Download or read book Molecular Beam Epitaxial Growth and Characterization of the Manganese based Heusler Alloy Films for Application in Spintronics written by Xuying Dong and published by . This book was released on 2005 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxial Growth and Characterization of Single Crystal Ferromagnetic Shape Memory Nickel manganese gallium Films written by Jianwei Dong and published by . This book was released on 2004 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxial Growth and Phase Transformation Behaviors of Heusler type Single Crystal Ferromagnetic Shape Memory Thin Films written by Chung-Ping Shih and published by . This book was released on 2005 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2006 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxial Growth and Characterization of InGaN Based Alloys Heterostructures and Multi quantum Wells written by Rajminder Singh and published by . This book was released on 1997 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth by Molecular Beam Epitaxy and Characterization of AlxGA1 xN Alloy Films and Heterostructures written by Dimitris Korakakis and published by . This book was released on 1998 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Heusler Alloys written by Claudia Felser and published by Springer. This book was released on 2015-11-12 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives an overview of the physics of Heusler compounds ranging from fundamental properties of these alloys to their applications. Especially Heusler compounds as half-metallic ferromagnetic and topological insulators are important in condensed matter science due to their potential in magnetism and as materials for energy conversion. The book is written by world-leaders in this field. It offers an ideal reference to researchers at any level.
Download or read book Molecular Beam Epitaxy Growth and Characterization of Ultra wide Bandgap Materials and Devices written by Ryan Lowry Page and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultrawide bandgap (UWBG) semiconductors, especially those in the III-nitride family of materials with their exceptional electronic, optical, and thermal properties, will play a highly important role in the next generation of ultraviolet photonic and high power electronic devices. Currently, the performance and utilization of many UWBG materials in device applications is hampered by fundamental materials challenges with growth and doping. This thesis covers the growth and materials properties of two III-nitride UWBG materials, primarily grown by molecular beam epitaxy (MBE). First, hexagonal boron nitride, a two dimensional, layered material with unique optical properties and potential applications in van der Waals-based devices and heterostructures will be discussed. Second, recent work on aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) alloys will be presented.This work begins with an investigation into the high temperature MBE growth of hBN on several substrates. The layers show improved quality over previous reports and are thoroughly characterized. Next, the optical properties of these hBN films, as well as those of bulk doped hBN crystals, are investigated by cryogenic deep UV photoluminescence. Several new emission characteristics are identified and studied in these hBN materials, including carbon-induced luminescence, the direct bandgap transition of monolayer hBN, and single photon emission from hBN defects. Transitioning to the AlGaN platform, the growth of AlN and AlGaN by MBE on high quality single crystalline bulk AlN substrates is outlined and expanded upon, including an analysis of AlGaN doping with Si and Mg. The MBE growth, doping, and electron transport of heavily Si-doped, high Al mole fraction Al- GaN on bulk AlN is investigated, revealing upper practical limits to both Al mole fraction and Si doping density for high conductivity n-type films. In addition to this work on material growth and characterization, several AlGaN-based devices, an optically pumped UV laser and a Schottky barrier diode, will be introduced and discussed. These devices directly benefit from the preceding advances in AlGaN growth and doping. Finally, initial exploratory investigations and results on cubic phase BN as well as boron aluminum nitride alloys will be presented.
Download or read book Epitaxial Growth and Characterization of Narrow Bandgap III V Semiconductors and Related Semimetals written by Sukgeun Choi and published by . This book was released on 2006 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Thin Films of the Heusler Alloy NiMnSb and Its Application to Magnetoresistive Multilayer Structures written by Juan A. Caballero and published by . This book was released on 1997 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Newnes. This book was released on 2012-12-31 with total page 745 pages. Available in PDF, EPUB and Kindle. Book excerpt: This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a ‘how to’ on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. Condenses fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community
Download or read book Molecular Beam Epitaxial Growth and Characterization of the Modulated Structures for Detector Applications written by Jie Piao and published by . This book was released on 1991 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Epitaxial Manganese Silicide Thin Films written by Mirko Trabel and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Mn doped InP Molecular Beam Epitaxial Layers written by John Ogawa Borland and published by . This book was released on 1981 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Construction of the Preparation Growth and Characterization Chamber of Molecular Beam Epitaxy System and Some Studies of the Iron gallium Nitride System with a View to Spintronics Applications written by I Pui Hui and published by . This book was released on 2007 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxial Growth Characterization and Electronic Device Processing of HgCdTe HgZnTe Related Heterojunctions and HgCdTe CdTe Superlattices written by and published by . This book was released on 1989 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research program on the growth by Molecular Beam Epitaxy of Hg- based alloys and heterostructures carried out in the Microphysics Laboratory at the University of Illinois at Chicago and supported by this contract has been extremely successful. Tremendous progress has been achieved towards the improvement of HgCdTe and related heterostructures in terms of structural, electrical and optical properties. A very important step has been passed through in the control of the twinning process during the growth in the (111)B orientation. Furthermore, it has been clearly established for the first time that twins or related dislocations are acting as acceptors in HgCdTe and are detrimental for diode performance, what was suspected but never proved until our conclusive experiments.
Download or read book Molecular Beam Epitaxial Growth and Characterization of Strained Quantum Wires written by Yu-Pei Chen and published by . This book was released on 1995 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt:
