Download or read book Modeling Validation and Control of Advanced Chemical Vapor Deposition Processes written by and published by . This book was released on 2000 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: AASERT supported work on the following: Modeling of multiple layer stacks in thin film growth; Modeling of energy input terms in electromagnetic excitation of materials; PRS monitoring of multiple layer stacks in thin film growth; construction and testing of a prototype high pressure organometallic chemical vapor deposition (HPOMCVD) reactor; Reduced order surface kinetic models for GaP growth; computational methods for feedback control in nonlinear systems.
Download or read book Modeling and Control of Advanced Chemical Vapor Deposition Processes The Control of Defects in Mixed III V Compound Heterstructures written by and published by . This book was released on 2000 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: We report progress on the construction and testing of two high pressure organometallic chemical vapor deposition (HPOMCVD) reactors, real time feedback control of pulsed chemical beam epitaxy, reduced order model feedback control design, defect formation in heteroepitaxial growth of films, and remote plasma processing.
Download or read book Development and Validation of Mathematical Models for Chemical Vapor Deposition Processes written by Dewei Zhu and published by . This book was released on 1990 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling of Chemical Vapor Deposition of Tungsten Films written by Chris R. Kleijn and published by Birkhäuser. This book was released on 2013-11-11 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor equipment modeling has in recent years become a field of great interest, because it offers the potential to support development and optimization of manufacturing equipment and hence reduce the cost and improve the quality of the reactors. This book is the result of two parallel lines of research dealing with the same subject - Modeling of Tungsten CVD processes -, which were per formed independently under very different boundary conditions. On the one side, Chris Kleijn, working in an academic research environment, was able to go deep enough into the subject to laya solid foundation and prove the validity of all the assumptions made in his work. On the other side, Christoph Werner, working in the context of an industrial research lab, was able to closely interact with manufacturing and development engineers in a modern submicron semiconductor processing line. Because of these different approaches, the informal collaboration during the course of the projects proved to be extremely helpful to both sides, even though - or perhaps because - different computer codes, different CVD reactors and also slightly different models were used. In spite of the inconsistencies which might arise from this double approach, we feel that the presentation of both sets of results in one book will be very useful for people working in similar projects.
Download or read book Mathematical Modeling of Chemical Vapor Deposition Processes and Its Application to Thin Film Technology written by Norman Washington Loney and published by . This book was released on 1991 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: A number of workers in the field of Chemical vapor deposition (CVD) have presented mathematical models in the literature. Some workers were able to produce analytical expressions for the interwafer concentration profile. These analytical expressions were based entirely on zero or first order chemical reaction rates. Until now, it appears that a chemical reaction rate expression that is not zero or first order directly, must be handled by a numerical scheme. Presented herein is a mathematical model with an analytical interwafer concentration profile. This concentration profile is neither zero nor first order but shifts from zero to first order as the reactor is axially traversed. The approach used avoids the sometimes cumbersome numerical schemes, while dealing effectively with non-integer order rate expressions characteristic to CVD kinetics. This approach is also amenable to higher order rate expressions such as kCn, n> 1. We employ a boundary perturbation technique to reduce a nonlinear system of partial differential equations that was otherwise non-tractable analytically. Essentially, analytical expressions are derivable for the concentration profile in the interwafer region regardless of the kinetic expression's non-linearity. The proposed model was tested with independently published experimental data. In each case the model predictions compare favorable with the experimental data. Results show that deposition rates of: silicon nitride from dichlorosilane and ammonia, silicon from silane and silicon dioxide from tetraethylorthosilicate can be explained using a shifting order reaction. Further, the neglect of gas phase reactions did not affect the predicted deposition rates. Concurrence with experimental results on thickness uniformity (radial) is achieved using this model. Control of nonuniformity on the wafers during a CVD process depends on the magnitude of the Sherwood number. Both experimental data and the proposed model show that surface uniformity improves with diminishing Sherwood numbers. In this work, it is demonstrated (at least qualitatively) that surface chemical reaction provides the controlling resistance. For the range of concentrations and low pressures used in CVD the interwafer Damkzh̲ler number is smaller than unity. If the ratio of reaction velocity to diffusion velocity is larger than unity, uniform surface deposition cannot be expected. This implies the surface process is controlling.
Download or read book Fundamental Gas phase and Surface Chemistry of Vapor phase Deposition II and Process Control Diagnostics and Modeling in Semiconductor Manufacturing IV written by Electrochemical Society. High Temperature Materials Division and published by The Electrochemical Society. This book was released on 2001 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modelling and Control of Silicon and Germanium Thin Film Chemical Vapor Deposition written by Scott Anderson Middlebrooks and published by . This book was released on 2001 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Mathematical Modeling of Chemical Vapor Deposition Processes and Its Application to Thin Film Technology written by Norman W. Loney and published by . This book was released on 1991 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling and Control of Thin Film Growth in a Chemical Vapor Deposition Reactor written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This work describes the development of a mathematical model of ahigh-pressure chemical vapor deposition (HPCVD) reactor and nonlinearfeedback methodologies for control of the growth of thin films in thisreactor. Precise control of the film thickness and composition is highlydesirable, making real-time control of the deposition process veryimportant. The source vapor species transport is modeled by the standardgas dynamics partial differential equations, with species decomposition reactions, reduced down to a small number of ordinary differential equationsthrough use of the proper orthogonal decomposition technique. This systemis coupled with a reduced order model of the reactions on the surfaceinvolved in the source vapor decomposition and film deposition on thesubstrate wafer. Also modeled is the real-time observation technique usedto obtain a partial measurement of the deposition process. The utilization of reduced order models greatly simplifies the mathematical formulation of the physical process so it can be solved quickly enough to beused for real-time model-based feedback control. This control problem isfairly complicated, however, because the surface reactions render the modelnonlinear. Several control methodologies for nonlinear systems are studiedin this work to determine which performs best on test examples similar tothe HPCVD problem. One chosen method is extended to a tracking control toforce certain film growth properties to follow desired trajectories. Thenonlinear control method is used also in the development of a stateestimator which uses the nonlinear partial observation of the nonlinearsystem to create an estimate of the actual state, which the feedback controlformula then can use to guide the HPCVD system. The nonlinear trackingcontrol and estimator techniques are implemented on the HPCVD model and theresults analyzed as to the effectiveness of the reduced order model andnonlinear control.
Download or read book Modeling and Control of Plasma Enhanced Chemical Vapor Deposition written by Antonios Armaou and published by . This book was released on 1998 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book New Methods Mechanisms and Models of Vapor Deposition Volume 616 written by Haydn N. G. Wadley and published by Mrs Proceedings. This book was released on 2000-09-25 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Chemical Vapor Deposition written by S Neralla and published by BoD – Books on Demand. This book was released on 2016-08-31 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an overview of chemical vapor deposition (CVD) methods and recent advances in developing novel materials for application in various fields. CVD has now evolved into the most widely used technique for growth of thin films in electronics industry. Several books on CVD methods have emerged in the past, and thus the scope of this book goes beyond providing fundamentals of the CVD process. Some of the chapters included highlight current limitations in the CVD methods and offer alternatives in developing coatings through overcoming these limitations.
Download or read book Proceedings of the Thirteenth International Conference on Chemical Vapor Deposition written by Theodore M. Besmann and published by The Electrochemical Society. This book was released on 1996 with total page 922 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling and Control for Rapid Thermally Driven Deposition Processes written by and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objectives of this program were the study of the chemistry of YBCO thin film deposition by MOCVD, and the model-based control of MOCVD reactors. Model reduction techniques were applied to chemical vapor deposition (CVD) of YBCO thin films. This work has paralleled some of the work of Goodwin et al at Caltech sponsored under the DARPA VIP Phase I program, but with significantly different approach and emphasis. Under this program, the above chemistry was investigated from first principles using quantum chemistry computations (led by MIT). The kinetic and thermodynamic information obtained from these studies were used to generate a kinetic mechanism, which was then coupled to transport models for fluid flow, heat and mass transfer in CVD reactors. These coupled reaction-transport models were used to derive reduced order models for process control.
Download or read book Chemical Vapour Deposition written by Anthony C. Jones and published by Royal Society of Chemistry. This book was released on 2009 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The book is one of the most comprehensive overviews ever written on the key aspects of chemical vapour deposition processes and it is more comprehensive, technically detailed and up-to-date than other books on CVD. The contributing authors are all practising CVD technologists and are leading international experts in the field of CVD. It presents a logical and progressive overview of the various aspects of CVD processes. Basic concepts, such as the various types of CVD processes, the design of CVD reactors, reaction modelling and CVD precursor chemistry are covered in the first few"--Jacket
Download or read book Multi scale Modeling on Select Chemical Vapor Deposition Processes written by Yousef Ali Sharifi and published by . This book was released on 2008 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation of Deposition Processes with PECVD Apparatus written by Juergen Geiser and published by . This book was released on 2012 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the study of simulating the growth of a thin film by chemical vapor deposition (CVD) processes. In recent years, due to the research in producing high-temperature films by depositing low pressures, the processes have increased and understanding the control mechanism of such processes has become very important. An underlying hierarchy of models for low-temperature and low-pressure plasma is presented in order to discuss the processes that can be used to implant or deposit thin layers of important materials. Due to the multi-scale problem of the flow and reaction processes, the authors propose multi-scale problems which are divided into near-field and far-field models.
