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Book Hydride vapour phase epitaxy growth  crystal properties and dopant incorporation in gallium nitride

Download or read book Hydride vapour phase epitaxy growth crystal properties and dopant incorporation in gallium nitride written by Patrick Hofmann and published by BoD – Books on Demand. This book was released on 2018-08-15 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation employs doping to investigate basic gallium nitride (GaN) crystal properties and to solve challenges of the hydride vapour phase epitaxy (HVPE) growth process. Whereas the first chapter is a short introduction to the history of the GaN single crystal growth, the 2nd chapter introduces to current crystal growth techniques, discusses properties of the GaN material system and the resulting influence on the applicable crystal growth techniques. HVPE, as a vapour phase epitaxy crystal growth method will be explained in greater detail, with focus on the used vertical reactor and its capabilities for doping. The 3rd chapter then focusses on point defects in GaN, specifically on intentionally introduced extrinsic point defects used for doping purposes, i.e. to achieve p-type, n-type or semi-insulating behaviour. Different dopants will be reviewed before the diffusion of point defects in a solid will be discussed. The in-situ introduction of iron, manganese, and carbon during crystal growth is employed in chapter 4 to compensate the unintentional doping (UID) of the GaN crystals, and therefore to achieve truly semi-insulating behaviour of the HVPE GaN. However the focus of this chapter lies on the characterisation of the pyroelectric coefficient (p), as semi-insulating properties are a necessary requirement for the applied Sharp-Garn measurement method. The creation of tensile stress due to in-situ silicon doping during GaN crystal growth is the topic of the 5th chapter. The tensile stress generation effect will be reproduced and the strain inside the crystal will be monitored ex-situ employing Raman spectroscopy. The n-type doping is achieved by using a vapour phase doping line and a process is developed to hinder the tensile strain generation effect. The 6th chapter concentrates on the delivery of the doping precursor via a solid state doping line, a newly developed doping method. Similar to chapter 5, the doping line is characterised carefully before the germanium doping is employed to the GaN growth. The focus lies on the homogeneity of the germanium doping and it is compared compared to the silicon doping and the vapour phase doping line. Benefits and drawbacks are discussed in conjunction with the obtained results. The germanium doping via solid state doping line is applied to the HVPE GaN growth process to measure accurately growth process related properties unique to the applied set of GaN growth parameters.

Book Low dimensional Nitride Semiconductors

Download or read book Low dimensional Nitride Semiconductors written by Bernard Gil and published by . This book was released on 2002 with total page 494 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronics and electronics of the years to come are likely to change dramatically. Most of the outdoor lighting systems will be replaced by light-emitting diodes that operate in the whole visible part of the electromagnatic spectrum. Transistors operating at high frequency and with high power are under development and likely to hit the market very rapidly. Compact solid-state lasers that operate in the near-ultraviolet range are going to be utilized for such widely used applications as read-write tasks in printer and CD drives. Ultraviolet detectors will be used at a wide scale for many application, ranging from flame detectors to medical instruments. This book concerns itself with the questions why nitride semiconductors are so promising over such a wide range of applications, what the current issues are in the research laboratories, and what the prospects of new electronic devices are in the dawn of the twenty-first century.

Book Gallium Nitride enabled High Frequency and High Efficiency Power Conversion

Download or read book Gallium Nitride enabled High Frequency and High Efficiency Power Conversion written by Gaudenzio Meneghesso and published by Springer. This book was released on 2018-05-12 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

Book Compound Semiconductors 2004

Download or read book Compound Semiconductors 2004 written by J.C. Woo and published by CRC Press. This book was released on 2005-04-01 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 2004 was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to September 16, 2004. It attracted over 180 submissions from leading scientists in academic and industrial research institutions, and remains a major forum for t

Book JJAP Letters

    Book Details:
  • Author :
  • Publisher :
  • Release : 2001
  • ISBN :
  • Pages : 982 pages

Download or read book JJAP Letters written by and published by . This book was released on 2001 with total page 982 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Nitride Semiconductors

    Book Details:
  • Author : Pierre Ruterana
  • Publisher : John Wiley & Sons
  • Release : 2003-06-09
  • ISBN : 9783527403875
  • Pages : 696 pages

Download or read book Nitride Semiconductors written by Pierre Ruterana and published by John Wiley & Sons. This book was released on 2003-06-09 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.

Book Optoelectronic Devices  III Nitrides

Download or read book Optoelectronic Devices III Nitrides written by Mohamed Henini and published by Elsevier. This book was released on 2004-12-17 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. - Broad review of optoelectronic applications of III-V nitrides

Book Electrical   Electronics Abstracts

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book III Nitride Based Semiconductor Electronics and Optical Devices and Thirty Fourth State of the Art Program on Compound Semiconductors  SOTAPOCS XXXIV

Download or read book III Nitride Based Semiconductor Electronics and Optical Devices and Thirty Fourth State of the Art Program on Compound Semiconductors SOTAPOCS XXXIV written by F. Ren and published by The Electrochemical Society. This book was released on 2001 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Springer Handbook of Electronic and Photonic Materials

Download or read book Springer Handbook of Electronic and Photonic Materials written by Safa Kasap and published by Springer. This book was released on 2017-10-04 with total page 1536 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second, updated edition of this essential reference book provides a wealth of detail on a wide range of electronic and photonic materials, starting from fundamentals and building up to advanced topics and applications. Its extensive coverage, with clear illustrations and applications, carefully selected chapter sequencing and logical flow, makes it very different from other electronic materials handbooks. It has been written by professionals in the field and instructors who teach the subject at a university or in corporate laboratories. The Springer Handbook of Electronic and Photonic Materials, second edition, includes practical applications used as examples, details of experimental techniques, useful tables that summarize equations, and, most importantly, properties of various materials, as well as an extensive glossary. Along with significant updates to the content and the references, the second edition includes a number of new chapters such as those covering novel materials and selected applications. This handbook is a valuable resource for graduate students, researchers and practicing professionals working in the area of electronic, optoelectronic and photonic materials.

Book Vertical GaN and SiC Power Devices

Download or read book Vertical GaN and SiC Power Devices written by Kazuhiro Mochizuki and published by Artech House Publishers. This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices.Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.

Book Chemical Abstracts

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Physics Briefs

Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Advanced Semiconductor and Organic Nano Techniques Part II

Download or read book Advanced Semiconductor and Organic Nano Techniques Part II written by Hadis Morkoc and published by Academic Press. This book was released on 2003-06-26 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Acta Physica Polonica

Download or read book Acta Physica Polonica written by and published by . This book was released on 2006 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Ceramic Abstracts

Download or read book Ceramic Abstracts written by and published by . This book was released on 1999 with total page 950 pages. Available in PDF, EPUB and Kindle. Book excerpt: