Download or read book Molecular Beam Epitaxial Growth of Lattice matched GaAsSbN GaAs and InGaAsSbN GaSb Quantum Wells for Optoelectronic Devices written by Sudhakar K. Bharatan and published by . This book was released on 2009 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses a growth and characterization study of thick gallium arsenic antimony nitrogen (GaAsSbN) layers lattice matched to gallium arsenic (GaAs) for solar cell applications and indium gallium arsenic antimony nitrogen / gallium antimony (InGaAsSbN/GaSb) single quantum well (SQW) heterostructures for optoelectronic applications. Includes detailed structural, vibrational, and optical characteristics of the structures. Presents the effects of in-situ annealing in As ambient and ex-situ annealing in nitrogen (N) ambient on the low temperature photoluminescence (PL) characteristics.
Download or read book Molecular Beam Epitaxial Growth of GaAsSbN GaAs Quantum Wells for 1 3 1 5 Um Emission written by David L. Jones and published by . This book was released on 2003 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single quantum well (QW) structures of GaAsSbN/GaAs have been grown by molecular beam epitaxy (MBE). Systematic study of the growth and low temperature photoluminescence (PL) spectra was carried out as a function of growth temperature, As/Sb ratio and N pressure. In-situ reflection high energy electron diffraction (RHEED) characterization was carried out to evaluate the growth process. The effect of annealing on the PL spectra and higher PL intensities was also examined. Significant blue shifts in PL peak positions with laser intensity were observed. PL wavelengths as long as 1.5 um were achieved.
Download or read book Type II W Quantum Wells for Mid infrared Emission written by Juno Yu-Ting Huang and published by . This book was released on 2008 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy and Characterization of GaAsN and Its Application to Quantum Dot Cascade Light Sources written by Carl H. Fischer and published by . This book was released on 2004 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gas Source Molecular Beam Epitaxial Growth of Quantum Wells for Electro optic Modulators written by Kumar T. Shiralagi and published by . This book was released on 1992 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Molecular Beam Epitaxial Growth of High Quality GaAs A1GaAs Heterostructures for Microwave Device Applications written by Paul A. Maki and published by . This book was released on 1986 with total page 626 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gas source Molecular Beam Epitaxy of GaInNAs and Ga In NP for Electronic and Optoelectronic Device Applications written by Huoping Xin and published by . This book was released on 2000 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxial Growth of GaAs on Ge Substrates for Future Photonic Device Application written by and published by . This book was released on 2010 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs is grown on Ge substrates by Molecular Beam Epitaxy (MBE) based on the fact that GaAs and Ge are lattice-matched materials. However, GaAs is a III-V compound semiconductor. When GaAs is grown on group IV Ge substrates, the anti-phase domain (APD) occurs due to randomness of group III and group V atoms grown as the first atomic layer at different seeding positions on Ge substrates. We investigate the growth conditions to obtain the large domains of GaAs epitaxial layer on Ge substrates. Migration-enhanced epitaxy (MEE) is used in our growth process. InAs QDs are grown on GaAs/Ge substrates having anti-phase domains (APDs). InAs QDs align in the specific crystallographic direction for each domain. The morphology of GaAs on Ge substrates is observed by atomic force microscopy (AFM). Large domain size of GaAs can be obtained by varying the GaAs thickness. TEM images of GaAs on Ge samples are also investigated. The defects at the domain interfaces are observed. The crystal quailty of GaAs is studied by X-ray diffraction (XRD) method. Ohmic contacts and Schottky contacts to GaAs on Ge samples are prepared by the thermal evaporation. The I-V characteristics of the samples are measured showing resistive combined materials while another samples act as a photodetector. Photoconductivity measurements of GaAs on Ge samples are conducted to study their spectral responses. Photoluminescence (PL) of GaAs grown on Ge substrates is investigated. PL result does not show any emission peaks from InAs QDs.
Download or read book Molecular Beam Epitaxial Growth and Characterization of Strained Quantum Wires written by Yu-Pei Chen and published by . This book was released on 1995 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gas Source Molecular Beam Epitaxy written by Morton B. Panish and published by Springer. This book was released on 1993-10-26 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.
Download or read book MBE Growth and Properties of GaAsSbN GaAs Single Quantum Well Heterostructures written by Liangjin Wu and published by . This book was released on 2005 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Investigates molecular beam epitaxy (MBE) growth of coherently strained galium arsenic antimony nitrogen/galium arsenic (GaAsSbN/GaAs) single quantum well (SQW) heterostructures with nitrogen composition. Uses an elemental solid source MBE system with radio frequency (RF) plasma for the growth. Investigates a comprehensive and systematic study of the effect of important growth conditions on the structural and optical properties of the heterostructures as well as on the composition of the quantum wells (QW). Conditions include the source shutter opening sequences, which expose the substrate to antimony (Sb) flux prior to the QW growth and simultaneously open all source shutters; the substrate temperature (400-490 °C); the annealing ambient (ex-situ annealing in a nitrogen ambient and in-situ annealing in an arsenic overpressure); and the annealing temperature (650-800 °C).
Download or read book Defect Creation in InGaAs GaAs Multiple Quantum Wells written by Matthias Karow and published by . This book was released on 2014 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt: Multiple quantum well (MQW) structures have been employed in a variety of solid state devices. The InGaAs/GaAs material system is of special interest for many optoelectronic applications. This study examines epitaxial growth and defect creation in InGaAs/GaAs MQWs at its initial stage. Correlations between physical properties, crystal perfection of epitaxial structures, and growth conditions under which desired properties are achieved appear as highly important for the realization and final performance of semiconductor based devices. Molecular beam epitaxy was utilized to grow InGaAs/GaAs MQW structures with a variation in deposition temperature Tdep among the samples to change crystalline and physical properties. High resolution x-ray diffraction and transmission electron microscopy were utilized to probe crystal properties, whereas photoluminescence spectroscopy evaluated optical response. An optimal growth temperature Tdep=505 & deg;C was found for 20% In composition. The density of 60 & deg; primary and secondary dislocation loops increased continuously at lower growth temperatures and reduced crystal perfection, as evaluated by lateral and vertical coherence lengths and diffuse scattering in reciprocal space maps. Likewise, the strength of non-radiative Shockley-Read-Hall recombination increased as deposition temperature was reduced. Elevated deposition temperature led to InGaAs decay in the structures and manifested in different crystalline defects with a rather isotropic distribution and no lateral ordering. High available thermal energy increased atomic surface diffusivity and resulted in growth surface instability against perturbations, manifesting in lateral layer thickness undulations. Carriers in structures grown at elevated temperature experience localization in local energy minima. InGaAs/GaAs MQW structures reveal correlation between their crystal quality and optical properties. It can be suggested that there is an optimal growth temperature range for each In composition with high crystal perfection and best physical response.
Download or read book The molecular beam epitaxial growth of high quality GaAs AlGaAs heterostructures for microwave device applications written by Paul A. Maki and published by . This book was released on 1986 with total page 281 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Papers from the 16th North American Conference on Molecular Beam Epitaxy written by North American Conference on Molecular Beam Epitaxy (16, 1997, Ann Arbor, Mich.) and published by . This book was released on 1998 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy Growth of AlGaN GaN Quantum Wells and Investigation of Excitonic and Intersubband Transitions written by Ian Friel and published by . This book was released on 2005 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: This dissertation addresses the epitaxial growth, structural and optoelectronic properties, and novel device applications of Al x Ga 1-x N/GaN multiple quantum wells. The investigated structures were grown both heteroepitaxially and homoepitaxially by plasma-assisted molecular beam epitaxy. Structural properties were determined by high resolution x-ray diffraction, scanning electron microscopy and atomic force microscopy. Excitonic recombination and absorption was investigated by a combination of photoluminescence, lateral photocurrent spectroscopy and electroabsorption spectroscopy.
Download or read book Laser assisted Molecular Beam Epitaxial Growth of GaAs on Si 100 written by F. J. Grunthaner and published by . This book was released on 1988 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxial GaAs AlxGa xAs Heterostructures for Microwave Applications written by Wen I. Wang and published by . This book was released on 1982 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
