EBookClubs

Read Books & Download eBooks Full Online

EBookClubs

Read Books & Download eBooks Full Online

Book Room Temperature Evolution of Microstructure and Resistivity in Electroplated Copper Films

Download or read book Room Temperature Evolution of Microstructure and Resistivity in Electroplated Copper Films written by International Business Machines Corporation. Research Division and published by . This book was released on 1998 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: "We demonstrate that at room temperature (21 C̊), electroplated Cu films undergo microstructural changes which are manifested by a large decrease in resistivity. The electroplated, 1 [mu]m thick films were monitored in situ using resistance and stress analysis and ex situ using focused ion beam (FIB), theta-theta x-ray diffraction (XRD) and pole figure analysis. The films, while held at 21 C̊, undergo a 20 to 25% decrease in resistivity and a decrease in compressive stress to near zero values. The resistance and stress changes are driven by complete recrystallization of the film where grains grow in size by over an order of magnitude. The recrystallization leads to a microstructure which has a stronger Cu(111) fiber texture. The effective activation energy for the process was calculated using the Kissinger analysis method applied to plots of in situ resistance as a function of temperature with varied heating ramp rates. The processes involved in the evolution of the new microstructure in the electroplated Cu films have an effective activation energy of 0.92 [+ or -] 0.04 eV, which is consistent with grain boundary diffusion as the dominant mechanism."

Book Advanced Interconnects for ULSI Technology

Download or read book Advanced Interconnects for ULSI Technology written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2012-02-17 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

Book Electromigration in ULSI Interconnections

Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electro migration in integrated circuits. It is intended for both beginner and advanced readers on electro migration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electro migration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electro migration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electro migration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electro migration are presented in a concise and rigorous manner.Methods of numerical modeling for the interconnect electro migration and their applications to the understanding of electro migration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electro migration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electro migration are outlined and discussed.

Book Copper Interconnect Technology

Download or read book Copper Interconnect Technology written by Tapan Gupta and published by Springer Science & Business Media. This book was released on 2010-01-22 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.

Book CMOS Past  Present and Future

Download or read book CMOS Past Present and Future written by Henry Radamson and published by Woodhead Publishing. This book was released on 2018-04-03 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends. The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements. - Addresses challenges and opportunities for the use of CMOS - Covers the latest methods of strain engineering, materials integration to increase mobility, nano-scaled transistor processing, and integration of CMOS with photonic components - Provides a look at the evolution of CMOS technology, including the origins of the technology, current status and future possibilities

Book Texture Development in Copper Damascene Lines and Thin Films

Download or read book Texture Development in Copper Damascene Lines and Thin Films written by Chia-Jeng Chung and published by . This book was released on 2007 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Copper Electrodeposition for Nanofabrication of Electronics Devices

Download or read book Copper Electrodeposition for Nanofabrication of Electronics Devices written by Kazuo Kondo and published by Springer Science & Business Media. This book was released on 2013-11-20 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the scientific mechanism of copper electrodeposition and it's wide range of applications. The book will cover everything from the basic fundamentals to practical applications. In addition, the book will also cover important topics such as: • ULSI wiring material based upon copper nanowiring • Printed circuit boards • Stacked semiconductors • Through Silicon Via • Smooth copper foil for Lithium-Ion battery electrodes. This book is ideal for nanotechnologists, industry professionals, and practitioners.

Book Micro  and Opto Electronic Materials and Structures  Physics  Mechanics  Design  Reliability  Packaging

Download or read book Micro and Opto Electronic Materials and Structures Physics Mechanics Design Reliability Packaging written by Ephraim Suhir and published by Springer Science & Business Media. This book was released on 2007-05-26 with total page 1471 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook provides the most comprehensive, up-to-date and easy-to-apply information on the physics, mechanics, reliability and packaging of micro- and opto-electronic materials. It details their assemblies, structures and systems, and each chapter contains a summary of the state-of-the-art in a particular field. The book provides practical recommendations on how to apply current knowledge and technology to design and manufacture. It further describes how to operate a viable, reliable and cost-effective electronic component or photonic device, and how to make such a device into a successful commercial product.

Book Chemical Abstracts

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Microstructure Study of Electroplated Copper Films for ULSI Metal Interconnections

Download or read book Microstructure Study of Electroplated Copper Films for ULSI Metal Interconnections written by Haebum Lee and published by . This book was released on 2001 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Texture and Microstructure in Copper Damascene Interconnects

Download or read book Texture and Microstructure in Copper Damascene Interconnects written by Jae-Young Cho and published by . This book was released on 2004 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: "A new interpretation of textural and microstructural evolution in Cu damascene interconnects lines after annealing and possible factors responsible for the texture transformation are suggested, and the optimum processing conditions are recommended." --

Book Texture and Anisotropy of Polycrystals II

Download or read book Texture and Anisotropy of Polycrystals II written by C. Esling and published by . This book was released on 2005 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: Natural, as well as man-made, materials are often assumed to behave uniformly, exhibiting equal strength in all directions, because most of them have a polycrystalline structure. The anisotropy of the individual crystals, however, is smoothed out only in the presence of a large number of grains having a random distribution of orientations. In reality, there usually remains an anisotropy due to the existence of preferred orientations. Its magnitude depends upon the statistical distribution of grain orientations - the crystallographic texture or, more simply, the texture. -This governs the extremes, of the physical property of interest, which a single crystal of the material under consideration can exhibit in directional tests. Local variations in texture, as well as the arrangements and types of grain/phase boundaries, may give rise to inhomogeneous material properties. The texture also carries with it information on the history of a material's processing, use and misuse. A knowledge of the texture is a prerequisite for all quantitative techniques of materials characterization, and is based upon the interpretation of diffraction-peak intensities. It is also necessary to model the relationships between microstructural features and physical or mechanical properties. Therefore, the texture is of great value for quality control in a wide range of industrial applications, and in basic materials research.

Book Textures of Materials   ICOTOM 13

Download or read book Textures of Materials ICOTOM 13 written by Dong Nyung Lee and published by . This book was released on 2002 with total page 1040 pages. Available in PDF, EPUB and Kindle. Book excerpt: Texture is a fundamental material characteristic which results from the microstructural evolution that takes place during various processes, including the thermomechanical deformation of materials. Therefore, texture-related phenomena will continue to be of great importance, because of their scientific interest as well as their effect upon industrial applications, in the 21st century. This volume deals with all of the themes which are related to texture phenomena in both conventional and advanced materials, including: ceramics, thin films, polymers, nanocrystalline materials, rocks and composites. The papers cover various texture-related fields: quantitative texture analysis, experimental measurement, modeling, micro-texture analysis, deformation textures, recrystallization and grain growth textures, anisotropic properties, textures in steels, textures in Al and Al-Alloys, textures in thin films, and textures in ceramics, intermetallics and polymers, etc.

Book Electromigration in Thin Films and Electronic Devices

Download or read book Electromigration in Thin Films and Electronic Devices written by Choong-Un Kim and published by Elsevier. This book was released on 2011-08-28 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: Understanding and limiting electromigration in thin films is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area.Part one consists of three introductory chapters, covering modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation and x-ray microbeam studies of electromigration. Part two deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure. Finally, part three covers electromigration in solder, with chapters discussing topics such as electromigration-induced microstructural evolution and electromigration in flip-chip solder joints.With its distinguished editor and international team of contributors, Electromigration in thin films and electronic devices is an essential reference for materials scientists and engineers in the microelectronics, packaging and interconnects industries, as well as all those with an academic research interest in the field. - Provides up-to-date coverage of the continued development of advanced copper interconnects for integrated circuits - Comprehensively reviews modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation, and x-ray microbeam studies of electromigration - Deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure