Download or read book Neutron Transmutation Doping of Silicon for the Production of Radiation Detectors written by D. Alexiev and published by . This book was released on 1987 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Neutron Transmutation Doped Silicon written by Jens Guldberg and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.
Download or read book Neutron Transmutation Doping of Semiconductor Materials written by Robert D. Larrabee and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Download or read book Technical Impediments to a More Effective Utilization of Neutron Transmutation Doped Silicon for High power Device Fabrication written by D. R. Meyers and published by . This book was released on 1980 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Neutron Transmutation Doping of Silicon at Research Reactors written by International Atomic Energy Agency and published by . This book was released on 2012 with total page 95 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication details the processes and history of neutron transmutation doping of silicon, particularly its commercial pathway, followed by the requirements for a technologically modern and economically viable production scheme and the current trends in the global market for semiconductor products. It should serve as guidelines on the technical requirements, involved processes and required quality standards for the transmission of sound practices and advice for research reactor managers and operators planning commercial scale production of silicon. Furthermore, a detailed and specific database of most of the worlds research reactor facilities in this domain is included, featuring their irradiation capabilities, associated production capacities and processing.
Download or read book Production of Detector Grade Silicon by Neutron Transmutation Doping written by Wv Ammon and published by . This book was released on 1984 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: High ohmic n-type silicon was produced from over-compensated, neutron transmutation doped P-type silicon. It was found that compensation levels of even more 70 % do not lead to the formation of p/n junctions across the wafer so that resistivities of up to 10 KOhmcm can be produced on a fairly reliable basis. The properties of NTD and conventionally doped silicon as well as their detector suitability are compared.
Download or read book Fabrication of Silicon Microcircuits by Neutron Transmutation Doping written by Carl N. Klahr and published by . This book was released on 1966 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Neutron Transmutation Doping of Isotopically Enriched Silicon written by Christopher Yuan-Ting Liao and published by . This book was released on 2006 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Neutron Transmutation Doped Silicon written by Jens Guldberg and published by . This book was released on 2014-01-15 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication of Semiconductor Devices by Neutron Transmutation Doping written by and published by . This book was released on 1962-12 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1995 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Neutron Transmutation Doping in Hydrogenated Amorphous Silicon written by H. Hamanaka and published by . This book was released on 1984 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: A neutron irradiation for thermal neutron flux density of 5 x 1011/cm2s and irradiation time of 10 hr was applied to hydrogenated amorphous silicon (a-Si:H). The density of 31P produced by the neutron transmutation doping (NTD) was estimated to be 1012/cm3. Dark and photo conductivities were measured before and after NTD in parallel with ESR measurements. The annealing behavior of the irradiation damage was studied up to the growth temperature of a-Si:H. Dark conductivity of the well-annealed NTD a-Si:H shows an activation type conduction above room temperature with activation energy of 0.69 eV.
Download or read book Production and Development of Neutron Transmutation Doped Silicon written by H. Herzer and published by . This book was released on 1984 with total page 13 pages. Available in PDF, EPUB and Kindle. Book excerpt: Considering the production of NTD-silicon our interest is focussing on market growth, application fields and questions like reactor capacity, costs and material quality. Market growth still is in a further steady increase and since IC application particularly CMOS devices are not expected to turn over to NTD-silicon there is plenty of reactor capacity available to follow the market increase in power device application.
Download or read book Neutron Transmutation Doping of Polycrystalline Silicon written by and published by . This book was released on 1976 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical vapor deposition (CVD) of doped silane has been used by others to deposit a polycrytalline silicon film (polysil) on metal or graphite substrates, but dopant migration to grain boundaries during deposition apparently prohibits attaining a uniform or desired dopant concentration. In contrast, we have used neutron transmutation doping to introduce a uniform phosphorus dopant concentration in commercially available undoped CVD polysil at doping concentrations greater than or equal to 2 x 1015 cm−3. Radiation damage annealing to 800°C did not indicate dopant migration. Carrier mobility increased with doping concentration and the minority carrier lifetime (MCL) appears to be comparable to that of neutron transmutation doped (NTD) single crystal Si. Application of this technique to photovoltaic solar cell fabrication is discussed.
Download or read book Impurity Doping Processes in Silicon written by F.F.Y. Wang and published by Elsevier. This book was released on 2012-12-02 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.
Download or read book Neutron Transmutation Doped Silicon written by Jens Guldberg and published by Springer. This book was released on 1981-12-01 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
