Download or read book Nanoscale Structural Characterization of Oxide and Semiconductor Heterostructures written by Joonkyu Park and published by . This book was released on 2018 with total page 133 pages. Available in PDF, EPUB and Kindle. Book excerpt: According to a recent report from International Technology Roadmap for Semiconductors (ITRS), semiconductor industry based on silicon Complementary metal-oxide-semiconductor (CMOS) technology is facing challenges in terms of making the device faster with higher density and lower power consumption. To overcome the challenges, various methodologies are attempted using different state variables instead of electric charges, for example, polarization, phase states, and electron spin information. Different materials can also be chosen instead of silicon, for example, carbon, complex metal oxides in 1D or 2D nanostructure formations. A different concept of operating devices is also another option, for example, single electron transistors, spintronics, and quantum electronics. A tremendous number of stages during microfabrication manufacturing for integrated circuits consist of a series of deposition and etching processes. During these processes, unknown problems can arise from the design of their structural geometry. For example, unwanted strain distribution from the electrode patterns can change the electric properties of underlying materials regarding the decrease in charge carrier mobility or increase in leakage current in dielectrics, which all occur in nanoscale. So, it is important to understand the effects of structural phenomena on the electronic properties of materials using nanoscale characterization. The first work shows the changes in electronic property in Si quantum dot devices fabricated on Si/SiGe heterostructure is discussed. The electrode deposition process on the heterostructure surface is necessary for the device operation, but the electrodes also induce external nanoscale strain fields. These strain fields are transferred to the substrate materials via electrode edges and change electronic band structure. The magnitudes of the strain and their impact on changing the band structure are studied. In the second project, the alignment of ferroelectric polarization nanodomains in PbTiO3/SrTiO3 (PTO/STO) superlattice heterostructures is discussed. The PTO/STO nanostructure was created using a focused-ion beam technique. The domain alignment was observed using the x-ray nanodiffraction. A thermodynamic theoretical approach calculates the free energy density of the system to understand the origin of domain alignment. In the final project, the origin of photoinduced domain transformation in PTO/STO superlattices is discussed. Charged carriers are excited by the above-bandgap optical illumination, and transported by the internal electric fields arising from depolarization fields. These photoexcited charge carriers eventually screen the depolarization fields, and the initial striped nanodomain patterns transform to a uniform polarization state. After the end of illumination, the striped nanodomains patterns recover for a period of seconds at room temperature. The transformation time depends on the optical intensity, and the recovery time depends on the temperature. A charge trapping model with a theoretical calculation reveals that the charge trapping is a dominant process for the domain transformation, and the de-trapping process is for the recovery. Simulated domain intensity changes are in good agreements with the X-ray diffraction data.
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Newnes. This book was released on 2013-04-11 with total page 829 pages. Available in PDF, EPUB and Kindle. Book excerpt: Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Chiara Manfredotti and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Structural and Electrical Characterization of Heterostructures Suitable for Future Nanoscale CMOS Devices written by Tobias Myrberg and published by . This book was released on 2004 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Structural and Electronic Properties of Nanoscale Semiconductor Device Structures Using Cross sectional Scanning Probe Microscopy written by Paul Arthur Rosenthal and published by . This book was released on 2002 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Emil S. Božin and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by F. Boscherini and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Maria Peressi and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by S. Sanguinetti and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by H. Renevier and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization written by Richard Haight and published by World Scientific. This book was released on 2012 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt: As we delve more deeply into the physics and chemistry of functional materials and processes, we are inexorably driven to the nanoscale. And nowhere is the development of instrumentation and associated techniques more important to scientific progress than in the area of nanoscience. The dramatic expansion of efforts to peer into nanoscale materials and processes has made it critical to capture and summarize the cutting-edge instrumentation and techniques that have become indispensable for scientific investigation in this arena. This Handbook is a key resource developed for scientists, engineers and advanced graduate students in which eminent scientists present the forefront of instrumentation and techniques for the study of structural, optical and electronic properties of semiconductor nanostructures.
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Lorenzo Rigutti and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 67 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Structural Characterization of Novel Semiconductor Heterostructures written by Jane Guizhen Zhu and published by . This book was released on 1991 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Structural and Electrical Characterization of Single Crystalline SrZrxTi1 xO3 Thin Films on Germanium written by Reza Matthew Moghadam and published by . This book was released on 2019 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to coupling crystalline oxides to semiconductors electrically, to realize functional behavior, is controlling the manner in which their bands align at the interfaces. This document reports on the three research projects on Crystalline Oxide/Semiconductor heterostructures. In the first project we applied principles of band-gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZrxTi1-xO3 and Ge, in which the band-gap of the former is increased with increasing Zr content x. Structural and electrical characterization of SrZrxTi1-xO3-Ge heterojunctions for x = 0.2 to 0.75 is performed and reported. The results demonstrate that by increasing the Zr content the band offset between the oxide an semiconductor can transition from type-II to type-I. In the second project ferroelectric materials integrated on semiconductors were particularly studied, which could lead to low-power field-effect devices that can be used for logic and memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x = 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm corresponding to an equivalent-oxide-thickness of just 1.0 nm exhibit a ~ 2 V hysteretic window in the capacitance-voltage characteristics. The development of ferroelectric MOS capacitors with ultrathin nanoscale gate thicknesses opens new perspectives for electronic devices. Finally, in the third project the interface trap density of the thin film SrZrxTi1-xO3 on Ge was studied and it was shown that the interface trap density of such structures can be dependent to the history of the junction and polarization state.
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Gema Martinez-Criado and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 83 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by G. Margaritondo and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
