Download or read book On the perspectives of SiC MOSFETs in high frequency and high power isolated DC DC converters written by Eial Awwad, Abdullah and published by Universitätsverlag der TU Berlin. This book was released on 2020-08-11 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: Increasing demand for efficiency and power density pushes Si-based devices to some of their inherent material limits, including those related to temperature operation, switching frequency, and blocking voltage. Recently, SiC-based power devices are promising candidates for high-power and high-frequency switching applications. Today, SiC MOSFETs are commercially available from several manufacturers. Although technology affiliated with SiC MOSFETs is improving rapidly, many challenges remain, and some of them are investigated in this work. The research work in this dissertation is divided into the three following parts. Firstly, the static and switching characteristics of the state-of-the-art 1.2 kV planar and double-trench SiC MOSFETs from two different manufacturers are evaluated. The effects of different biasing voltages, DC link voltages, and temperatures are analysed. The characterisation results show that the devices exhibit superior switching performances under different operating conditions. Moreover, several aspects of using the SiC MOSFET’s body diode in a DC/DC converter are investigated, comparing the body-diodes of planar and double-trench devices. Reverse recovery is evaluated in switching tests considering the case temperature, switching rate, forward current, and applied voltage. Based on the measurement results, the junction temperature is estimated to guarantee safe operation. A simple electro-thermal model is proposed in order to estimate the maximum allowed switching frequency based on the thermal design of the SiC devices. Using these results, hard- and soft-switching converters are designed, and devices are characterised as being in continuous operation at a very high switching frequency of 1 MHz. Thereafter, the SiC MOSFETs are operated in a continuous mode in a 10 kW / 100-250 kHz buck converter, comparing synchronous rectification, the use of the body diode, and the use of an external Schottky diode. Further, the parallel operation of the planar devices is considered. Thus, the paralleling of SiC MOSFETs is investigated before comparing the devices in continuous converter operation. In this regard, the impact of the most common mismatch parameters on the static and dynamic current sharing of the transistors is evaluated, showing that paralleling of SiC MOSFETs is feasible. Subsequently, an analytical model of SiC MOSFETs for switching loss optimisation is proposed. The analytical model exhibits relatively close agreement with measurement results under different test conditions. The proposed model tracks the oscillation effectively during both turn-on and –off transitions. This has been achieved by considering the influence of the most crucial parasitic elements in both power and gate loops. In the second part, a comprehensive short-circuit ruggedness evaluation focusing on different failure modes of the planar and double-trench SiC devices is presented. The effects of different biasing voltages, DC link voltages, and gate resistances are evaluated. Additionally, the temperature-dependence of the short-circuit capability is evaluated, and the associated failure modes are analysed. Subsequently, the design and test of two different methods for overcurrent protection are proposed. The desaturation technique is applied to the SiC MOSFETs and compared to a second method that depends on the stray inductance of the devices. Finally, the benefits of using SiC devices in continuous high-frequency, high-power DC/DC converters is experimentally evaluated. In this regard, a design optimisation of a high-frequency transformer is introduced, and the impact of different core materials, conductor designs, and winding arrangements are evaluated. A ZVZCS Phase-Shift Full-Bridge unidirectional DC/DC converter is proposed, using only the parasitic leakage inductance of the transformer. Experimental results for a 10 kW, (100-250) kHz prototype indicate an efficiency of up to 98.1% for the whole converter. Furthermore, an optimized control method is proposed to minimise the circulation current in the isolated bidirectional dual active bridge DC/DC converter, based on a modified dual-phase-shift control method. This control method is also experimentally compared with traditional single-phase shift control, yielding a significant improvement in efficiency. The experimental results confirm the theoretical analysis and show that the proposed control can enhance the overall converter efficiency and expand the ZVZCS range. Die steigende Nachfrage nach Effizienz und Leistungsdichte bringt Si-basierte eistungsbauteile an einige inhärente Materialgrenzen, die unter anderem mit der Temperaturbelastung, der Schaltfrequenz und der Blockierspannung in Zusammenhang stehen. In jüngster Zeit sind SiC-basierte Leistungsbauelemente vielversprechende Kandidaten für Hochleistungs- und Hochfrequenzanwendungen. Aktuell sind SiC-MOSFETs von mehreren Herstellern im Handel erhältlich. Obwohl sich die Technologie der SiC-MOSFETs rasch verbessert, werden viele Herausforderungen bestehen bleiben. Einige dieser Herausforderungen werden in dieser Arbeit untersucht. Die Untersuchungen in dieser Dissertation gliedern sich in die drei folgenden Teile: Im ersten Teil erfolgt, die statische und die transiente Charakterisierung der aktuellen 1,2 kV Planarund Doubletrench SiC-MOSFETs verschiedener Hersteller. Die Auswirkungen unterschiedlicher Gatespannungen, Zwischenkreisspannungen und Temperaturen werden analysiert. Die Ergebnisse der Charakterisierung zeigen, dass die Bauteile überlegene Schaltleistungen unter verschiedenen Betriebsbedingungen aufweisen. Darüber hinaus wird der Einsatz der internen SiC-Bodydioden in einem DC/DC-Wandler untersucht, wobei die Unterschiede zwischen Planar- und Doppeltrench-Bauteilen aufgezeigt werden. Das Reverse-Recovery-Verhalten wird unter Berücksichtigung der Gehäusetemperatur, der Schaltgeschwindigkeit, des Durchlassstroms und der angelegten Spannung bewertet. Anhand der Messergebnisse wird die Sperrschichttemperatur geschätzt, damit ein sicherer Betrieb gewährleistet ist. Ein einfaches elektrothermisches Modell wird vorgestellt, um die maximal zulässige Schaltfrequenz auf der Grundlage des thermischen Designs der SiC-Bauteile abzuschätzen. Anhand dieser Ergebnisse werden hart- und weichschaltende Umrichter konzipiert und die Bauteile werden im Dauerbetrieb mit einer sehr hohen Schaltfrequenz von 1 MHz untersucht. Danach werden die SiC-MOSFETs im Dauerbetrieb in einem 10 kW / 100-250 kHz-Tiefsetzsteller betrieben. Dabei wird die Synchrongleichrichtung, die Verwendung der internen Diode und die Verwendung einer externen Schottky-Diode verglichen. Außerdem wird die Parallelisierung von SiC-MOSFETs untersucht, bevor die Parallelschaltung der verschiedenen Bauelemente ebenso im kontinuierlichen Konverterbetrieb verglichen wird. Es wird der Einfluss der häufigsten Parametervariationen auf die statische und dynamische Stromaufteilung der Transistoren analysiert, was zeigt, dass eine Parallelisierung von SiC-MOSFETs möglich ist. Anschließend wird ein analytisches Modell der SiC-MOSFETs zur Schaltverlustoptimierung vorgeschlagen. Das analytische Modell zeigt eine relativ enge Übereinstimmung mit den Messergebnissen unter verschiedenen Testbedingungen. Das vorgeschlagene Modell bildet die Schwingungen sowohl beim Ein- als auch beim Ausschalten effektiv nach. Dies wurde durch die Berücksichtigung der wichtigsten parasitären Elemente in Strom- und Gatekreisen erreicht. Im zweiten Teil wird eine umfassende Bewertung der Kurzschlussfestigkeit mit Fokus auf verschiedene Ausfallmodi der planaren und double-trench SiC-Bauelemente vorgestellt. Die Auswirkungen unterschiedlicher Gatespannungen, Zwischenkreisspannungen und Gate-Widerstände werden ausgewertet. Zusätzlich wird die temperaturabhängige Kurzschlussfähigkeit ausgewertet und die zugehörigen Fehlerfälle werden analysiert. Anschließend wird die Auslegung und Prüfung von zwei verschiedenen Verfahren zum Überstromschutz evaluiert. Die „Desaturation“-Technik wird auf SiC-MOSFETs angewendet und mit einer zweiten Methode verglichen, welche die parasitäre Induktivität der Bauelemente nutzt. Schließlich wird der Nutzen des Einsatzes von SiC-Bauteilen in kontinuierlichen Hochfrequenz-Hochleistungs-DC/DC-Wandlern experimentell untersucht. In diesem Zusammenhang wird eine Designoptimierung eines Hochfrequenztransformators vorgestellt und der Einfluss verschiedener Kernmaterialien, Leiterausführungen und Wicklungsanordnungen wird bewertet. Es wird ein unidirektionaler ZVZCS Vollbrücken-DC/DC-Wandler vorgestellt, der nur die parasitäre Streuinduktivität des Transformators verwendet. Experimentelle Ergebnisse für einen 10 kW, (100-250) kHz Prototyp zeigen einenWirkungsgrad von bis zu 98,1% für den gesamten Umrichter. Abschließend wird ein optimiertes Regelverfahren verwendet, welches auf einem modifizierten Dual-Phase-Shift-Regelverfahren basiert, um den Kreisstrom im isolierten bidirektionalen Dual-Aktiv-Brücken-DC/DC-Wandler zu minimieren. Diese Regelmethode wird experimentell mit der herkömmlichen Single-Phase-Shift-Regelung verglichen. Hierbei zeigt sich eine deutliche Effizienzsteigerung durch die neue Regelmethode. Die experimentellen Ergebnisse bestätigen die theoretische Analyse und zeigen, dass die vorgeschlagene Regelung den Gesamtwirkungsgrad des Umrichters erhöhen und den ZVZCS-Bereich erweitern kann.
Download or read book On the Perspectives of SiC MOSFETs in High frequency and High power Isolated DC DC Converters written by Abdullah Eial Awwad and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling and control of power converters in weak and unbalanced electric grids written by Just, Hendrik and published by Universitätsverlag der TU Berlin. This book was released on 2021-11-25 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Grid converters increasingly affect power system operation due to the increasing share of renewable energy sources and less conventional power plants. This shift in power generation leads to converter-dominated weak grids, which show critical stability phenomena but also enable converters to contribute to grid stability and voltage support. This thesis presents critical parts of converter controls and describes models to assess their characteristics. These models are used to derive design criteria and dedicated stability analysis methods for grid converter controls. Der steigende Anteil an erneuerbaren Energien in den Energieversorgungsnetzen führt zur Verdrängung konventioneller Kraftwerke. Diese Entwicklung lässt umrichterdominierte und schwache Netzabschnitte entstehen, die kritischen Stabilitätsmechanismen unterliegen, allerdings auch ermöglichen, dass Umrichter aktiv zur Netzstützung und Netzstabilität beitragen können. Die vorliegende Arbeit beschreibt kritische Regelungskomponenten der Umrichter und deren Modellierung. Auf Basis der Modelle werden Auslegungskriterien für die Regelungen abgeleitet und dedizierte Stabilitätsanalysemethoden präsentiert.
Download or read book Detection and characterization of Lithium plating written by Long, Julian and published by Universitätsverlag der TU Berlin. This book was released on 2023-05-31 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lithium plating is not only the most severe ageing mechanism in lithium-ion batteries (LIBs) but also becoming more and more important due the increasing presence of electric vehicles (EVs). In EVs the extreme conditions causing lithium plating, like very high charging currents and low environment temperatures, are much more prevalent than in consumer electronics. Due to the high number of factors that influence the plating process, ranging from the cell geometry to the chemical composition of the electrolyte, a deeper understanding of the plating process is still lacking. Without this knowledge it is hard to design cells in a plating resistant way, or to operate cells under the ideal conditions to minimize plating. This thesis aims at showing different methods to investigate the plating process on three different levels. The first method is on the cell level, investigating the behaviour of the whole cell during plating. It contains the analysis of the voltage and current profiles that show an atypical behaviour during plating. The focus of the analysis is on the current profile of the constant voltage (CV) phase during charging under low temperature conditions leading to plating. This current profile can be fitted with the Johnson-Mehl-Avrami-Kolmogorov (JMAK) function that describes the electrochemical deposition process of a metallic species on a surface. The resulting fitting parameters can be utilized to characterize the plating behaviour of the cell as well as better estimate the amount of plated lithium than commonly used methods. It can also potentially predict the future safety risk due to dendrite formation. In the second part the chemical composition of the surface electrolyte interface (SEI) is investigated using X-ray photoelectron spectroscopy (XPS). The composition as well as the mechanical properties of the SEI are strongly influencing the plating process and preliminary work has shown that plating is also changing the morphology of the SEI and increasing its thickness drastically. Cells under different conditions (plated, charged and discharged) as well as cells of different manufacturers have been probed using XPS. During the measurements an unwanted side effect of the experimental setup was discovered that lead to a migration of lithium to the surface of the sample and was distorting the measurement results. Regardless of the effect, it was possible to see that the SEI can have a very different composition in cells of different manufacturers and that plating not only changes the morphology but also the composition of the SEI. The unwanted side effect could furthermore be utilized to identify samples that were plated recently and could be used in further more controlled experiments to localize lithium depositions on plated samples. In the last part the particle structure of the anode surface of cells of different manufacturers was investigated using a watershed particle detection algorithm on laser scanning microscopy (LSM) images of the anode surfaces. The distributions of the particle sizes have then been compared to the capacity loss in plated cells. It was shown that the capacity loss correlates with parameters extracted from the particle size distributions. It is however necessary to create more data to verify this correlation. In summary this thesis utilized new methods to detect or characterize plating on different levels of magnification, from the cell level to the chemical composition. New approaches were found to predict a cells future plating behaviour, spatially localize plated areas on the anode and design cells in a plating resistant way. Lithium Plating ist nicht nur der Alterungsmechanismus in Lithium-Ionen-Batterien mit dem größten Kapazitätsverlust, sondern wird auch im Zuge der voranschreitenden Elektrifizierung des Personenverkehrs immer wichtiger. In Elektrofahrzeugen finden sich die extremen Zustände, wie niedrige Ladetemperaturen und hohe Ladestrome, unter denen Plating auftritt, deutlich häufiger als in Unterhaltungstechnik. Durch die Vielzahl von Parametern, von der Zellgeometrie bis hin zur Elektrolyzusammensetzung, die Plating beeinflussen, fehlt immer noch ein tieferes Verständnis des Plating-Prozesses. Ohne dieses Wissen ist es schwer, Zellen zu designen, die resistent gegen Plating sind oder Zellen unter optimalen Bedingungen zu betreiben um Plating zu minimieren. Das Ziel dieser Arbeit ist es, verschiedene Methoden aufzuzeigen, die die Untersuchung von Plating auf drei verschiedenen Ebenen ermöglichen. Die erste Methode untersucht das Gesamtverhalten der Zelle auf Zellebene. Hierbei wird das atypische Verhalten der Strom- und Spannunsprofile wahrend des Plating-Vorgangs analysiert. Der Fokus liegt dabei auf der Untersuchung der Konstantstrom-Phase bei niedrigen Temperaturen während der Ladung. Das Stromprofil dieser Phase kann mit der JMAK-Funktion gefittet werden, welche die elektrochemische Abscheidung eines Metalls auf einer Oberfläche beschreibt. Die resultierenden Fitting-Parameter können genutzt werden, um das Plating-Verhalten vorherzusagen und sind gleichzeitig eine bessere Abschätzung fur die Menge an geplatetem Lithium im Vergleich zu gängigen Methoden. Die Ergebnisse konnten außerdem helfen das Sicherheitsrisiko der Zelle bei Dendritenbildung vorherzusagen. Im zweiten Teil wird die chemische Zusammensetzung der SEI mittels XPS untersucht. Die Zusammensetzung, wie auch die mechanischen Eigenschaften der SEI, beeinflussen den Plating-Prozess stark und es wurde in vorhergehenden Arbeiten gezeigt, dass Plating auch die Morphologie und Dicke der SEI drastisch verändern kann. Zellen in verschiedenen Zuständen (geplatet, geladen, entladen), sowie Zellen verschiedener Hersteller wurden mit XPS untersucht. Während der Messungen wurde ein ungewollter Nebeneffekt des Messaufbaus entdeckt, der zu einer Migration von Lithium an die Oberflache der Proben geführt und die Messergebnisse verfälscht hat. Unabhängig von diesem Effekt war es dennoch möglich, zu zeigen, dass die SEI in Zellen verschiedener Hersteller stark unterschiedliche Zusammensetzungen haben kann und dass Plating nicht nur die Morphologie der SEI beeinflusst, sondern auch die chemische Zusammensetzung. Weiterhin konnte der ungewollte Nebeneffekt verwendet werden, um Proben zu identifizieren, die vor kurzem geplatet wurden und konnte in zukünftigen Arbeiten verwendet werden, um lokalisiert Lithium-Ablagerungen auf geplateten Proben zu identifizieren. Im letzten Teil wurde die Partikelstruktur der Anoden von Zellen verschiedener Zellhersteller mit Hilfe einer watershed-Partikeldetektion an LSM-Bildern untersucht. Die Verteilung der Partikelgrößen wurde mit dem Kapazitätsverlust gleicher Zelle durch Plating verglichen. Es wurde gezeigt, dass der Kapazitätsverlust mit Parametern, die aus den Partikelverteilungen extrahiert wurden, korreliert. Ein größerer Datensatz ist jedoch notwendig, um diese Ergebnisse zu validieren. Zusammenfassend hat diese Arbeit verschiedene neue Methoden aufgezeigt, um Plating auf verschiedenen Vergrößerungsebenen zu detektieren und zu charakterisieren. Neue Ansätze wurden gefunden, um das Platingverhalten von Zellen vorherzusagen, lokalisiertes Lithium auf der Oberfläche zu detektieren und Zellen platingresistenter designen zu können.
Download or read book Design and comparison of two brushless DC drives for an electric propulsion system of solar power unmanned aerial vehicles written by Dong, Rong and published by Universitätsverlag der TU Berlin. This book was released on 2020-08-26 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: The electrical propulsion system as the core component of solar-power Unmanned Aerial Vehicles (UAVs) for long duration flight requires high power density and stable drive technology. Brushless DC motors (BLDCM) with high power and torque density and control algorithms suitable for drive system are given preference for the application in UAVs. This dissertation is aimed at designing an improved BLDCM using only 4 interior magnet blocks to realize 8 poles compared to the conventional 8 magnet blocks structure. The performances of both BLDCM designs have been analytically determined and the motor models were verified through finite element software in ANSYS. Design and construction of the demonstrators of BLDCMs with the proposed and the conventional magnet structure have been carried out and a test bench for extensive performance comparison has been set up. Since the proposed magnet structure leads to a particularity of the magnetic circuit, the behavior of absolute and differential synchronous direct and quadrature inductances have been investigated by finite element model analysis and experiments. Efficiency maps were generated and thermal characteristics have been measured to gain a comprehensive understanding of the two motors. To reduce the uncertainty of sensor control for BLDCM, a high speed, good linearity analog isolation circuit to measure the voltages of 270 V DC voltage to realize sensorless control strategy has been designed. The circuit combines a PI controller with fast operational amplifiers with a built-in linearizing feedback photodiode loop of a linear optocoupler. A 3D stator model was built to analyse the mechanical resonance frequencies and possible excitation by the electromagnetic radial force leading to vibration and noise for the proposed and conventional rotor structure. Analytical calculation of natural mode frequencies has also been conducted to compare and validate the accuracy of FEM simulations and impact hammer testing experimental results. Das elektrische Antriebssystem als Kernkomponente von unbemannten Solarflugzeugen (UAVs, Unmanned Aerial Vehicles) für Langzeitflüge erfordert eine hohe Leistungsdichte und robuste Antriebstechnik. Bürstenlose Gleichstrommotoren (BLDCM) mit hoher Leistungs- und Drehmomentdichte sowie dafür angepasste Regelalgorithmen werden daher bevorzugt in UAVs eingesetzt. Diese Dissertation zielt darauf ab, einen verbesserten BLDCM mit nur 4 eingebetteten Magnetblöcken zu entwerfen, um 8 Pole zu realisieren im Vergleich zu der herkömmlichen Struktur mit 8 Magnetblöcken. Das Verhalten beider BLDCM-Designs wurde analytisch ermittelt und die Motormodelle mit Hilfe von Finite-Elemente-Software in ANSYS verifiziert. Design und Konstruktion der Prototypen mit der vorgeschlagenen und der herkömmlichen Magnetstruktur wurden durchgeführt und es wurde ein Prüfstand für einen umfassenden Leistungsvergleich aufgebaut. Da die vorgeschlagene Magnetstruktur zu einem Magnetkreis führt, bei dem die entgegengesetzten Pole keine Spiegelsymmetrie aufweisen, wurden die Längs- und Querinduktivität durch Finite-Elemente-Modellanalyse und Experimente absolut und differentiell untersucht. Weiterhin wurden Wirkungsgradkennfelder erstellt und das thermische Verhalten untersucht, um ein umfassendes Verständnis der beiden Motoren zu erhalten. Um das sensorbedingte Ausfallrisiko zu eliminieren, wurde eine schnelle analoge Isolationsschaltung mit hoher Linearität und Stabilität zur Messung der gepulsten Spannungen bei 270V Gleichspannung entwickelt, um eine sensorlose Steuerungsstrategie zu realisieren. Die Schaltung verwendet einen linearen Optokoppler mit integrierter Rückkopplungsfotodiode, sowie einen PI-Regler mit schnellen Operationsverstärkern im Rückkopplungspfad. Ein 3D-Statormodell wurde erstellt, um die mechanischen Resonanzfrequenzen und die mögliche Anregung durch die elektromagnetische Radialkraft zu analysieren, die zu Vibrationen und Geräuschen bei der vorgeschlagenen und herkömmlichen Rotorstruktur führt. Es wurde auch eine analytische Modalanalyse durchgeführt, um die Genauigkeit von FEM-Simulationen und experimentellen Ergebnissen mit dem Impulshammer zu vergleichen und zu validieren.
Download or read book Vehicle Electrification in Modern Power Grids written by Vitor Monteiro and published by Elsevier. This book was released on 2024-08-01 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vehicle Electrification in Modern Power Grids: Disruptive Perspectives on Power Electronics Technology and Control Challenges collects the newest advances in technology for electric vehicle integration into one practical volume for professionals and advanced researchers. The book not only summarizes and clarifies legislation and grid codes for the area, but also outlines the modeling and analytical techniques needed, including predicting power converter reliability and its remaining useful life. Specializing in microgrid clusters, the book provides advanced power electronics device technology from wide-band-gap (WBG) to DSP-based digital control platforms and new materials for passive filters. Blending cutting-edge research and practical technology, this book provides a centralized resource for advanced researchers and engineers looking to accelerate vehicle electrification in the power grid. Reveals new, disruptive power electronics and modeling technologies to enable EV integration into the grid Collects guidance on mechanisms for digital control for EV charging and modes of operation, from V2G to G2H Provides legislation and grid codes needed by engineers working on vehicle electrification in power grids
Download or read book Advanced Silicon Carbide Devices and Processing written by Stephen Saddow and published by BoD – Books on Demand. This book was released on 2015-09-17 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.
Download or read book Proceedings of SIE 2023 written by Carmine Ciofi and published by Springer Nature. This book was released on 2024-01-04 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book showcases the state of the art in the field of electronics, as presented by researchers and engineers at the 54th Annual Meeting of the Italian Electronics Society (SIE), held in Noto (SR), Italy, on September 6–8, 2023. It covers a broad range of aspects, including: integrated circuits and systems, micro- and nano-electronic devices, microwave electronics, sensors and microsystems, optoelectronics and photonics, power electronics, electronic systems and applications.
Download or read book Megahertz High Voltage Isolated DC DC Converter Based on SiC MOSFETs written by Suxuan Guo and published by . This book was released on 2018 with total page 151 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Evaluation of Silicon Carbide Power MOSFET Short circuit Ruggedness and MMC based High Voltage step down Ratio Dc Dc Conversion written by Diang Xing and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) greater than 1.2 kV are attractive for medium-voltage (MV) power systems. Compared to traditional silicon (Si) based systems, designs utilizing SiC devices have shown improved performance. Due to improvements in SiC technology, there has been a great investment in the research and development of SiC devices, allowing for an increase in marketshare. Today, SiC MOSFETs have already become more readily available from many device manufacturers. The ruggedness of these devices against short-circuit (SC) events is becoming one of the major concerns for market acceptance. During a SC event, the device is stressed simultaneously with high drain-source voltage and high current, leading to adiabatic heating. This could result in device failure, thus compromising system operation. Industry and transportation applications require switching devices to sustain a considerable SC time to ensure reliable protection. Therefore, it is critical to characterize the SiC devices’ SC withstand time (SCWT), SC-induced degradation, and failure mechanisms. As these devices are being applied in MVDC systems, advantages like high power density and efficiency can be achieved. Circuit topologies of isolated high voltage-stepdown ratio dc/dc converters are studied. Among them, the square-wave modular multilevel converter (MMC) based topologies can have high operational flexibility to achieve voltage-step-down and frequency multiplication functions, which have significant implications for designs and applications. In a case study focusing on a 250-kW, 7-kV, MVDC energy storage system designed for improved grid resiliency, comparisons of numerical results are conducted among the MMC-based topologies. A scaled-down 10-kW prototype is presented later. The circuit parameters and failure modes are analyzed, and the design guidelines of the hardware components are introduced. This MV and medium-frequency (MF) converter can achieve 97.55% efficiency at the full load condition. The last part of this dissertation provides conclusions and outlooks for future work.
Download or read book Modeling and Analysis of Power MOSFETs for High Frequency DC DC Converters written by Yali Xiong and published by . This book was released on 2008 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt: Evolutions in integrated circuit technology require the use of a high-frequency synchronous buck converter in order to achieve low cost, low profile, fast transient response and high power density. However, high frequency operation leads to increased power MOSFET switching losses. Optimization of the MOSFETs plays an important role in improving converter performance. This dissertation focuses on revealing the power loss mechanism of power MOSFETs and the relationship between power MOSFET structure and its power loss. The analytical device model, combined with circuit modeling, cannot reveal the relationship between device structure and its power loss due to the highly non-linear characteristics of power MOSFETs. A physically-based mixed device/circuit modeling approach is used to investigate the power losses of the MOSFETs under different operating conditions. The physically based device model, combined with SPICE-like circuit simulation, provides an expeditious and inexpensive way of evaluating and optimizing circuit and device concepts. Unlike analytical or other SPICE models of power MOSFETs, the numerical device model, relying little on approximations or simplifications, faithfully represents the behavior of realistic power MOSFETs. The impact of power MOSFET parameters on efficiency of synchronous buck converters, such as gate charge, on resistance, reverse recovery, is studied in detail in this thesis. The results provide a good indication on how to optimize power MOSFETs used in VRMs. The synchronous rectifier plays an important role in determining the performance of the synchronous buck converter. The reverse recovery of its body diode and the Cdv/dt induced false trigger-on are two major mechanisms that impact SyncFET's performance. This thesis gives a detailed analysis of the SyncFET operation mechanism and provides several techniques to reduce its body-diode influence and suppress its false Cdv/dt trigger-n. This thesis also investigates the influence of several circuit level parameters on the efficiency of the synchronous buck converter, such as input voltage, circuit parasitic inductance, and gate resistance to provide further optimization of synchronous buck converter design.
Download or read book Soft Commutation Isolated DC DC Converters written by Ivo Barbi and published by Springer. This book was released on 2018-08-27 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the operation and analysis of soft-commutated isolated DC–DC converters used in the design of high efficiency and high power density equipment. It explains the basic principles behind first- and second-order circuits with power switches to enable readers to understand the importance of these converters in high efficiency and high power density power supply design for residential, commercial, industrial and medical use as well as in aerospace equipment. With each chapter featuring a different power converter topology, the book covers the most important resonant converters, including series resonant converters; resonant LLC converters; soft commutation pulse width modulation converters; zero voltage switching; and zero current switching. Each topic is presented with full analysis, a showcase of the power stages of the converters, exercises and their solutions as well as simulation results, which mainly focus on the commutation analysis and output characteristic. This book is a valuable source of information for professionals working in power electronics, power conversion and design of high efficiency and high power density DC–DC converters and switch mode power supplies. The book also serves as a point of reference for engineers responsible for development projects and equipment in companies and research centers and a text for advanced students.
Download or read book Medium Voltage Medium Frequency Isolated DC DC Converter Based on 15 KV SiC MOSFETs written by Li Wang and published by . This book was released on 2017 with total page 151 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Active Gate Drivers for High frequency Application of SiC MOSFETs written by Alejandro Paredes Camacho and published by . This book was released on 2020 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt: The trend in the development of power converters is focused on efficient systems with high power density, reliability and low cost. The challenges to cover the new power converters requirements are mainly concentered on the use of new switching-device technologies such as silicon carbide MOSFETs (SiC). SiC MOSFETs have better characteristics than their silicon counterparts; they have low conduction resistance, can work at higher switching speeds and can operate at higher temperature and voltage levels. Despite the advantages of SiC transistors, operating at high switching frequencies, with these devices, reveal new challenges. The fast switching speeds of SiC MOSFETs can cause over-voltages and over-currents that lead to electromagnetic interference (EMI) problems.For this reason, gate drivers (GD) development is a fundamental stage in SiC MOSFETs circuitry design. The reduction of the problems at high switching frequencies, thus increasing their performance, will allow to take advantage of these devices and achieve more efficient and high power density systems.This Thesis consists of a study, design and development of active gate drivers (AGDs) aimed to improve the switching performance of SiC MOSFETs applied to high-frequency power converters. Every developed stage regarding the GDs is validated through tests and experimental studies. In addition, the developed GDs are applied to converters for wireless charging systems of electric vehicle batteries. The results show the effectiveness of the proposed GDs and their viability in power converters based on SiC MOSFET devices.
Download or read book Single Inductor Multiple Output Converters written by Albert Ting Leung Lee and published by CRC Press. This book was released on 2021-12-17 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides a comprehensive overview of Single-Inductor Multiple-Output Converters from both theoretical and practical perspectives. Based on the authors’ in-depth research, the volume covers not only conventional SIMO DC-DC converters but also the new generations of SIMO such as SIMO AC-DC converters, SIMO DC-AC converters (or SIMO inverters), and the latest SIMO hybrid converters. This book offers a holistic and systematic presentation of all types of SIMO converters, encompassing the derivation of the circuit topologies, the definition of key concepts, detailed discussion of theoretical underpinnings, design methodology and control schemes, as well as design considerations and techniques that enable practical implementation. Specific examples of real-world applications of SIMO converters are also provided. The volume offers a comprehensive overview and systematic classification of the traditional and modern topologies of SIMO converters in terms of system architecture, circuit analysis, operating principles, control methods, design considerations and practical implementation. Specifically, the book presents the mathematical models and design principles necessary for analyzing the behavior of each kind of SIMO converter, and building upon that, introduces and imparts new approaches and techniques when designing such converters, guiding engineering students and power engineers towards achieving low-cost, compact and energy efficient SIMO converters. offers the design considerations and optimization as well as describing the key applications of SIMO converters. The book fills a significant niche in the power electronics literature and provides a complete perspective on SIMO converters that hopefully can inspire appreciation and better understanding of the subject matter. It can be directly adopted in undergraduate or graduate coursework as well as postgraduate research programs.
Download or read book Design of Miniaturized Radio frequency DC DC Power Converters written by Anthony David Sagneri and published by . This book was released on 2012 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power electronics appear in nearly every piece of modern electronic hardware, forming an essential conduit from electrical source to load. Portable electronics, an area where a premium is placed on size, weight, and cost, are driving the development of power systems with greater density and better manufacturability. This motivates a push to higher switching frequencies enabling smaller passive components and better integration. To realize these goals this thesis explores devices, circuits, and passives capable of operating efficiently into the VHF regime (30-300 MHz) and their integration into power electronic systems of high power density. A good integrated power MOSFET presages high-density converters. Previous VHF systems were demonstrated with bulky and expensive RF Lateral, Double-Diffused MOSFETs (LDMOSFET). We show that through a combination of layout optimization and safe operating area (SOA) extension integrated devices can achieve near-parity performance to their purpose-built RF discrete cousins over the desired operating regime. A layout optimization method demonstrating a 2x reduction in device loss is presented alongside experimental demonstration of SOA extension. Together the methods yield a 3x reduction in loss that bolsters the utility of the typical (and relatively inexpensive) LDMOS IC power process for VHF converters. Passive component synthesis is addressed in the context of an isolated VHF converter topology. We present a VHF topology where most of the magnetic energy storage is accomplished in a transformer that forms an essential part of the resonant network. The reduced component count aids in manufacturability and size, but places difficult requirements on the transformer design. An algorithm for synthesizing small and efficient air-core transformers with a fully-constrained inductance matrix is presented. Planar PCB transformers are fabricated and match the the design specifications to within 15%. They are 94% efficient and have a power density greater than 2kW per cubic inch. To take full advantage of good devices and printed passives, we develop an IC for the isolated converter having optimized power devices, and integrated gate driver, controller, and hotel functions. The chip is assembled into a complete converter system using the transformers and circuits described above. Flip-chip mounting is used to overcome bondwire parasitics, and reduce packaging volume. The final system achieves 75% efficiency at 75 MHz at 6W.
Download or read book Frequency Characterization of Si SiC and GaN MOSFETs Using Buck Converter in CCM as an Application written by Keshava Gopalakrishna and published by . This book was released on 2013 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt: Present day applications using power electronic converters are focusing towards improving the speed, efficiency, and robustness. This led to the implementation of new devices in such converters where speed and efficiency are of concern. As silicon (Si) based power devices are approaching their operational performance limits with respect to speed, it is essential to analyze the properties of new devices, which are capable of replacing silicon based devices. Wide band-gap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are such materials, whose material properties show promising advantages for power electronic applications. This thesis focuses on the comparison of Si, SiC, and GaN based power devices. A detailed comparison in terms of the material performance based on their figures-of-merit will be discussed. In this thesis, a performance evaluation of Si, SiC, and GaN based power devices used as a high-side switch in a buck DC-DC converter will be performed. A buck converter having specifications: output voltage of 12 V and output power of 120 W. Initially, a design example for switching frequency of 100 kHz will be discussed. Further, an evaluation of the same for increase in switching frequencies will be performed. Finally, analyses of the power loss and efficiency of these devices will be made along with its validation using PSpice, SABER and MATLAB simulation software. It will be shown that the theoretical performance analyses are in accordance with the obtained simulated results. Finally, it will be shown that GaN based power devices have improved operational capabilities at high frequencies than those of Si and SiC.