Download or read book Novel Fabrication Techniques and Transport Characterization of Semiconductor Nanostructures written by Jeffrey W. Sleight and published by . This book was released on 1995 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Theory of Transport Properties of Semiconductor Nanostructures written by Eckehard Schöll and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.
Download or read book Semiconductor Nanostructures for Optoelectronic Devices written by Gyu-Chul Yi and published by Springer Science & Business Media. This book was released on 2012-01-13 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.
Download or read book Physics and Applications of Semiconductor Quantum Structures written by T. Yao and published by CRC Press. This book was released on 2001-01-01 with total page 483 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by international experts, Physics and Applications of Semiconductor Quantum Structures covers the most important recent advances in the field. Beginning with a review of the evolution of semiconductor superlattices and quantum nanostructures, the book explores fabrication and characterization techniques, transport, optical, and spin-dependent properties, and concludes with a section devoted to new device applications. The book allows those who already have some familiarity with semiconductor devices to expand their knowledge into new developing topics involving semiconductor quantum structures.
Download or read book Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization written by Richard Haight and published by World Scientific. This book was released on 2012 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt: As we delve more deeply into the physics and chemistry of functional materials and processes, we are inexorably driven to the nanoscale. And nowhere is the development of instrumentation and associated techniques more important to scientific progress than in the area of nanoscience. The dramatic expansion of efforts to peer into nanoscale materials and processes has made it critical to capture and summarize the cutting-edge instrumentation and techniques that have become indispensable for scientific investigation in this arena. This Handbook is a key resource developed for scientists, engineers and advanced graduate students in which eminent scientists present the forefront of instrumentation and techniques for the study of structural, optical and electronic properties of semiconductor nanostructures.
Download or read book Advances in Semiconductor Nanostructures written by Alexander V. Latyshev and published by Elsevier. This book was released on 2016-11-10 with total page 553 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. - Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures - Covers recent developments in the field from all over the world - Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries
Download or read book Growth And Characterization Of Semiconductor Nanostructure For Device Applications written by Dr. Jehova Jire L. Hmar and published by BFC Publications. This book was released on 2023-03-04 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is intended to provide knowledge for students and learners in the field of nanoscale science and nanotechnology. Nanotechnology is design, fabrication and application of nanostructures or nanomaterials, and the fundamental understanding of the relationships between physical properties or phenomena and material dimensions. Nanotechnology deals with materials or structures in nanometer scales, typically ranging from subnanometers to several hundred nanometers. Nanotechnology is a new field or a new scientific domain. Similar to quantum mechanics, on nanometer scale, materials or structures may possess new physical properties or exhibit new physical phenomena. Nanotechnology has an extremely broad range of potential applications from nanoscale electronics and optics and therefore it requires formation of and contribution from multidisciplinary teams of physicists, chemists, materials scientists and engineers. The aim of this book “Growth and Characterization of Semiconductor Nanostructure for Device Applications” is to summarize the fundamentals and established techniques of synthesis, fabrication, characterization and applications of nanomaterials and nanostructures so as to provide readers a systematic and coherent picture about synthesis, fabrication and characterization of nanomaterials.
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Carlo Lamberti and published by Elsevier Science Limited. This book was released on 2013 with total page 813 pages. Available in PDF, EPUB and Kindle. Book excerpt: Characterization of Semiconductor Heterostructures and Nanostructures" is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. - Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures. - Most of the chapters are authored by scientists that are world wide among the top-ten in publication ranking of the specific field. - Each chapter starts with a didactic introduction on the technique. - The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures.
Download or read book Group IV Semiconductor Nanostructures Volume 832 written by Materials Research Society. Meeting and published by . This book was released on 2005-05-24 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: Broad interest and steady progress in the area of Group-IV (Si:Ge:C) semiconductor nanostructures, including quantum dots, wires and wells, has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. This volume brings together scientists from different disciplines to discuss fabrication and characterization techniques and optical and transport properties, as well as applications of Group-IV semiconductor nanostructures. Fields such as photonic systems, nanocrystal memories, light-emitting and THz devices, nanowire-based interconnections and transistors are addressed. Topics include: nanoscale silicon-based photonic systems; Si/SiGe/SiN heterostructures and devices; Si/SiGe quantum cascade laser for terahertz; three-dimensional Si/SiGe nanostructures; Si nanocrystals and porous Si- light-emitting properties; Si nanocrystals and porous Si - other properties; Group-IV semiconductor nanowires; and rare-earth-doped Group-IV semiconductor nanostructures.
Download or read book Theory of Transport Properties of Semiconductor Nanostructures written by Eckehard Schöll and published by Springer Science & Business Media. This book was released on 1997-12-31 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.
Download or read book Fabrication and Characterization of Novel Nanostructures Based on Block Copolymer Lithography written by Vivian Peng-Wei Chuang and published by . This book was released on 2009 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: (cont.) As the inter-hole spacing is decreased, both experiment and simulation results show that the coercivity and switching field distribution is reduced, unlike the behavior seen in films with micron- sized holes. In the multilayer, unlike the continuous film, the NiFe reverses at positive fields due to the strong magnetostatic interactions between the Co and NiFe layers present near the holes. Finally, arrays of high-aspect-ratio single crystal silicon nanowires (SiNWs) have also been fabricate by combining block copolymer lithography and metal assisted etching. These SiNWs may be useful in the application of field-effect biosensors and lithium batteries.
Download or read book Fabrication and Characterization of Compound Semiconductor Nanostructures written by Roberto Ricardo Panepucci and published by . This book was released on 1996 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor optoelectronic devices are expected to have their performance improved by the use of quantum confinement in the active region with sizes in the range of tenths of nanometers. The decrease in volume of the active region and the modification in the density of states in quantum structures is predicted to improve the threshold current, increase the modulation bandwidth, yield narrower spectral linewidths, and reduce temperature sensitivity in semiconductor lasers. This thesis reports the development and characterization of several fabrication techniques of compound semiconductor nanostructures on $rm Insb{0.53}Gasb{0.47}As/InP$ and $rm Insb{x}Gasb{1-x}As/GaAs$, and the optical properties of the fabricated structures. Requirements on the electron beam lithography for each fabrication technique are presented, with emphasis on the capabilities of the lithography tool and parameters of the resist material, in particular, ZEP-520 and bilayers of PMMA. Photoluminescence measurements at 5 K were used to characterize the optical quality of the samples. Fabrication of quantum wires and dots using highly anisotropic reactive ion etching of $rm Insb{0.53}Gasb{0.47}As/InP$ with $rm CHsb4{:}Hsb2$ plasmas with 40 nm lateral sizes is presented. The fabrication of shallow- and deep-etched quantum wires by selective crystallographic wet etching resulting in very narrow wires as small as 15 nm in width is presented. The free Cl$sb2$ thermal etching of $rm Insb{0.53}Gasb{0.47}As/InP$ was developed, and its applications to quantum wire and quantum dot fabrication are presented. The fabricated structures showed good quality sidewalls comparable to wet etching techniques. Regrowth of InP was investigated on as-etched structures with and without SiO$sb2$ masks. Finally, several processes of sample preparation for the selective area epitaxy of $rm Insb{x}Gasb{1-x}As/GaAs$ on submicron openings in SiO$sb2$ masks for quantum wire fabrication were investigated. The inhomogeneity of the growth across an array of wires was investigated by spatially resolved luminescence and compared to a diffusion limited growth model.
Download or read book Fabrication and Characterization of III V Compound Semiconductor Nanostructures written by Marlene Zander and published by . This book was released on 2012 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Novel Fabrication and Characterization Methods for Conducting Polymer Nanostructures and Microstructures written by Cosmin Laslau and published by . This book was released on 2012 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: "To develop devices based on conducting polymers for the benefit of humanity - such as, for example, artificial muscles and lab-on-a-chip diagnostics - we require the ability to reliably fabricate and understand these materials at the micro and nano scales. In this thesis I present research towards that goal, by developing novel experimental techniques for the fabrication and characterization of poly(3,4-ethylenedioxythiophene) (PEDOT) and polyaniline (PANI), two prominent conducting polymers. Many of the strategies presented herein are based on miniaturized pipettes driven by scanning ion conductance microscopy (SICM), with some complementary techniques also explored. I begin this thesis work by describing the construction of a low-cost SICM, and its further development to include novel modifications that enable its application to conducting polymers. One of these is the first SICM-based measurement of the ion flux that underpins PEDOT actuation, an important issue in artificial muscles and micropumps. Another is the first electrochemical fabrication of microscale PEDOT and PANI structures and arrays. This approach is then extended to map the activity of the resulting microstructures using modified SICM-based protocols. For example, it is demonstrated that pipette-defined cyclic voltammetry can yield highly localized characterization of microstructures, an important topic for biosensor applications. Indeed, this technique is demonstrated herein for the characterization of a PEDOT nanowire based DNA sensor. Finally, complementary studies on PANI nanostructures are also presented. The first synchrotron radiation studies of PANI nanotube self-assembly is undertaken, revealing crystallinity at critical early stages of the reaction. Furthermore, focused ion beam and electron microscopy techniques are used to perform studies on the electrical properties on individual PANI nanostructures. Both of these have relevance for potential integration with the aforementioned SICM-based techniques. Altogether, these methodological innovations and resulting findings represent significant advances in the burgeoning field of pipette-localized conducting polymer fabrication and characterization. I conclude the thesis with implications discussed for future fundamental research and device applications".
Download or read book Fabrication and Characterisation of Device Quality ZnO Nanostructures written by Augustine Che Mofor and published by Cuvillier Verlag. This book was released on 2007-07-11 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since ZnO resurfaced as a very promising semiconductor material for applications in microelectronics, optoelectronics, sensor technology, biomedicine and spin electronics, producing high purity ZnO nanostructures for such applications has rather proven to be challenging. This book first revises the main properties of ZnO as a semiconductor and nanomaterial and also some fabrication techniques for nanostructures. It later concentrates on the development of a vapour transport system for the growth of high quality ZnO nanostructures (mainly nanorods). The book attempts to explain the influence of reactor pressure, growth temperature and growth time on the morphology and quality of ZnO nanorods. While intrinsic (undoped) ZnO nanorods were grown for extensive analysis, transition metal-doped ZnO nanorods were also fabricated and investigated for possible applications in magnetoelectronics/spintronics. Conventional material characterisation methods are also revisited and employed to analyse the crystalline quality, optical, electrical and magnetic properties of ZnO nanorods. Since the book is writtenin an application-oriented fashion, it extends to the fabrication of ZnO nanrorod-based device structures. Here, nano p-n junctions and nano ZnO/ZnMgO quantum well structures are also presented. At the end, the reader clearly sees how ZnO nanorods of extremely high crystalline quality can be grown using an unconventional technique.
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Semiconductor Nanostructures and Nanodevices Nanofabrication and nanoscale characterization written by Alexander A. Balandin and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
