Download or read book Molecular Beam Epitaxial Growth of GaAsSbN GaAs Quantum Wells for 1 3 1 5 Um Emission written by David L. Jones and published by . This book was released on 2003 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single quantum well (QW) structures of GaAsSbN/GaAs have been grown by molecular beam epitaxy (MBE). Systematic study of the growth and low temperature photoluminescence (PL) spectra was carried out as a function of growth temperature, As/Sb ratio and N pressure. In-situ reflection high energy electron diffraction (RHEED) characterization was carried out to evaluate the growth process. The effect of annealing on the PL spectra and higher PL intensities was also examined. Significant blue shifts in PL peak positions with laser intensity were observed. PL wavelengths as long as 1.5 um were achieved.

Download or read book Gas Source Molecular Beam Epitaxial Growth of Quantum Wells for Electro optic Modulators written by Kumar T. Shiralagi and published by . This book was released on 1992 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Type II W Quantum Wells for Mid infrared Emission written by Juno Yu-Ting Huang and published by . This book was released on 2008 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gas Source Molecular Beam Epitaxy written by Morton B. Panish and published by Springer Science & Business Media. This book was released on 2013-03-07 with total page 441 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.

Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Newnes. This book was released on 2012-12-31 with total page 745 pages. Available in PDF, EPUB and Kindle. Book excerpt: This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a ‘how to’ on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. Condenses fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community

Download or read book Molecular Beam Epitaxy and Characterization of GaAsN and Its Application to Quantum Dot Cascade Light Sources written by Carl H. Fischer and published by . This book was released on 2004 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Molecular Beam Epitaxy written by Brian R. Pamplin and published by Pergamon. This book was released on 1980 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2668 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics and Applications of Quantum Wells and Superlattices written by E.E. Mendez and published by Springer. This book was released on 1987 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April 21-May 1, 1987. This course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettore Majorana Center for Scientific Culture. In the last ten years, we have seen an enormous increase in re search in the field of Semiconductor Heterostructures, as evidenced by the large percentage of papers presented in recent international conferences on semiconductor physics. Undoubtfully, this expansion has been made possible by dramatic advances in materials preparation, mostly by molecular beam epitaxy and organometallic chemical vapor deposition. The emphasis on epitaxial growth that was prevalent at the beginning of the decade (thus, the second course of the School, held in 1983, was devoted to Molecular Beam Epitaxy and Heterostructures) has given way to a strong interest in new physical phenomena and new material structures, and to practical applications that are already emerging from them.

Download or read book Experimental Investigations of Transport and Optical Properties of 3 5 Quantum Well Structures Grown Via Molecular Beam Epitaxy Under Optimal Growth Conditions written by and published by . This book was released on 1989 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zero field mobilities in GaAs/A1(x)Ga(1-x)As(100) inverted HEMT structures in excess of 100,000 sq cm/V-Sec at LN2 temperatures have been achieved . The possibility of high mobilities in square single quantum wells with modulation doping on the inverted interface side only is demonstrated. Photoluminescences linewidth dependence on the square single quantum well width shows inverse proportion rather than the inverse cubic proportion behavior expected from the popularly used notion of well width fluctuations. The observed behavior is shown to be consistent with fluctuations in the band edge discontinuity (i.e. well depth) arising from in-plane fluctuations in the alloy composition of the A1xGa(1-x)As barrier layers in high quality structures. Influence of an electric field across single and coupled-double quantum wells on their optical characteristics is examined theoretically and through photoluminescence, photocurrent, electroreflectance, photoreflectance and Photovoltage measurements. Exploiting growth conditions controlled thermodynamic and kinetic effects on facet formation and inter-facet migration, a unique in-situ method for realization of quantum wire and quantum box structures without the need for lithography or direct-write patterning on such small dimensions is demonstrated. Finally, some initial results on resonant tunneling diodes are reported.

Download or read book Molecular Beam Epitaxial Growth and Characterization of Strained Quantum Wires written by Yu-Pei Chen and published by . This book was released on 1995 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties of III V Quantum Wells and Superlattices written by P. K. Bhattacharya and published by IET. This book was released on 1996 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.

Download or read book Gas source Molecular Beam Epitaxial Growth and Characterization of the Al In Ga NP GaP Material System and Its Applications to Light emitting Diodes written by Vladimir Odnoblyudov and published by . This book was released on 2006 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nitrogen incorporation into GaAs has received much attention in the last decade, because of its application to long-wavelength lasers. However, nitrogen incorporation into GaP (100) has not received much attention to date despite the promising application of this material system to yellow-amber-red light-emitting diodes. In order to investigate the not yet well-studied (Al, In, Ga)NP material system, we use gas-source molecular beam (MBE), in which nitrogen radicals are used as nitrogen precursor, to grow these mixed group-V alloy semiconductors with excellent crystallinity. This dissertation is divided into two major parts. In the first part we describe the growth and characterization of the (Al, In, Ga)NP material system. Optical and structural properties of GaNP bulk layers, AlGaNP bulk layers, and InGaNP quantum wells are studied. The dependence of the GaNP band gap vs. nitrogen concentration and temperature dependent PL are analyzed. For AlGaNP layers, using a thermodynamic approach we explain the difference between nitrogen incorporation into GaP and AlP. The dependence of the emission wavelength vs. nitrogen and indium compositions is studied for InGaNP QWs. The electron effective mass is determined for InGaNP materials with different indium concentration. The conduction and valence band offsets are calculated for the InGaNP/GaP heterojunction. In the second part, we describe LED chip fabrication and contacts optimization. development of n-type and p-type contacts is discussed. A description of LED chip processing optimization is given for a p-i-n diode structure. The band offsets are compared for (Al, In, Ga)NP-based LED structures and conventional AlInGaP-based LED structures; they are 2-3 times higher in LEDs based on the (Al, In, Ga)NP material system. Growth and fabrication results for bulk GaNP-based amber LEDs are discussed. Color stability (electroluminescence peak wavelength shift vs. current) is compared for GaNPbased LEDs and AlInGaP-based LEDs; the wavelength shift of (Al, In, Ga)NP-based LED chips is ~ 6 times less than that of AlInGaP-based LED chips, in the drive current range of 10 - 60 mA. The influence of In concentration in InGaNP QWs on EL properties of LED chips is reported. Single and multiple InGaNP QW-based LEDs are studied.

Download or read book Molecular Beam Epitaxy Growth of AlGaN GaN Quantum Wells and Investigation of Excitonic and Intersubband Transitions written by Ian Friel and published by . This book was released on 2005 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: This dissertation addresses the epitaxial growth, structural and optoelectronic properties, and novel device applications of Al x Ga 1-x N/GaN multiple quantum wells. The investigated structures were grown both heteroepitaxially and homoepitaxially by plasma-assisted molecular beam epitaxy. Structural properties were determined by high resolution x-ray diffraction, scanning electron microscopy and atomic force microscopy. Excitonic recombination and absorption was investigated by a combination of photoluminescence, lateral photocurrent spectroscopy and electroabsorption spectroscopy.

Download or read book Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy written by Nikolai N. Ledentsov and published by Springer Science & Business Media. This book was released on 1999-07-02 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion. It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.

Download or read book Molecular Beam Epitaxy Growth and Characterization of ZnO based Layers and Heterostructures written by Abdelhamid Abdelrehim Mahmoud Elshaer and published by Cuvillier Verlag. This book was released on 2008 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Growth Principles and Applications Volume 570 written by Albert-László Barabási and published by . This book was released on 1999-08-26 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.