Download or read book Modeling of Transient Enhanced Diffusion and Simulation of Boron Activation and Deactivation in Silicon written by Heidi Meyer and published by . This book was released on 2002 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling and Control of Transient Enhanced Diffusion of Boron in Silicon written by Rudiyanto Gunawan and published by . This book was released on 2003 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Modeling of Ion Implantation Induced Transient Deactivation and Diffusion Processes in Boron Doped Silicon written by Srinivasan Chakravarthi and published by . This book was released on 2001 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic Scale Modeling of Boron Transient Diffusion in Silicon written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We presents results from a predictive atomic level simulation of Boron diffusion in Silicon under a wide variety of implant and annealing conditions. The parameters for this simulation have been extracted from first principle approximation models and molecular dynamics simulations. The results are compared with experiments showing good agreement in all cases. The parameters and reactions used have been implemented into a continuum-level model simulator.
Download or read book Modeling the Enhanced Diffusion of Implanted Boron in Silicon written by Yudong Kim and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and modeling of boron diffusion activation and evolution of extended defects and point defects during rapid thermal annealing of ion implanted silicon written by Hiroyuki Kinoshita and published by . This book was released on 1993 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dopant Behavior in Complex Semiconductor Systems written by Ning Kong and published by . This book was released on 2009 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the size of modern transistors is continuously scaled down, challenges rise in almost every component of a silicon device. Formation of ultra shallow junction (USJ) with high activation level is particularly important for suppressing short channel effects. However, the formation of low resistance USJ is made difficult by dopant Transient Enhanced Diffusion (TED) and clustering-induced deactivation. In this work, we proposed a novel point defect engineering solution to address the arsenic TED challenge. By overlapping arsenic doped region with silicon interstitials and vacancies, we observed enhanced and retarded arsenic diffusion upon anneal, respectively. We explain this phenomenon by arsenic interstitial diffusion mechanism. In addition, we implemented this interstitial-based mechanism into a kinetic Monte Carlo (kMC) simulator. The key role of interstitials in arsenic TED is confirmed. And we demonstrated that the simulator has an improved prediction capability for arsenic TED and deactivation. As a long time unsolved process challenge, arsenic segregation at SiO2/Si interface was investigated using density functional theory (DFT) calculation. The segregation-induced arsenic dose loss not only increases resistance but also may induce interface states. We identified three arsenic complex configurations, [chemical formula], [chemical formula] and [chemical formula], which are highly stabilized at SiO2/Si interface due to the unique local bonding environments. Therefore, they could contribute to arsenic segregation as both initial stage precursors and dopant trapping sites. Our calculation indicates that arsenic atoms trapped in such interface complexes are electrically inactive. Finally, the formation and evolution dynamics of these interface arsenic-defect complexes are discussed and kMC models are constructed to describe the segregation effects. A potential problem for the p-type USJ formation is the recently found transient fast boron diffusion during solid phase epitaxial regrowth process. Using DFT calculations and molecular dynamics simulation, we identified an interstitial-based mechanism of fast boron diffusion in amorphous silicon. The activation energy for this diffusion mechanism is in good agreement with experimental results. In addition, this mechanism is consistent with the experimentally reported transient and concentration-dependent features of boron diffusion in amorphous silicon.
Download or read book Simulation and Experimental Study of Boron Clustering in Crystalline Silicon written by Weiwei Luo and published by . This book was released on 2000 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Modeling of Ion Implantation Induced Transient Enhanced Diffusion in Silicon written by Henry Shaw Chao and published by . This book was released on 1997 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Si Front End Processing Physics and Technology II of Dopant Defect Interactions II Volume 610 written by Aditya Agarwal and published by . This book was released on 2001-04-09 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.
Download or read book Diffusion in Silicon A Seven Year Retrospective written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2005-07-15 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt: This collection of abstracts of experimental and theoretical papers on the subject of diffusion in silicon is intended to complement earlier volumes (DDF153-155) which covered the previous decades work on the same topic. The abstracts are grouped according to the diffusing species in question. The latter comprise Ag, Al, As, Au, B, Ba, Be, C, Ca, Cl, Co, Cr, Cu, Er, F, Fe, Ge, H, He, Hf, In, Ir, K, Mg, Mn, Mo, N, Na, Nb, Ni, O, P, Pb, Pt, Rb, Sb, Se, Si, SiH3, Sn, Ti, V, Yb and Zn with regard to bulk diffusion, Ag, Au, Ba, Cl, Cu, Er, F, Ga, Ge, In, O, Pb, Sb, Si, SiH3, Sn and Y with regard to surface diffusion, H with regard to grain-boundary diffusion, and self-diffusion in liquid Si.
Download or read book Physically based modeling of boron diffusion and activation incorporating the 311 extended defect and photo excitation effects written by Philip Sung-joon Choi and published by . This book was released on 1997 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Boron Activation and Diffusion in Polycrystalline Silicon with Flash assist Rapid Thermal Annealing written by Sidan Jin and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: The rigorous scaling in dimensions for future generations of transistor fabrication demands ever steeper requirements for dopant solubility with minimal diffusion. Advanced annealing techniques such as flash-assist rapid thermal processing now allow effective anneal times up to three orders of magnitude less than conventional methods. At the same time, advanced characterization techniques can now provide three-dimensional compositional analysis of materials systems. While there has been extensive research for flash annealing of B doped crystalline Si, the effects on polycrystalline Si have been less studied, but is of equal importance. It continues to be prevalent in device fabrication for current and future technologies. The morphology and evolution of grains in heavily B-doped poly-Si is studied under high temperature millisecond annealing conditions using plan-view transmission electron microscopy. High activation with low thermal budgets has allowed study of a very fine-grained microstructure of highly activated B doped poly-Si. 3D atom probe tomography allowed direct quantitative measurement of the segregation coefficient of B to the grain boundaries, and its diffusion behavior has been accurately modeled. Activation, mobility, and deactivation of B in flash annealed polycrystalline Si was also explored using Hall effect. By combining electrical, compositional and microstructural measurements, a model has been developed to describe the activation, mobility, and diffusion behavior of B in poly-Si films with average hole concentrations greater than 5\U+00d7\1019 cm−3.
Download or read book Effect of Ramp Rate and Annealing Temperature on Boron Transient Diffusion in Implanted Silicon written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We present results of recent kinetic Monte Carlo simulations of the effect of annealing time and ramp rate on boron transient enhanced diffusion (BTED) in low energy ion implanted silicon. The simulations use a database of defect and dopant energetics derived from first principle calculations. We discuss the complete atomistic details of defect and dopant clustering during the anneals, and the dependence of boron TED on ramp rate. The simulations provide a complete time history of the evolution of the active boron fraction during the anneal for a wide variety of conditions. We also studied the lateral spreading of the boron during the annealing for two different conditions, furnace anneal and ramp anneal.
Download or read book IBM Journal of Research and Development written by and published by . This book was released on 2002 with total page 854 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation of Semiconductor Processes and Devices 2004 written by Gerhard Wachutka and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 387 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Download or read book Rapid Thermal and Other Short time Processing Technologies written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 2000 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings from this May 2000 symposium illustrate the range of applications in Rapid Thermal Processing (RTP). The refereed papers cover a variety of issues, such as ultra-shallow junctions; contacts for nanoscale CMOS; gate stacks; new applications of RTP, such as for the enhanced crystalization of amorphous silicon thin films; and advances on RTP systems and process monitoring, including optimizing and controlling gas flows in an RTCVD reactor. Most presentations are supported by charts and other graphical data. c. Book News Inc.
