Download or read book Microstructural and Chemical Study of SiO subscript 2 SiC Interfaces and Correlations with Electrical Properties of SiC MOS Diodes and SiC Mosfets written by Kai-Chieh Chang and published by . This book was released on 2003 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Properties of Thermally Grown SiO2 SiC Interfaces written by Nitya Nand Singh and published by . This book was released on 1992 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Download or read book Study of Electrical Properties of 4H SiC SiO2 Interface written by Harsh Naik and published by . This book was released on 2013 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2006 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices OCo power switching Schottky diodes and high temperature MESFETs OCo are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. Contents: SiC Material Properties (G Pensl et al.); SiC Homoepitaxy and Heteroepitaxy (A S Bakin); Ohmic Contacts to SiC (F Roccaforte et al.); Silicon Carbide Schottky Barrier Diode (J H Zhao et al.); High Power SiC PiN Rectifiers (R Singh); Silicon Carbide Diodes for Microwave Applications (K Vassilevski); SiC Thyristors (M E Levinshtein et al.); Silicon Carbide Static Induction Transistors (G C DeSalvo). Readership: Technologists, scientists, engineers and graduate students working on silicon carbide or other wide band gap materials and devices."
Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface written by B.E. Deal and published by Springer. This book was released on 1989-02-28 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Download or read book SiC Materials and Devices written by and published by Academic Press. This book was released on 1998-07-02 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
Download or read book Electronic Properties and Reliability of the SiO2 SiC Interface written by John Rozen and published by . This book was released on 2008 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Characterization of Silicon Carbide Semiconductor and SiC SiO2 Interfaces written by Nitya Nand Singh and published by . This book was released on 1997 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of the Origin of Mobility Loss at the SiC SiO2 Interface written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) is a wide band gap semiconductor with material properties which make it ideally suited for high temperature, high frequency, and high power metal oxide semiconductor field effect transistor (MOSFET) applications. The wide scale commercial development of these devices has been hindered due to disappointing electron mobility when compared to properties of the bulk material. This mobility loss has been associated with the interface between SiC and the native oxide formed (SiO2). Many improvements in mobility have been realized, but it is currently still significantly less than that of the bulk material. The work in this dissertation is aimed at understanding the origin of this mobility loss from an atomic perspective. Analytical electron microscopy techniques including scanning transmission electron microscopy (STEM), Z-contrast imaging, electron energy loss spectroscopy (EELS), convergent beam electron diffraction (CBED) are used in this study to characterize the 4H-SiC/SiO2 interface. The effect of aluminum implantation, nitric oxide annealing, oxidation rate, and activation annealing temperature on the interface was examined. We found a carbon rich transition layer present on the SiC side of the interface which varies in thickness depending on processing conditions. The thickness of this transition region is linearly related to the electron mobility. We were also able to determine that this transition region occurs as a result of the oxidation process. During oxidation, carbon interstitials are emitted on both sides of the interface, causing a carbon pileup on the SiC side of the interface, which we detect as a transition region. The rate of oxidation is also very important as oxidizing at a fast rate leads greater carbon pileup. The extra carbon in this transition region acts as electron scattering centers, which ultimately lead to a reduced electron mobility. This study is able to directly correlate the microstructure on an atomic scale with.
Download or read book Structure and Chemistry of Defect Passivation at the Interface Between Silicon Dioxide and Silicon Carbide written by Yi Xu and published by . This book was released on 2014 with total page 139 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) is a wide bandgap semiconductor which has material properties well-suited for high-power, high-temperature electronics applications. The performance of SiC transistors is limited by electrical defects formed at the SiO2/SiC interface under high temperature oxidation. A central goal of this work is to improve our atomic level understanding of electrical defects in SiC devices, and to further develop methods to minimize defects. Introduction of interfacial nitrogen (N) or phosphorus (P) reduces the interface (charge) trap density, increases the SiC charge mobility (in the semiconductor channel), and thus device performance. This dissertation is focused on the chemistry of the SiO2/SiC interface, the critical interface in future SiC-based devices. We address issues of composition, structure, chemical bonding, and reaction behavior of N and P that we have used to improve device performance. We report photoemission and ion scattering studies to determine the concentrations of N and P passivating agents at the SiO2/SiC interface, and develop a more complete understanding of the mechanism and kinetics for the passivation processes on different crystallographic surfaces. The study shows that N (and P) passivated SiO2/SiC structures have a thin oxy-nitride (oxy-phosphide) interface dielectric layer that cannot be removed by a buffered HF etchant. The same dielectric structures are completely etched when formed on Si. Atomic scale modeling, combined with our experimental observations, results in the suggestion of likely bonding structures of N and P at the SiO2/SiC interface. The depth profile of N and P at SiO2/SiC interface has also been established and provides further insights into the nature of N and P as surface passivating additives.
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book Characterization and Development of the 4H SiC SiO2 Interface for Power MOSFET Applications written by Alberto Salinaro and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic Structure of the Vicinal Interface Between Silicon Carbide and Silicon Dioxide written by Peizhi Liu (Researcher in materials science and engineering) and published by . This book was released on 2014 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: The interface between silicon carbide (SiC) and silicon dioxide (SiO2) is generally considered to be the cause for the reduced electron mobility of SiC power devices. Previous studies showed an inverse relationship between the mobility and the transition layer width at SiC/SiO2 interface. In this research the transition region at the interface was investigated with atomic resolution transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). From a tilting series of high resolution TEM imaging and a through focal series of Z-contrast imaging, the 3D atomic structure of the SiC/SiO2 vicinal interface was constructed. The vicinal interface was revealed to consist of atomic steps and facets deviating from the ideal off-axis cut plane, which caused the atomic scale roughness of the interface. This is in strict contrast to previous studies that concluded on a chemical composition change. During the Z-contrast imaging, simultaneous EELS spectra were collected at the interface. A new model based method was developed to quantify these EELS spectra more precisely. Composition profiles of Si, C and O across the interface were extracted from the spectra. Composition profiles showed that the transition region was due to the vicinal interface and its atomic scale roughness but minimal stoichiometric change. Compositions calculated with a chemometrics approach conformed that the interface was stoichiometric. The transition layer width had an intrinsic value of ~2 nm viewed from the step edge-on direction. In addition, the interface of oxide layers grown on an on-axis cut substrate was examined with the same method mentioned above. The results showed the on-axis cut interface had the same composition fluctuation region as the off-axis cut interface viewing from the step edge-on direction. The roughness is directly correlated with processing conditions and the material system may have an intrinsic local roughness. This atomic scale roughness of the interface is limiting the electron mobility and reliability of SiC based devices.
Download or read book Investigation of Near Surface Chemical Physical and Mechanical Properties of Silicon Carbide Crystals and Fibers Modified by Ion Implantation written by J. A. Spitznagel and published by . This book was released on 1988 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modification of chemical, physical and mechanical properties of ceramic/semiconductor surfaces by ion implantation provides an opportunity to define and obtain desirable properties for a variety of applications. These include: interfaces in composite materials, electrical properties of devices and contacts, and specialized surfaces for optical waveguides, wear and corrosion resistance, etc. In this study, single crystals (6H), and whiskers of high purity silicon carbide were implanted with a variety of n- and p-type dopants (B, N, A1, P), an isovalent dopant (Ti), inert species (Ne) and hydrogen. Isochronal anneals at temperatures up to 1173 K permitted systematic evaluation of thermal effects in the implanted region. Implants fluences were normalized to permit comparisons on the basis of equal concentrations of displaced Si atoms for each ion. microstructural, mechanical and chemical effects were studied by a series of RBS/channeling, TEM, SEM, microhardness, microtensile, AES, SIMS, and wetting (sputtered and molten metal) measurements. Recovery of crystalline structure during annealing is shown to be relatively independent of the implant species but depends upon the number of atomic displacements in the Si sublattice. Near-surface mechanical and chemical effects, however, are very dependent on the chemical/electrical nature of the implanted ions. Applications to ceramic/metal interfaces in metal matrix composites are discussed.
Download or read book Solid State Properties written by Mildred Dresselhaus and published by Springer. This book was released on 2018-01-17 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book fills a gap between many of the basic solid state physics and materials sciencebooks that are currently available. It is written for a mixed audience of electricalengineering and applied physics students who have some knowledge of elementaryundergraduate quantum mechanics and statistical mechanics. This book, based on asuccessful course taught at MIT, is divided pedagogically into three parts: (I) ElectronicStructure, (II) Transport Properties, and (III) Optical Properties. Each topic is explainedin the context of bulk materials and then extended to low-dimensional materials whereapplicable. Problem sets review the content of each chapter to help students to understandthe material described in each of the chapters more deeply and to prepare them to masterthe next chapters.
Download or read book Wafer Bonding written by Marin Alexe and published by Springer Science & Business Media. This book was released on 2004-05-14 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the past decade direct wafer bonding has developed into a mature materials integration technology. This book presents state-of-the-art reviews of the most important applications of wafer bonding written by experts from industry and academia. The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.
