Download or read book Microwave Field Effect Transistor Development written by Herbert Goronkin and published by . This book was released on 1974 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of the program was to fabricate a 10-watt F-Band field effect transistor. Two approaches were taken. The multiple mask approach was found to be cumbersome and generally difficult to execute for a 2.5 micron geometry device. Rather than pursue this approach, a second design was initiated which involved self-registration of the source and drain with respect to the gate by means of a selective epitaxial region which comprises the electrical channel. Due to several unanticipated process difficulties (for which solutions have been identified) time did not allow for completion of the fabrication portion of the FET-11 effort. Preliminary findings indicate that the approach is feasible and should be expected to yield microwave power field effect transistors. (Author).

Download or read book Microwave Field effect Transistors written by Raymond Sydney Pengelly and published by Wiley-Blackwell. This book was released on 1986 with total page 668 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microwave Field effect Transistors written by Raymond S. Pengelly and published by John Wiley & Sons. This book was released on 1982 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microwave Field Effect Transistor Development written by Michael C. Driver and published by . This book was released on 1973 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt: HE DEVELOPMENT OF A GALLIUM ARSENIDE Schottky barrier gate field effect transistor to deliver power at microwave frequencies. The program achieved 1.2 watts of saturated power at 3.0 GHz with six small (500 micrometers wide) devices wired in parallel on a single chip carrier. The small signal gain of individual devices at this frequency was as high as 10 dB with cut off frequencies of 10 GHz. A 5 dB gain at 3 GHz with 800 milliwatts of output power was achieved with 6 devices in parallel. Measurements were made of intermodulation products showing -23 dB third order IMP at small signal levels which is a typical result for devices that have not been optimized for low harmonic distortion. A mercury probe was developed for the rapid evaluation of expitaxial material for FET fabrication. (Modified author abstract).

Download or read book High Power Microwave Field Effect Transistor Development written by M. C. Driver and published by . This book was released on 1975 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt: Work is concentrating on gallium arsenide devices rather than silicon to take advantage of the higher mobility. Two fabrication techniques are being used to construct arrays of unit cells on GaAs wafers. The first technique requires realignment of multiple photomasks and has given the best performance but is more costly. The second technique uses only one photomask and the gate is self-aligned between the source and drain metalization. Both unit cells are designed for approximately one watt. The realigned cell has an active length of 1500 microns, and measures about 8 mils by 12 mils. This cell was tested at 3.5 GHz with .6 watts output, 18 db of gain, and 15% efficiency. The efficiency would be much improved in a better test fixture. The self-aligned gate cell has an active length of 2500 microns and measures 12.5 mils by 17 mils. This cell was tested at 4 GHz with one watt of power output, 6 db of gain and 39% drain efficiency or 34.7% overall efficiency.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modern Microwave Transistors written by Frank Schwierz and published by Wiley-Interscience. This book was released on 2003 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive and up-to-date coverage of currently used transistors for commercial and military applications. Authors are recognized experts with previous publications. Updated descriptions of state-of-the-art devices available on Wiley Web site.

Download or read book Fabrication Technology for Microwave GaAs Field Effect Transistors written by Richard David Gurney and published by . This book was released on 1976 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon MOS Field Effect Transistor RF Microwave Nonlinear Model Study and Power Amplifier Development for Wireless Communications written by Deukhyoun Heo and published by . This book was released on 2000 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling and Characterization of RF and Microwave Power FETs written by Peter Aaen and published by Cambridge University Press. This book was released on 2007-06-25 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

Download or read book Microcircuit Reliability Bibliography written by and published by . This book was released on 1978 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Integrated Circuit Industry written by Yangyuan Wang and published by Springer Nature. This book was released on 2023-12-29 with total page 2006 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by hundreds experts who have made contributions to both enterprise and academics research, these excellent reference books provide all necessary knowledge of the whole industrial chain of integrated circuits, and cover topics related to the technology evolution trends, fabrication, applications, new materials, equipment, economy, investment, and industrial developments of integrated circuits. Especially, the coverage is broad in scope and deep enough for all kind of readers being interested in integrated circuit industry. Remarkable data collection, update marketing evaluation, enough working knowledge of integrated circuit fabrication, clear and accessible category of integrated circuit products, and good equipment insight explanation, etc. can make general readers build up a clear overview about the whole integrated circuit industry. This encyclopedia is designed as a reference book for scientists and engineers actively involved in integrated circuit research and development field. In addition, this book provides enough guide lines and knowledges to benefit enterprisers being interested in integrated circuit industry.

Download or read book The Fabrication and Evaluation of Microwave Field Effect Transistors written by Zachary J. Lemnios and published by . This book was released on 1979 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Development of Silicon Carbide Metal semiconductor Field effect Transistors for Microwave Power Applications written by Ho-Young Cha and published by . This book was released on 2004 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Parameter Extraction and Complex Nonlinear Transistor Models written by Gunter Kompa and published by Artech House. This book was released on 2019-12-31 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.

Download or read book Microwave and Wireless Communications Technology written by Joseph Carr and published by Newnes. This book was released on 1997-01-02 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text offers a practical, device-based approach to the study of microwave and wireless communications. Student objectives, questions and problems, and end-of-chapter summaries are used to reinforce the points made