Download or read book Modeling the Bipolar Transistor written by Ian E. Getreu and published by Elsevier Science & Technology. This book was released on 1978 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Compact Hierarchical Bipolar Transistor Modeling with Hicum written by Michael Schrter and published by World Scientific. This book was released on 2010 with total page 753 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Download or read book Modeling the Bipolar Transistor written by Ian E. Getreu and published by . This book was released on 1979 with total page 261 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Bipolar transistor and MOSFET device models written by Kunihiro Suzuki and published by Bentham Science Publishers. This book was released on 2016-03-02 with total page 587 pages. Available in PDF, EPUB and Kindle. Book excerpt: Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the information technology sector. Bipolar transistors and MOSFETS are two special electronic device components that are used to construct very large scale integrated (VLSI) circuits, allowing engineers to create powerful machines that are power efficient. VLSI device characterization depends largely on semiconductor device modeling which is based on physical and electronic principles. Bipolar transistor and MOSFET device models is a textbook that describes basic functions and characterization models of these two types of transistors. Readers will learn about the processes employed to derive these models which will help them understand the modeling process. Chapters in this text cover the fundamentals of semiconductor devices, the pn junction, high and low injection region models for bipolar transistors, and different MOSFET models such as channel doping models and gated SOI models. Key features of this book include: - step by step, easy to understand presentation of model information on innovative semiconductor devices - an overview of model derivation, assumptions, approximations and limitations - novel experimental information on semiconductor parameters such as gate fringe capacitance, silicided source/drain resistance, and threshold voltage shift Bipolar transistor and MOSFET device models is an essential learning resource for advanced students and professional engineers involved in semiconductor device modeling and fabrication divisions.
Download or read book Modeling the Bipolar Transistor written by Jie Zheng and published by . This book was released on 1991 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Frequency Bipolar Transistors written by Michael Reisch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Download or read book Silicon Germanium Heterojunction Bipolar Transistors for mm Wave Systems Technology Modeling and Circuit Applications written by Niccolò Rinaldi and published by River Publishers. This book was released on 2018-03-15 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Download or read book Large signal Modeling of Bipolar Transistors for Computer aided Circuit Analysis written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1971 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: Improved large-signal models for the bipolar transistor are derived which are suitable for dc and transient computer-aided circuit analysis. The models are developed from the results of a two-dimensional analysis which yields the normal-active dc characteristics of the intrinsic portion of the transistor. Each of the models is formulated in terms of a measurable set of parameters which can theoretically be related to the low-level electrical parameters of the transistor and hence to its basic geometrical and physical characteristics. Based upon the dc model, two transient models are derived which correspond to one- and two-section approximations to the distributed nature of the intrinsic base as seen from the emitter-base terminals. The primary attribute of the single-section model, which corresponds in its complexity to commonly employed models, is its simplicity.
Download or read book Introduction to Semiconductor Devices written by Kevin F. Brennan and published by Cambridge University Press. This book was released on 2005-02-03 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: From semiconductor fundamentals to semiconductor devices used in the telecommunications and computing industries, this 2005 book provides a solid grounding in the most important devices used in the hottest areas of electronic engineering. The book includes coverage of future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductors. Next, the field effect devices are described, including MODFETs and MOSFETs. Short channel effects and the challenges faced by continuing miniaturisation are then addressed. The rest of the book discusses the structure, behaviour, and operating requirements of semiconductor devices used in lightwave and wireless telecommunications systems. This is both an excellent senior/graduate text, and a valuable reference for engineers and researchers in the field.
Download or read book Modeling of Bipolar Transistor Turnoff written by Kyuwoon Hwang and published by . This book was released on 1986 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Model and Design of Bipolar and MOS Current Mode Logic written by Massimo Alioto and published by Springer Science & Business Media. This book was released on 2006-01-25 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: Current-Mode digital circuits have been extensively analyzed and used since the early days of digital ICs. In particular, bipolar Current-Mode digital circuits emerged as an approach to realize digital circuits with the highest speed. Together with its speed performance, CMOS Current-Mode logic has been rediscovered to allow logic gates implementations which, in contrast to classical VLSI CMOS digital circuits, have the feature of low noise level generation. Thus, CMOS Current-Mode gates can be efficiently used inside analog and mixed-signal ICs, which require a low noise silicon environment. For these reasons, until today, many works and results have been published which reinforce the importance of Current-Mode digital circuits. In the topic of Current-Mode digital circuits, the authors spent a lot of effort in the last six years, and their original results highly enhanced both the modeling and the related design methodologies. Since the fundamental Current-Mode logic building block is the classical differential amplifier, the winning idea, that represents the starting point of the authors’ research, was to change the classical point of view typically followed in the investigation and design of Current-Mode digital circuits. In particular, they properly exploited classical paradigms developed and used in the analog circuit domain (a topic in which one of the authors maturated a great experience).
Download or read book Insulated Gate Bipolar Transistor IGBT Theory and Design written by Vinod Kumar Khanna and published by John Wiley & Sons. This book was released on 2004-04-05 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Download or read book Introduction to Modeling HBTs written by Matthias Rudolph and published by Artech House Publishers. This book was released on 2006 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Annotation Heterojunction bipolar transistors (HBTs) are high-performance transistor structures, and accurate HBT modeling is indispensable in helping engineers and designers achieve single-pass circuit design success. This first-of-its-kind guide provides complete hands-on understanding of available HBT models and the parameter strategies needed to use them effectively in circuit simulation. The book presents detailed coverage of state-of-the-art tools that help designers select the best model to meet specific design requirements, know what physical effects to expect, and modify or create new models to optimize simulation accuracy. Emphasizing "how to" procedures without getting bogged down in device physics, this indispensable guide puts the full power of active device modeling and circuit simulation at the designer's command
Download or read book Compact Transistor Modelling for Circuit Design written by Henk C. de Graaff and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation.
Download or read book Modeling and Simulation of Bipolar Transistor at Low Temperature written by Swarupa Madhav Nerurkar and published by . This book was released on 1993 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling and Characterization of Advanced Bipolar Transistors and Interconnects for Circuit Simulation written by Jiann-Shiun Yuan and published by . This book was released on 1988 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation discusses the modeling of two-dimensional effects in advanced bipolar transistors (BJT's) and interconnects. The goal is to develop accurate and compact models for SPICE circuit simulation of advanced bipolar technologies. After reviewing base pushout mechanism in the bipolar transistor, the collector current spreading effects in quasi-saturation have been presented. A two-dimensional circuit model including collector spreading effects in the epitaxial collector is developed based on the physical insights gained from PISCES device simulations. Illustrative measurements and simulations demonstrate the bipolar circuit modeling accuracy. Then a physics-based current-dependent base resistance model for circuit simulation is developed. Physical mechanisms such as base width modulation, base conductivity modulation, emitter crowding, and base pushout are accounted for in the comprehensive current -dependent base resistance "model. Comparisons of the model predictions with measurements and device simulations show excellent agreement. Two-dimensional circuit modeling is developed for the nonuniform current and charge distribution effects at the emitter-base sidewall and under the emitter during switch-on transients. The charge and current partitioning implemented in the bipolar transistor model treats the transient emitter crowding and current -dependent base resistance in a unified manner. Good agreement is obtained between model predictions and experimental results and transient device simulations. In parallel to the work on fast BJT digital transients, the bipolar transistor high-frequency small-signal s-parameter prediction using a physical device simulator is developed. This is a novel result which includes the effects of the Intrinsic bipolar response as well as the parasitics of interconnects, discontinuities, and bonding pads. This modeling technique can be used for sophisticated three-port or four-port network characterization and for predicting the high-frequency small-signal parameters other types of transistors. The dissertation examines the improvement of IC interconnect models. Interconnect models including losses and dispersion are developed for advanced BJT IC doping profiles. In addition, signal crosstalk between adjacent interconnects is discussed. An ECL ring oscillator with interconnection line in mixed-mode circuit simulation demonstrates the utility and necessity of accurate interconnect modeling. In summary, the dissertation provides a comprehensive two-dimensional circuit and interconnect modeling for advanced bipolar IC techniques useful in computer-aided device and circuit design.
