Download or read book Numerical Modeling Tools for Chemical Vapor Deposition written by National Aeronautics and Space Adm Nasa and published by Independently Published. This book was released on 2018-11-07 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt: Development of general numerical simulation tools for chemical vapor deposition (CVD) was the objective of this study. Physical models of important CVD phenomena were developed and implemented into the commercial computational fluid dynamics software FLUENT. The resulting software can address general geometries as well as the most important phenomena occurring with CVD reactors: fluid flow patterns, temperature and chemical species distribution, gas phase and surface deposition. The physical models are documented which are available and examples are provided of CVD simulation capabilities. Jasinski, Thomas J. and Childs, Edward P. Unspecified Center...
Download or read book Numerical Modeling Tools for Chemical Vapor Deposition written by Thomas John Jasinski and published by . This book was released on 1992 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Numerical Modeling Tools for Chemical Vapor Deposition written by Thomas J. Jasinski and published by . This book was released on 1992 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling of Chemical Vapor Deposition of Tungsten Films written by Chris R. Kleijn and published by Birkhäuser. This book was released on 2013-11-11 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor equipment modeling has in recent years become a field of great interest, because it offers the potential to support development and optimization of manufacturing equipment and hence reduce the cost and improve the quality of the reactors. This book is the result of two parallel lines of research dealing with the same subject - Modeling of Tungsten CVD processes -, which were per formed independently under very different boundary conditions. On the one side, Chris Kleijn, working in an academic research environment, was able to go deep enough into the subject to laya solid foundation and prove the validity of all the assumptions made in his work. On the other side, Christoph Werner, working in the context of an industrial research lab, was able to closely interact with manufacturing and development engineers in a modern submicron semiconductor processing line. Because of these different approaches, the informal collaboration during the course of the projects proved to be extremely helpful to both sides, even though - or perhaps because - different computer codes, different CVD reactors and also slightly different models were used. In spite of the inconsistencies which might arise from this double approach, we feel that the presentation of both sets of results in one book will be very useful for people working in similar projects.
Download or read book Chemical Vapor Deposition Fluid Flow Simulation Modelling Tool written by National Aeronautics and Space Administration NASA and published by . This book was released on 2018-11-13 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: Accurate numerical simulation of chemical vapor deposition (CVD) processes requires a general purpose computational fluid dynamics package combined with specialized capabilities for high temperature chemistry. In this report, we describe the implementation of these specialized capabilities in the spectral element code NEKTON. The thermal expansion of the gases involved is shown to be accurately approximated by the low Mach number perturbation expansion of the incompressible Navier-Stokes equations. The radiative heat transfer between multiple interacting radiating surfaces is shown to be tractable using the method of Gebhart. The disparate rates of reaction and diffusion in CVD processes are calculated via a point-implicit time integration scheme. We demonstrate the use above capabilities on prototypical CVD applications. Bullister, Edward T. Unspecified Center FLUID DYNAMICS; FLUID MECHANICS; GAS EXPANSION; HIGH TEMPERATURE; INCOMPRESSIBLE FLOW; MATHEMATICAL MODELS; NAVIER-STOKES EQUATION; RADIATIVE HEAT TRANSFER; REACTION KINETICS; THERMAL EXPANSION; VAPOR DEPOSITION; COMPUTATIONAL FLUID DYNAMICS; COMPUTERIZED SIMULATION; DIFFUSION...
Download or read book Semi empirical and Numerical Modeling of Metal organic Chemical Vapor Deposition written by Ziba Nami and published by . This book was released on 1996 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Numerical Simulation of Chemical Vapor Deposition written by Tak-Leung Cheung and published by . This book was released on 1999 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book NASA Technical Memorandum written by United States. National Aeronautics and Space Administration and published by . This book was released on 1992 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Numerical Modeling of Particle Nucleation Growth and Transport During Atmospheric Pressure Chemical Vapor Deposition of Silicon from Silane written by Milind R. Mahajan and published by . This book was released on 1999 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Computational Modeling of Chemical Vapor Deposition written by Himel Barua and published by . This book was released on 2016 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary objective of this study is to obtain the rate of Carbon deposition by chemical vapor deposition (CVD) process for material samples hanged in CVD reactor. The samples include net of bundles of fibers, semi-opened channel cut through rectangular sample and sample with circular holes. Momentum, continuity and transport equations for chemical species within gas phase and surface reactions have been solved numerically. For numerical solution by finite-volume method ANSYS FLUENT software and for geometric modeling and finite-volume meshing ANSYS Workbench software have been used. For numerical study two approaches have been taken. The first approach is a single-step solution where the flow field in reactor including flow field near and inside the sample have been resolved simultaneously. The second approach is a two-step solution, where the model has been divided into reactor-scale model and sample-scale model, where for each one a separate numerical mesh has been generated and a corresponding set of numerical parameters has been optimized separately for each model. The former process is a straightforward one that is applicable to a sample of any linear scale; however, the approach is computationally expensive relative to the latter one. The latter approach assumes that the scale of sample is small compared to the reactor scale and the two CFD models are solved sequentially. Results obtained by one-step and two-steps approaches are similar in terms of obtained CVD rates with some discrepancy caused by use of different numerical meshes and because in the latter model there is no feedback on the reactor flow field by the sample. For fibrous samples, CVD rates are obtained at the range of volume fractions. Obtained CVD rates are near-uniform along the fiber circumference and mostly sensitive to temperature field in reactor. For rectangular model with channel samples, the CVD rate is obtained at vertical orientations of the sample along the reactor axis for suspended sample with circular holes, CVD rates are obtained along the length of the hole. Near both entrances of each circular hole, vortices are generated which block the flow entering inside the hole. Because of diminished flowrate and corresponding advection inside the hole, C deposition is lowest at the center of the hole. In terms of effect on deposition, C2H2 and CH4 plays more significant role than other species. As C2H2 directly participates in surface reactions, higher concentration of C2H2 assures higher growth rate of C. CH4 in one of the primary species with largest initial mass fraction, participates in gas-phase reactions and is responsible for production of other intermediate gas species. Higher depletion of CH4 assures higher production of C2H2 and corresponding higher C deposition. This observation is similar for all the substrates.
Download or read book Chemical Physics of Thin Film Deposition Processes for Micro and Nano Technologies written by Y. Pauleau and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date collection of tutorial papers on the latest advances in the deposition and growth of thin films for micro and nano technologies. The emphasis is on fundamental aspects, principles and applications of deposition techniques used for the fabrication of micro and nano devices. The deposition of thin films is described, emphasising the gas phase and surface chemistry and its effects on the growth rates and properties of films. Gas-phase phenomena, surface chemistry, growth mechanisms and the modelling of deposition processes are thoroughly described and discussed to provide a clear understanding of the growth of thin films and microstructures via thermally activated, laser induced, photon assisted, ion beam assisted, and plasma enhanced vapour deposition processes. A handbook for engineers and scientists and an introduction for students of microelectronics.
Download or read book EuroCVD 17 CVD 17 written by M. T. Swihart and published by The Electrochemical Society. This book was released on 2009-09 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions includes papers presented at the 2009 EuroCVD-17 and CVD 17 symposium. Topical areas covered include fundamentals of chemical vapor deposition (CVD), chemistry of precursors for CVD, synthesis of nanomaterials by CVD and related methods, industrial applications of CVD, and novel CVD reactors and processes. This issue is sold as a two-part set and also includes a CD-ROM of the entire issue.
Download or read book Proceedings of the Seventh International Conference on Chemical Vapor Deposition 1979 written by Thomas O. Sedgwick and published by . This book was released on 1979 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Metallurgical Process Design written by George E. Totten and published by CRC Press. This book was released on 2004-05-25 with total page 992 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reviewing an extensive array of procedures in hot and cold forming, casting, heat treatment, machining, and surface engineering of steel and aluminum, this comprehensive reference explores a vast range of processes relating to metallurgical component design-enhancing the production and the properties of engineered components while reducing manufacturing costs. It surveys the role of computer simulation in alloy design and its impact on material structure and mechanical properties such as fatigue and wear. It also discusses alloy design for various materials, including steel, iron, aluminum, magnesium, titanium, super alloy compositions and copper.
Download or read book CVD XII written by Klavs F. Jensen and published by . This book was released on 1993 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Software Solutions for ICME written by Georg J. Schmitz and published by John Wiley & Sons. This book was released on 2016-09-20 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: As one of the results of an ambitious project, this handbook provides a well-structured directory of globally available software tools in the area of Integrated Computational Materials Engineering (ICME). The compilation covers models, software tools, and numerical methods allowing describing electronic, atomistic, and mesoscopic phenomena, which in their combination determine the microstructure and the properties of materials. It reaches out to simulations of component manufacture comprising primary shaping, forming, joining, coating, heat treatment, and machining processes. Models and tools addressing the in-service behavior like fatigue, corrosion, and eventually recycling complete the compilation. An introductory overview is provided for each of these different modelling areas highlighting the relevant phenomena and also discussing the current state for the different simulation approaches. A must-have for researchers, application engineers, and simulation software providers seeking a holistic overview about the current state of the art in a huge variety of modelling topics. This handbook equally serves as a reference manual for academic and commercial software developers and providers, for industrial users of simulation software, and for decision makers seeking to optimize their production by simulations. In view of its sound introductions into the different fields of materials physics, materials chemistry, materials engineering and materials processing it also serves as a tutorial for students in the emerging discipline of ICME, which requires a broad view on things and at least a basic education in adjacent fields.
Download or read book Mathematical Modeling of Chemical Vapor Deposition Processes and Its Application to Thin Film Technology written by Norman Washington Loney and published by . This book was released on 1991 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: A number of workers in the field of Chemical vapor deposition (CVD) have presented mathematical models in the literature. Some workers were able to produce analytical expressions for the interwafer concentration profile. These analytical expressions were based entirely on zero or first order chemical reaction rates. Until now, it appears that a chemical reaction rate expression that is not zero or first order directly, must be handled by a numerical scheme. Presented herein is a mathematical model with an analytical interwafer concentration profile. This concentration profile is neither zero nor first order but shifts from zero to first order as the reactor is axially traversed. The approach used avoids the sometimes cumbersome numerical schemes, while dealing effectively with non-integer order rate expressions characteristic to CVD kinetics. This approach is also amenable to higher order rate expressions such as kCn, n> 1. We employ a boundary perturbation technique to reduce a nonlinear system of partial differential equations that was otherwise non-tractable analytically. Essentially, analytical expressions are derivable for the concentration profile in the interwafer region regardless of the kinetic expression's non-linearity. The proposed model was tested with independently published experimental data. In each case the model predictions compare favorable with the experimental data. Results show that deposition rates of: silicon nitride from dichlorosilane and ammonia, silicon from silane and silicon dioxide from tetraethylorthosilicate can be explained using a shifting order reaction. Further, the neglect of gas phase reactions did not affect the predicted deposition rates. Concurrence with experimental results on thickness uniformity (radial) is achieved using this model. Control of nonuniformity on the wafers during a CVD process depends on the magnitude of the Sherwood number. Both experimental data and the proposed model show that surface uniformity improves with diminishing Sherwood numbers. In this work, it is demonstrated (at least qualitatively) that surface chemical reaction provides the controlling resistance. For the range of concentrations and low pressures used in CVD the interwafer Damkzh̲ler number is smaller than unity. If the ratio of reaction velocity to diffusion velocity is larger than unity, uniform surface deposition cannot be expected. This implies the surface process is controlling.
