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Book Semiconducting Metal Oxide Thin Film Transistors

Download or read book Semiconducting Metal Oxide Thin Film Transistors written by ZHOU and published by Myprint. This book was released on 2020-12-29 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Semiconducting Metal Oxide Thin film Transistors

Download or read book Semiconducting Metal Oxide Thin film Transistors written by Ye Zhou (Semiconductor engineer) and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconducting metal oxide thin-film transistors (TFTs) are promising candidates for functional electronic devices. This reference text covers the latest developments in the field, including the design, materials characteristics, device operation principles, specialised device applications and mechanisms, including the latest semiconducting TFT technologies. The book introduces the concepts and working mechanisms of semiconducting metal oxide TFTs, with a focus on metal oxide thin films that have desirable electrical and optical properties. The relationship between material properties and device performance is analysed, and materials and device challenges, as well as possible strategies, are discussed.

Book Semiconducting Metal Oxide Thin Film Transistors

Download or read book Semiconducting Metal Oxide Thin Film Transistors written by Ye Zhou and published by IOP Publishing Limited. This book was released on 2020-12-29 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconducting metal oxide thin-film transistors (TFTs) are promising candidates for functional electronic devices and have attracted considerable attention due to their superior electrical performance, high transparency, excellent stability and uniformity. The book introduces the concepts and working mechanisms of semiconducting metal oxide TFTs, with a focus on metal oxide thin films that have desirable electrical and optical properties. The relationship between material properties and device performance is analysed, and materials and device challenges, as well as possible strategies, are included to promote the commercial translation of metal oxide TFT-based optoelectronic devices. Valuable as a reference text for researchers, and graduate students working in the fields of device physics, semiconducting materials and flexible electronics, the book is also essential reading for engineers working with semiconducting metal oxide TFTs in industry, particularly display and memory technologies. Key Features  First book to focus on the applications of semiconducting metal oxide TFTs Covers the latest technologies in the field, including displays, sensors, logic operations, data storage and neuromorphic computing for artificial intelligence Analyses the relationship between material properties and device performance Includes possible strategies to overcome materials and device challenges to promote the commercial translation of the technology Includes video demonstrations to help readers understand how the devices work

Book High Performance Metal Oxide Thin Film Transistors Via Cluster Control and Interface Engineering

Download or read book High Performance Metal Oxide Thin Film Transistors Via Cluster Control and Interface Engineering written by Zhengxu Wang and published by . This book was released on 2020 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: Around 100 years has passed since the first cathode ray tube has been fabricated. Fast and free transition of graphs provided much convenience for human communication. Generations of display were developed and flat panel display (FPD) techniques are developing tremendously recently. Various demands are raised including high definition, large area, flexibility, etc. Backplane need improving to meet these, especially the thin film transistor (TFT) units. High mobility, easy process and good interfaces are desired. Solution processed amorphous InGaZnO proves a competitive candidate for TFT semiconductor materials. Its electronic performance, uniformity and switching properties turned out among the best. However, problems remain to be solved including mechanism interpretation, precursor control, morphology and interface. Chapter 1 will introduce the history and state of art of TFT in more details. In the following parts of this dissertation, I'll discuss the electronic behavior, morphology and interface of IGZO TFT. In Chapter 2, we performed gated four-probe measurements to extract the intrinsic mobility and contact resistance as functions of gate voltage and temperature. Contact resistance was proved to play a major role in mobility degradation at high gate bias, whereas, band-like transport dominates. We proposed UV-O3 which modified the contact regions and mobility was boosted from 23 to 30 cm2/Vs. In Chapter 3, clusters in precursor solution, which has critical effects on morphology, are discussed. Cluster size distribution was narrowed and size was brought down by acac. Small roughness of metal oxide was achieved and saturated mobility increased from 4.0 to 5.5 cm2/Vs. In a positive bias stress test, turn on voltage shift decreased from 1.6 to 0.3 V/10000s. Cluster size control is a promising way to tune the morphology of solution processed metal oxide film. Small sized high definition display is placing more challenge on backplane TFTs. IGZO is one of the candidates but the unsatisfactory performance of small sized IGZO TFTs is limiting their applicability. Hence, a novel weak acid modification (WAM) strategy was introduced to generate more oxygen vacancies for higher mobility, and to lower the surface roughness. Electrode-IGZO contact was enhanced. Contact resistance was reduced from 9.1 k mm to 2.3 k mm, as measured by the gated four probe (GFP) method. Field effect mobility for small sized devices was boosted from 1.5 cm2/Vs to 4.0 cm2/Vs. Additionally, a 12 12 transistor and organic light emission diode array built from the modified IGZO TFT devices has been demonstrated.

Book Oxide Thin Film Transistors

Download or read book Oxide Thin Film Transistors written by Yue Kuo and published by John Wiley & Sons. This book was released on 2025-01-29 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive resource reviewing fundamentals, device physics and reliability, fabrication processes, and numerous emerging applications of oxide thin film transistor technology over performing traditional thin film transistor technologies Oxide Thin Film Transistors book presents a comprehensive overview of oxide thin film transistor (TFT) science and technology, including fundamental material properties, device operation principles, modeling, fabrication processes, and applications. Split into four sections, the book first details oxide TFT materials including material parameters, and electrical and contact properties. The next section describes oxide TFT devices including designs, reliability, and comparison with other TFT types. The third part delves into the fabrication processes of oxide TFTs. The last section provides insight into existing and emerging applications of oxide TFTs including displays, imagers, circuits, sensors, flexible electronics, and circuits. Written by a team of well-reputed researchers in the field including the inventor of the IGZO TFT, Oxide Thin Film Transistors include information on: Electronic and crystal structure of widegap oxides, covering electronic structure of n- and p-type oxide semiconductors as well as doping limit and band alignment Device physics, covering operation principles, reliability, comparison with other TFT types, and high-frequency performance Fabrication processes, covering deposition methods, gate insulators, and passivation layers Applications, covering liquid crystal, light emitting diode, and electrophoretic displays, flexible electronics, imagers, and integrated circuits Oxide Thin Film Transistors is an ideal textbook resource for students who want to learn about oxide TFTs and a useful, up-to-date reference for researchers and engineers working on oxide TFTs and in related areas.

Book Understanding the Enhanced Mobility of Solution Processed Metal Oxide Thin Film Transistors Having High k Gate Dielectrics

Download or read book Understanding the Enhanced Mobility of Solution Processed Metal Oxide Thin Film Transistors Having High k Gate Dielectrics written by Andre Zeumault and published by . This book was released on 2005 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: Primarily used as transparent electrodes in solar-cells, more recently, physical vapor deposited (PVD) transparent conductive oxide (TCO) materials (e.g. ZnO, In2O3 and SnO2) also serve as the active layer in thin-film transistor (TFT) technology for modern liquidcrystal displays. Relative to a-Si:H and organic TFTs, commercial TCO TFTs have reduced off-state leakage and higher on-state currents. Additionally, since they are transparent, they have the added potential to enable fully transparent TFTs which can potentially improve the power efficiency of existing displays. In addition to PVD, solution-processing is an alternative route to the production of displays and other large-area electronics. The primary advantage of solution-processing is in the ability to deposit materials at reduced-temperatures on lower-cost substrates (e.g. glass, plastics, paper, metal foils) at high speeds and over large areas. The versatility offered by solution-processing is unlike any conventional deposition process making it a highly attractive emergent technology. Unfortunately, the benefits of solution-processing are often overshadowed by a dramatic reduction in material quality relative to films produced by conventional PVD methods. Consequently, there is a need to develop methods that improve the electronic performance of solution-processed materials. Ideally, this goal can be met while maintaining relatively low processing temperatures so as to ensure compatibility with low-cost roll-compatible substrates. Mobility is a commonly used metric for assessing the electronic performance of semiconductors in terms of charge transport. It is commonly observed that TCO materials exhibit significantly higher field-effect mobility when used in conjunction with high-k gate dielectrics (10 to 100 cm2 V−1 s −1 ) as opposed to conventional thermally-grown SiO2 (0.1 to 20 cm2 V−1 s −1 ). Despite the large amount of empirical data documenting this bizarre effect, its physical ori- 2 gin is poorly understood. In this work, the interaction between semiconductor TCO films and high-k dielectrics is studied with the goal of developing a theory explaining the observed mobility enhancement. Electrical investigation suggests that the mobility enhancement is due to an effective doping of the TCO by the high-k dielectric, facilitated by donor-like defect states inadvertently introduced into the dielectric during processing. The effect these states have on electron transport in the TCO is assessed based on experimental data and electrostatic simulations and is found to correlate with negative aspects of TFT behavior (e.g. frequency dispersion, gate leakage, hysteresis, and poor bias stability). Based on these findings, we demonstrate the use of an improved device structure, analogous to the concept of modulation doping, which uses the high-k dielectric film as an encapsulate, rather than a gate-dielectric, to achieve a similar doping effect. In doing so, the enhanced mobility of the TCO/high-k interface is retained while simultaneously eliminating the negative drawbacks associated with the presence of charged defects in the gate dielectrics (e.g. frequency dispersion, gate leakage, hysteresis, and poor bias stability). This demonstrates improved understanding of the role of solution-processed high-k dielectrics in field-effect devices as well as provides a practical method to overcome the performance degradation incurred through the use of low-temperature solution-processed TCOs.

Book Solution Processed Metal Oxide Semiconductors and Their Applications

Download or read book Solution Processed Metal Oxide Semiconductors and Their Applications written by Huajun Chen Chen and published by . This book was released on 2017 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research on electronic devices formed via solution process approaches is a key part of next-generation macro-electronics, such as displays and sensors. Unlike vacuum-based deposition techniques, liquid-phase starting materials support diverse device fabrication routes. Additionally, these techniques can be employed for selective deposition and the creation of various pattern shapes and the low cost of facilities and materials can save expense compared to vacuum infrastructure. Despite the advantages of solution processing, the commercial scaling and applications of this fabrication method are still in their early stages. In particular, the low electrical performance of solution-processed devices is the biggest obstacle to being a broad contributor. In this thesis, I will present the design strategy of high-performance oxide semiconductor thin-film transistors via low-temperature processes, interface engineering and new device structure design to improve mobility and reliability. Additionally, transistor-based biosensor platforms based on high-performance oxide semiconductors will be discussed. Low-dimension semiconductors derived from solution processes have high sensitivity when compared with bulk semiconductors and the uniformity and reproducibility are much better than prevalent nano-scale bioelectronics. The detection of several kinds of molecules will be demonstrated.

Book Thin Film Transistors

Download or read book Thin Film Transistors written by Cherie R. Kagan and published by CRC Press. This book was released on 2003-02-25 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt: A single-source treatment of developments in TFT production from international specialists. It interweaves overlapping areas in multiple disciplines pertinent to transistor fabrication and explores the killer application of amorphous silicon transistors in active matrix liquid crystal displays.

Book Low Temperature UV Assisted Fabrication of Metal Oxide Thin Film Transistor

Download or read book Low Temperature UV Assisted Fabrication of Metal Oxide Thin Film Transistor written by Shuanglin Zhu Zhu and published by . This book was released on 2017 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt: Solution processed metal oxide semiconductors have attracted intensive attention in the last several decades and have emerged as a promising candidate for the application of thin film transistor (TFT) due to their nature of transparency, flexibility, high mobility, simple processing technique and potential low manufacturing cost. However, metal oxide thin film fabricated by solution process usually requires a high temperature (over 300 i C), which is above the glass transition temperature of some conventional polymer substrates. In order to fabricate the flexible electronic device on polymer substrates, it is necessary to find a facile approach to lower the fabrication temperature and minimize defects in metal oxide thin film. In this thesis, the electrical properties dependency on temperature is discussed and an UV-assisted annealing method incorporating Deep ultraviolet (DUV)-decomposable additives is demonstrated, which can effectively improve electrical properties solution processed metal oxide semiconductors processed at temperature as low as 220 i C. By studying a widely used indium oxide (In2O3) TFT as a model system, it is worth noted that compared with the sample without UV treatment, the linear mobility and saturation mobility of UV-annealing sample are improved by 56% and 40% respectively. Meanwhile, the subthreshold swing is decreased by 32%, indicating UV-treated device could turn on and off more efficiently. In addition to pure In2O3 film, the similar phenomena have also been observed in indium oxide based Indium-Gallium-Zinc Oxide (IGZO) system. These finding presented in this thesis suggest that the UV assisted annealing process open a new route to fabricate high performance metal oxide semiconductors under low temperatures.

Book Additive Enhancements for Solution Processed Metal Oxide Thin Film Transistors

Download or read book Additive Enhancements for Solution Processed Metal Oxide Thin Film Transistors written by Philip Li and published by . This book was released on 2018 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt: Solution processed metal oxide semiconductors have attracted much attention as a promising class of materials to be used as the channel material in thin film transistors due to its transparency, high mobility, scalability, and low cost of manufacturing. Nevertheless, there are still major challenges in terms of processing, device performance and stability that need to be overcome before this process can be implemented for large scale production. In this thesis, several chemical additives and their effects on film formation, processing temperature and electrical parameters such as field effect mobility, on-off ratio and threshold voltage shifts under PBS stress tests were investigated. In particular, the addition of ethylene glycol, acetylacetone, and acetic acid were investigated in a metal oxide precursor solution. It was demonstrated that ethylene glycol significantly improved the wettability of the concentrated IGZO solution and resulted in a minimal contact angle of 3.8 degrees. This allowed for coating a concentrated metal oxide precursor solution (0.5M) five times the baseline concentration while still maintaining high film formation quality. The addition of acetylacetone allowed for low annealing temperatures (less than 300i C) through the combustion synthesis route and serves as a protection group to prevent premature formation of metal oxide network in solution. Finally, the addition of acetic acid improved the solubility of the metal precursor in the solution and allowed for higher concentrations of metal precursor to be dissolved in solution, which becomes important if higher viscosity precursors for thick films are needed. The addition of these additives produced devices with near zero turn on voltage, excellent on-off ratio (>107), and superior stability (less than eight volts of threshold voltage shift at 10,000 seconds of PBS). The findings in this thesis present improved synthesis routes for solution processed semiconductors and open new possibilities for the fabrication of flexible electronic devices and next generation large scale consumer electronics.

Book Composition Engineering for Solution Processed Gallium Rich Indium Gallium Zinc Oxide Thin Film Transistors

Download or read book Composition Engineering for Solution Processed Gallium Rich Indium Gallium Zinc Oxide Thin Film Transistors written by Isaac Caleb Wang and published by . This book was released on 2018 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal oxides have risen to prominence in recent years as a promising active layer for thin film transistors (TFTs). One of the main reasons for this has been its value in display technology. Conventionally, displays have relied on amorphous hydrogenated silicon (a-Si:H) TFTs but the demand for large area displays with high resolution, fast response time, low power consumption and compatibility with integrated driving circuits have prompted research into other semiconducting materials. As a result, metal oxides have become major prospects to replace a-Si:H with their high-performance electrical characteristics and simplicity of processing, making them valuable switching elements in display technology. Particularly, quaternary metal oxides such as the amorphous Indium-Gallium-Zinc-Oxide (IGZO) have demonstrated extremely high performances as TFTs, prompting extensive research in the field. The conventional method of producing metal oxide thin films has been through vacuum deposition methods such as sputtering. However, for large area applications these vacuum deposition methods face inherent limitations which prevent easy application and device fabrication. Facing these restrictions, solution-processing has become a popularly researched alternative in producing metal oxide thin films due to their simple processing requirements, low cost, and ability to be applied over large areas. In solution-processed IGZO, there have been a couple approaches to improve device performance and stability as well as simplify processing. In this work, we produce a gallium-rich 2:2:1 IGZO TFT using solution processes and study its electrical characteristics and stability. In this paper, we demonstrate a working solution-processed gallium-rich 2:2:1 IGZO TFT and compare it to a solution-processed indium-rich device to quantify its stability and performance. Through this work, we show that solution-processing is a viable fabrication method for gallium-rich IGZO, which can be a high-stability alternative to other compositions of IGZO devices.

Book Metal Oxide Thin Film Transistors on Paper Substrate Fabrication Characterization and Printing Process

Download or read book Metal Oxide Thin Film Transistors on Paper Substrate Fabrication Characterization and Printing Process written by Nack-Bong Choi and published by . This book was released on 2012 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work validates the compatibility of a-IGZO TFT on paper substrate for the disposable microelectronics application and presents the potential of low-cost and high resolution printing technology.