F. Ren and published by The Electrochemical Society. This book was released on 2001 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Spectroscopy of Semiconductor Microstructures written by Gerhard Fasol and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 661 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of a NATO ARW held in Venice, Italy, May 9-13, 1989

Download or read book Metals Abstracts Index written by and published by . This book was released on 1978 with total page 1010 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Preparation and Properties of InxGa1 xAs with Application to Electroluminescent Devices written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1971 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1989 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Alloys Index written by and published by . This book was released on 1975 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt: