Download or read book Non volatile Memory Characterization Modeling and Simulation written by Jitendra J. Makwana and published by . This book was released on 2005 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling Electrical Characterization and Scaling Issues of Discrete trap Non volatile Memories written by Luca Vito Bruno Perniola and published by . This book was released on 2005 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: The PhD thesis, made in collaboration between the Institut National Polytechnique de Grenoble and the University of Pisa, had the final objective to characterise and model the special effects of discrete-trap non-volatile memories as nanocrystal, SONOS or NROM memories. We could develop a common analysis of some electrical features of these different architectures, like the programming window distribution, the "dual-bit" behavior and the data retention under different experimental conditions (initial write or test's temperature). The content of the PhD thesis is made of a part constituted by experimental results of electrical characterization of memories is presented, and another part constituted by the modelling results from analytical and numerical simulations, developed for the investigation of the scaling issues related to these types of memories.

Download or read book Characterization and Modeling of Advanced Charge Trapping Non Volatile Memories written by Vincenzo Della marca and published by . This book was released on 2013 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: The silicon nanocrystal memories are one of the most attractive solutions to replace the Flash floating gate for nonvolatile memory embedded applications, especially for their high compatibility with CMOS process and the lower manufacturing cost. Moreover, the nanocrystal size guarantees a weak device-to-device coupling in an array configuration and, in addition, for this technology it has been shown the robustness against SILC. One of the main challenges for embedded memories in portable and contactless applications is to improve the energy consumption in order to reduce the design constraints. Today the application request is to use the Flash memories with both low voltage biases and fast programming operation. In this study, we present the state of the art of Flash floating gate memory cell and silicon nanocrystal memories. Concerning this latter device, we studied the effect of main technological parameters in order to optimize the cell performance. The aim was to achieve a satisfactory programming window for low energy applications. Furthermore, the silicon nanocrystal cell reliability has been investigated. We present for the first time a silicon nanocrystal memory cell with a good functioning after one million write/erase cycles, working on a wide range of temperature [-40°C; 150°C]. Moreover, ten years data retention at 150°C is extrapolated. Finally, the analysis concerning the current and energy consumption during the programming operation shows the opportunity to use the silicon nanocrystal cell for low power applications. All the experimental data have been compared with the results achieved on Flash floating gate memory, to show the performance improvement.

Download or read book Characterization and Modeling of Phase Change Memories written by Giovanni Betti Beneventi and published by LAP Lambert Academic Publishing. This book was released on 2012 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: Non-Volatile Memory (NVM) technologies play a fundamental role in the semiconductor memory industry. The non-stop increasing of functionalitiesFinal Overview ”and performances of consumer electronic products such as digital cameras, MP3 players, smart-phones, computers, and solid-state hard disks, claims for a continuous improvement of memory capacity and features. However, Flash Memory technology, which plays the major role in the today NVM market, presents intrinsic physical constraints that hamper Flash further scaling. In this context, Phase-Change Memory (PCM) is an emerging NVM technology aiming to replace Flash in many applications. PCM indeed features superior performances, like outstanding scalability perspectives, faster programming, and higher endurance. For these reasons, PCM is a topic of ever increasing interests for the scientific community and for the microelectronics industry. "Characterization and Modeling of Phase-Change Memories" introduces the main features of the PCM technology, and discusses three case studies dealing with key aspects for the further development of advanced PCM, such as new materials, electrical characterizatio, and understanding of device physics.

Download or read book Advances in Non volatile Memory and Storage Technology written by Yoshio Nishi and published by Woodhead Publishing. This book was released on 2019-06-15 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. - Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories - Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping and resistive random access memory

Download or read book Solid State Drives SSDs Modeling written by Rino Micheloni and published by Springer. This book was released on 2017-03-28 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces simulation tools and strategies for complex systems of solid-state-drives (SSDs) which consist of a flash multi-core microcontroller plus NAND flash memories. It provides a broad overview of the most popular simulation tools, with special focus on open source solutions. VSSIM, NANDFlashSim and DiskSim are benchmarked against performances of real SSDs under different traffic workloads. PROs and CONs of each simulator are analyzed, and it is clearly indicated which kind of answers each of them can give and at a what price. It is explained, that speed and precision do not go hand in hand, and it is important to understand when to simulate what, and with which tool. Being able to simulate SSD’s performances is mandatory to meet time-to-market, together with product cost and quality. Over the last few years the authors developed an advanced simulator named “SSDExplorer” which has been used to evaluate multiple phenomena with great accuracy, from QoS (Quality Of Service) to Read Retry, from LDPC Soft Information to power, from Flash aging to FTL. SSD simulators are also addressed in a broader context in this book, i.e. the analysis of what happens when SSDs are connected to the OS (Operating System) and to the end-user application (for example, a database search). The authors walk the reader through the full simulation flow of a real system-level by combining SSD Explorer with the QEMU virtual platform. The reader will be impressed by the level of know-how and the combination of models that such simulations are asking for.

Download or read book Computer Aided Design Of Micro And Nanoelectronic Devices written by Chinmay Kumar Maiti and published by World Scientific. This book was released on 2016-10-27 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: Micro and nanoelectronic devices are the prime movers for electronics, which is essential for the current information age. This unique monograph identifies the key stages of advanced device design and integration in semiconductor manufacturing. It brings into one resource a comprehensive device design using simulation. The book presents state-of-the-art semiconductor device design using the latest TCAD tools.Professionals, researchers, academics, and graduate students in electrical & electronic engineering and microelectronics will benefit from this reference text.

Download or read book Nanoscale Semiconductor Memories written by Santosh K. Kurinec and published by CRC Press. This book was released on 2017-07-28 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.

Download or read book Design Exploration of Emerging Nano scale Non volatile Memory written by Hao Yu and published by Springer Science & Business. This book was released on 2014-04-18 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices. Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design. • Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; • Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system optimization; • Provides both theoretical analysis and practical examples to illustrate design methodologies; • Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors.

Download or read book Modeling And Design Analysis Of Emerging Non volatile Memories For Future Computer Systems written by Yang Zheng and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: As traditional SRAM and DRAM are facing leakage power and fabrication difficulties beyond 22nm technology, emerging memory technologies such as spin transfer-torque RAM (STT-RAM), phase-change RAM (PCRAM), and resistive RAM (ReRAM) have been widely studied as promising candidates for the next generation memory technologies. Among all these NVM technologies, STT-RAM is expected to be used as on-chip caches for its fast access latency and better scalability. While ReRAM is predicted to replace NAND flash in the foreseeable future due to its extremely high density.However, several challenges have to be dealt with before these emerging memory technologies being commercialized. Although the read latency of STT-RAM is relatively fast, the write latency remains to be slow. Also, traditional 1-Transistor-1-MTJ cell structure suffers from severe leakage current and dynamic power as the technology node continuously shrinks down. On the other hand, ReRAM also suffers from reliability problems. Due to the stochastic nature of memristor, ReRAM device not only suffers from spatial variation, but also temporal variation. As the cross-point structure is commonly used for ReRAM devices since it offers higher density and lower cost, the reliability issue of ReRAM becomes a constraint on preventing ReRAM being commercialized as large-scale memory.The thesis proposes models and analysis on three novel array-level structures to mitigate the problems existed in STT-RAM based memory technology from different aspects. The parallel shared 1TNJ structure decreases the cell area by rerouting the wires between the access transistor and the MTJ so that one transistor is responsible for multiple MTJs. On the other hand, the 1S1J cross-point structure uses selector as the access transistor for better scalability. Moreover, The FinFET device is introduced to cut off leakage current and reduce the cell area. The thesis also proposes a model for analyzing the reliability and variability issues in ReRAM based memory technology. The thesis provides a detailed analysis on different reliability issues, and proposes several mitigation solutions.

Download or read book Emerging Non volatile Memory Technologies written by Wen Siang Lew and published by Springer Nature. This book was released on 2021-01-09 with total page 439 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.

Download or read book Logic Non volatile Memory The Nvm Solutions For Ememory written by Charles Ching-hsiang Hsu and published by World Scientific. This book was released on 2014-03-18 with total page 319 pages. Available in PDF, EPUB and Kindle. Book excerpt: Would you like to add the capabilities of the Non-Volatile Memory (NVM) as a storage element in your silicon integrated logic circuits, and as a trimming sector in your high voltage driver and other silicon integrated analog circuits? Would you like to learn how to embed the NVM into your silicon integrated circuit products to improve their performance?This book is written to help you.It provides comprehensive instructions on fabricating the NVM using the same processes you are using to fabricate your logic integrated circuits. We at our eMemory company call this technology the embedded Logic NVM. Because embedded Logic NVM has simple fabrication processes, it has replaced the conventional NVM in many traditional and new applications, including LCD driver, LED driver, MEMS controller, touch panel controller, power management unit, ambient and motion sensor controller, micro controller unit (MCU), security ID setting tag, RFID, NFC, PC camera controller, keyboard controller, and mouse controller. The recent explosive growth of the Logic NVM indicates that it will soon dominate all NVM applications. The embedded Logic NVM was invented and has been implemented in users' applications by the 200+ employees of our eMemory company, who are also the authors and author-assistants of this book.This book covers the following Logic NVM products: One Time Programmable (OTP) memory, Multiple Times Programmable (MTP) memory, Flash memory, and Electrically Erasable Programmable Read Only Memory (EEPROM). The fundamentals of the NVM are described in this book, which include: the physics and operations of the memory transistors, the basic building block of the memory cells and the access circuits.All of these products have been used continuously by the industry worldwide. In-depth readers can attain expert proficiency in the implementation of the embedded Logic NVM technology in their products.

Download or read book Modeling Simulation and Optimization written by Biplab Das and published by Springer Nature. This book was released on 2021-03-17 with total page 802 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book includes selected peer-reviewed papers presented at the International Conference on Modeling, Simulation and Optimization, organized by National Institute of Technology, Silchar, Assam, India, during 3–5 August 2020. The book covers topics of modeling, simulation and optimization, including computational modeling and simulation, system modeling and simulation, device/VLSI modeling and simulation, control theory and applications, modeling and simulation of energy system and optimization. The book disseminates various models of diverse systems and includes solutions of emerging challenges of diverse scientific fields.

Download or read book Design of a Smart Non volatile Memory Controller written by Myoungsoo Jung and published by . This book was released on 2013 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Journal of Nanoscience and Nanotechnology written by and published by . This book was released on 2007 with total page 1214 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication Characterization and Modeling of Honey and Zirconium Oxide Based Non volatile Resistive Random Access Memory written by Aleksey Andrey Sivkov and published by . This book was released on 2021 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work the resistive switching properties of a natural bio-organic material - honey thin film synthesized by a solution process and an inorganic oxide - (ZrO2) thin film deposited by plasma-enhanced atomic layer deposition (PE-ALD), are explored. A dried honey film was sandwiched in between a copper oxide (CuxO) bottom electrode and a copper (Cu) top electrode to form a metal-insulator-metal structure on a glass substrate. Current-voltage measurements showed that the device exhibited bipolar switching characteristics with Ohmic conduction behavior and a read memory window of 2.6 V. When biased at a read voltage of 0.2 V, the data retention time is over an interval of 104 s and ON/OFF ratio is in the order of 105. These properties prove the potential of honey based organic resistive switching devices for “green” electronics and nonvolatile memory applications. A 10 nm-thick ZrO2 film as an active switching layer sandwiched between aluminium (Al) top electrode and silver (Ag) bottom electrode. Bipolar resistive switching characteristics were demonstrated by current-voltage measurements with a read memory window of 6.6 V, ON/OFF current ratio nearly 105 and a retention time of 104 s. Current conduction at low resistance states follows Ohm’s law, while at high resistance state governed by space charge limited conduction. These indicate the switching mechanism is attributed to filamentary conduction. A SPICE model was applied to model the device, with simulation results measurement data in good agreement. This study proves the potential applications of PE-ALD ZrO2 for non-volatile resistive random-access memories.

Download or read book Simulation of Semiconductor Processes and Devices 2004 written by Gerhard Wachutka and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 387 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.