Download or read book Morphological Evolution and Optical Properties of Germanium Thin Films Grown on Silicon by Molecular Beam Epitaxy written by Peter W. Deelman and published by . This book was released on 1996 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Morphological Evolution During Molecular Beam Epitaxy of Germanium germanium 001 and Silicon germanium 111 written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth Evolution and Properties of Surfaces Thin Films and Self Organized Structure Volume 648 written by Steven C. Moss and published by . This book was released on 2001-09-20 with total page 666 pages. Available in PDF, EPUB and Kindle. Book excerpt: A significant portion of these papers from a winter 2000 symposium examine materials and devices at the nano-scale, with work on self- organized structures as well as nano-patterned thin-film structures. Materials research in three-, two-, one-, and zero-dimensional objects is addressed. Other major themes include pattern formation on surfaces, magnetism in films, thin film nucleation and alloy formation, and diffusion and morphological evolution of surfaces and thin films. Quantum dots and quantum size effects, metal/silicon and germanium/silicon epitaxy, metal on semiconductor and semiconductor thin films, and semiconductor epitaxy are also discussed. Annotation copyrighted by Book News Inc., Portland, OR.
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2008 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book SiGe Based Technologies written by Y. Shiraki and published by Elsevier. This book was released on 1993-02-18 with total page 289 pages. Available in PDF, EPUB and Kindle. Book excerpt: The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: Wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, 'surfactants'; Analysis, both in situ and ex situ; Strain adjustment methods; High quality buffers; Modification of material properties by quantum wells and superlattices; Devices: Novel concepts, processing, modelling, demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, will provide a wealth of knowledge for all those interested in the future avenues of theory and applications in this field.
Download or read book Evolution of the Surface Morphology of Homoepitaxial Germanium 001 and Heteropitaxial Silicon 0 5 Germanium 0 5 germanium 001 Deposited by Molecular Beam Epitaxy at Reduced Temperatures written by Joseph Edward Van Nostrand and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We present comprehensive experimental results on the fashion in which the Ge(001) surface roughens as a function of film thickness, deposition temperature, and substrate miscut. The results allow us to write empirical expressions for feature spacing and roughness amplitude of the growing surface over a wide range of film thicknesses and deposition temperatures. We show that layer-by-layer growth on a singular surface in the presence of a small Ehrlich-Schwoebel leads to mound formation, and, from our experimental results, we extract an activation energy for the Ehrlich-Schwoebel barrier of $rm Esb{ES}approx 1meV$ for Ge(001). The effect of the Ehrlich-Schwoebel barrier does not diminish with an increase in deposition temperature, and hence the transition of the growth mode from multilayer to step flow is due to the competing process of smoothing becoming the dominant mechanism. Deposition on a vicinal surface miscut in the (011) results in the formation of elongated mounds bounded by ${105}$ facets. Thin $rm Sisb{0.5}Gesb{0.5}/Ge(001)$ films deposited in the presence of tensile strain result in the formation of Shockley partial misfit dislocations and a subsequent stacking fault. The stacking faults extend to the film surface, where they impede step flow. This results in step bunching and the formation of rectangular mounds on the surface. Annealing these films results in an inversion of the mounds into pits.
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Germanium silicon Strained Layers and Heterostructures written by Suresh C. Jain and published by . This book was released on 1994 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.
Download or read book Epitaxial Growth of Nitrides on Germanium written by Ruben Lieten and published by ASP / VUBPRESS / UPA. This book was released on 2009-09 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Germanium and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
Download or read book Photonics and Electronics with Germanium written by Kazumi Wada and published by John Wiley & Sons. This book was released on 2015-05-06 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: Representing a further step towards enabling the convergence of computing and communication, this handbook and reference treats germanium electronics and optics on an equal footing. Renowned experts paint the big picture, combining both introductory material and the latest results. The first part of the book introduces readers to the fundamental properties of germanium, such as band offsets, impurities, defects and surface structures, which determine the performance of germanium-based devices in conjunction with conventional silicon technology. The second part covers methods of preparing and processing germanium structures, including chemical and physical vapor deposition, condensation approaches and chemical etching. The third and largest part gives a broad overview of the applications of integrated germanium technology: waveguides, photodetectors, modulators, ring resonators, transistors and, prominently, light-emitting devices. An invaluable one-stop resource for both researchers and developers.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy of Ge Nanoclusters and InGaN Thin Films written by Bing Liu and published by . This book was released on 2002 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Undoped and Doped Silicon Thin Films Using Supersonic Molecular Jets written by Rajeev Malik and published by . This book was released on 1996 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Publications of the National Institute of Standards and Technology Catalog written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1991 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Heteroepitaxial Growth of Silicon and Germanium Thin Films on Flexible Metal Substrate by Magnetron Sputtering written by Renjie Wang and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: High mobility single-crystalline-like Ge thin films have been demonstrated on inexpensive polycrystalline metallic substrates buffered with oxide buffer layer. Doped films of p-type and n-type were fabricated using radio frequency magnetron sputtering on flexible epitaxial templates produced by ion beam assisted deposition (IBAD). Ideal conditions for fabricating p-type and n-type Ge thin films have been optimized based on their structure and Hall mobility. As defect density in Ge is directly related to the CeO2 buffer, the effect of CeO2 layer thickness and quality has been evaluated. A structural design of a p-i-n junction is proposed for solar cells on our flexible substrate based on electrical and crystal properties of Si and Ge thin films fabricated. In order to achieve an efficient harvesting of photo-generated free carriers, fabrication of substrates terminated with epitaxial conductive layers is studied.
