Download or read book Modulation doped Field effect Transistors written by Heinrich Daembkes and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modulation doped Field effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Noise in Modulation doped Field effect Transistors written by Kuo-Wei Liu and published by . This book was released on 1994 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Principles and Performance of Modulation doped Field Effect Transistors for Low Noise Microwave Amplification written by Lovell H. Camnitz and published by . This book was released on 1986 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modulation doped Field effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modelling Modulation Doped Field Effect Transistors for Use with the TECAP System written by Kenneth Robert Cioffi and published by . This book was released on 1984 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design and Performance of Modulation doped Field Effect Transistors written by Steven Lawrence Yellen and published by . This book was released on 1986 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modulation Doped Field Effect Transistors for Microwave Device Applications written by Norman C. Tien and published by . This book was released on 1993 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Fabrication and Characterization of Modulation doped Field effect Transistors written by Hyunchang Park and published by . This book was released on 1989 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Modulation doped Field effect Transistors with Gate Lengths Down to 600 Angstroms written by Paul Raymond De la Houssaye and published by . This book was released on 1988 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Complementary Modulation doped Field effect Transistor written by Kanji Yoh and published by . This book was released on 1988 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modulation doped Field Effect Transistors for High power Microwave Applications written by Ronald Waldo Grundbacher and published by . This book was released on 1997 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: The need for high-power, low-noise transistors operating at frequencies of 1GHz and above has accelerated over the past several years, because applications in consumer markets, including telecommunications products, have increased dramatically. Transistors in the silicon system are having difficulty providing the high-power, low-noise characteristics at operation above 1 GHz. Transistors based on InP and GaAs, which include HBTs, MESFETs, and HEMTs, have proven to be excellent devices and can provide high-power, low-noise capabilities at frequencies of 100 GHz and beyond. Issues of importance for high-power microwave transistors include breakdown mechanisms, linearity, and material selection.
Download or read book Development of Non alloyed Modulation doped Field effect Transistors written by Pheng-Piao Liao and published by . This book was released on 1990 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Quantum Model of the Modulation Doped Field Effect Transistor written by Harry Lee Wiederspahn and published by . This book was released on 1992 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Highly Strained Ga1 xInxAs Al0 48In0 52As Modulation Doped Field Effect Transistors written by Kyung Bae Chough and published by . This book was released on 1992 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modulation Doped Field Effect Transistors in Strained Layer Superlattices written by S. M. Bedair and published by . This book was released on 1986 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the mm-wave device investigation the limitations imposed by parasitic elements upon high-frequency performance were investigated. It was determined that the high field domain that forms in the channel of field-effect type transistors presents a limitation to high frequency operation. The domain capacitance creates a complex pole in the unilateral gain that results in a 12 db/octave roll-off above the resonant frequency of the pole. The various factors that effect this pole have been investigated. Current FETs are limited to upper operation frequencies of about 150-160 GHz. The GaAs(1-y)P(y)-Ga(1-yInx)As material system is proposed for potential HEMT applications. This structure is made of strained layers that can be grown with y = 2x free from dislocations, and lattice matched to a GaAs substrate. HEMT devices fabricated in such structure have several potential advantages over the conventional AlGaAs-GaAs HEMT. First, the active layer is Ga(1-x)In(x)As instead of GaAs. Thus, the potential exists for higher room temperature mobilities with larger saturation velocities and a larger conduction band edge discontinuity. An advantage over the Ga(0.47)In(0.53)As-InP system is that the composition of the Ga(1-x)In(x)As in the proposed structure can be varied to optimize the HEMT performance, whereas the Ga(0.47)In(0.53)As has a fairly low bandgap for optimum FET devices.
Download or read book The Realization of Ultra High Speed Modulation doped Field Effect Transistors written by Loi Dinh Nguyen and published by . This book was released on 1989 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt:
