Download or read book Operation and Modeling of the MOS Transistor written by Yannis Tsividis and published by . This book was released on 2011 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MOS (Metal Oxide Semiconductor) transistor is the most important building block of modern silicon integrated circuits. This book fills an important gap in the literature by presenting a unified treatment of the operation and modeling of the MOS transistor that is complemented withextensive intuitive discussions.The MOS transistor is the dominant VLSI (Very Large Scale Integration) device, and understanding of this device is mandatory for those people planning a career in device physics and modeling as well as in circuit design. Especially important for university courses,there is a logical, systematic and progressive description that starts with semiconductor fundamentals and builds up to a comprehensive understanding of the basics of MOS transistors. For practicing professionals there are details of nuances observed in MOS transistor behavior, and variousapproaches to modeling these are presented. Detailed derivations are given for modeling dc currents, charges for large-signal operation, small-signal operation at low frequencies and high frequencies, and noise.

Download or read book Classical and Object oriented Software Engineering with UML and C written by Stephen R. Schach and published by McGraw-Hill Companies. This book was released on 1999 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Universal Modeling Language (UML) has become an industry standard in software engineering. In this text, it is used for object-oriented analysis and design as well as when diagrams depict objects and their interrelationships.

Download or read book Operation and Modeling of the MOS Transistor written by Yannis Tsividis and published by Oxford University Press, USA. This book was released on 1999 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt: Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips. KEY FEATURES .Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise. .Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications. .New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them. .Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided."

Download or read book Instructor s Solution Manaul for Operation and Modeling of the Mo 3rd Ed written by Charles Batchelor Professor of Electrical Engineering Yannis Tsividis and published by . This book was released on 2010-12-14 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Operation and Modeling of the MOS Transistor written by Yannis Tsividis and published by OUP USA. This book was released on 2013-03-14 with total page 736 pages. Available in PDF, EPUB and Kindle. Book excerpt: Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor—the key element of modern microelectronic chips.

Download or read book Charge Based MOS Transistor Modeling written by Christian C. Enz and published by John Wiley & Sons. This book was released on 2006-08-14 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.

Download or read book Operation and Modeling of the MOS Transistor Solution Manual written by Yannis Tsividis and published by . This book was released on 2012-08-23 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Solutions Manual to Accompany Tsividis written by Mehran Bagheri and published by . This book was released on 1987 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Mosfet Modeling For Vlsi Simulation Theory And Practice written by Narain Arora and published by World Scientific. This book was released on 2007-02-14 with total page 633 pages. Available in PDF, EPUB and Kindle. Book excerpt: A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.

Download or read book Transistor Level Modeling for Analog RF IC Design written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2006-07-01 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.

Download or read book Mosfet Modeling For Circuit Analysis And Design written by Carlos Galup-montoro and published by World Scientific. This book was released on 2007-02-27 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.

Download or read book Understanding Digital Signal Processing written by Richard G. Lyons and published by Pearson Education. This book was released on 2010-11-01 with total page 1227 pages. Available in PDF, EPUB and Kindle. Book excerpt: Amazon.com’s Top-Selling DSP Book for Seven Straight Years—Now Fully Updated! Understanding Digital Signal Processing, Third Edition, is quite simply the best resource for engineers and other technical professionals who want to master and apply today’s latest DSP techniques. Richard G. Lyons has updated and expanded his best-selling second edition to reflect the newest technologies, building on the exceptionally readable coverage that made it the favorite of DSP professionals worldwide. He has also added hands-on problems to every chapter, giving students even more of the practical experience they need to succeed. Comprehensive in scope and clear in approach, this book achieves the perfect balance between theory and practice, keeps math at a tolerable level, and makes DSP exceptionally accessible to beginners without ever oversimplifying it. Readers can thoroughly grasp the basics and quickly move on to more sophisticated techniques. This edition adds extensive new coverage of FIR and IIR filter analysis techniques, digital differentiators, integrators, and matched filters. Lyons has significantly updated and expanded his discussions of multirate processing techniques, which are crucial to modern wireless and satellite communications. He also presents nearly twice as many DSP Tricks as in the second edition—including techniques even seasoned DSP professionals may have overlooked. Coverage includes New homework problems that deepen your understanding and help you apply what you’ve learned Practical, day-to-day DSP implementations and problem-solving throughout Useful new guidance on generalized digital networks, including discrete differentiators, integrators, and matched filters Clear descriptions of statistical measures of signals, variance reduction by averaging, and real-world signal-to-noise ratio (SNR) computation A significantly expanded chapter on sample rate conversion (multirate systems) and associated filtering techniques New guidance on implementing fast convolution, IIR filter scaling, and more Enhanced coverage of analyzing digital filter behavior and performance for diverse communications and biomedical applications Discrete sequences/systems, periodic sampling, DFT, FFT, finite/infinite impulse response filters, quadrature (I/Q) processing, discrete Hilbert transforms, binary number formats, and much more

Download or read book CMOS Analog Design Using All Region MOSFET Modeling written by Márcio Cherem Schneider and published by Cambridge University Press. This book was released on 2010-01-28 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The essentials of analog circuit design with a unique all-region MOSFET modeling approach.

Download or read book MOSFET Models for VLSI Circuit Simulation written by Narain D. Arora and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.

Download or read book Fundamentals of Modern VLSI Devices written by Yuan Taur and published by Cambridge University Press. This book was released on 2013-05-02 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.

Download or read book Technology Computer Aided Design written by Chandan Kumar Sarkar and published by CRC Press. This book was released on 2018-09-03 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.

Download or read book Advanced MOS Device Physics written by Norman Einspruch and published by Elsevier. This book was released on 2012-12-02 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.