Download or read book Metallization and Solid Phase Epitaxy of Germanium silicon Alloys written by Qi-Zhong Hong and published by . This book was released on 1991 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Thermal Stability of Copper based Metallization and Solid Phase Epitaxy of Antimony Implanted Germanium silicon Alloys written by Stella Q. Hong and published by . This book was released on 1994 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon germanium Alloy Layers Formed by Solid Phase Epitaxial Growth of Germanium Ion Implanted Silicon written by Prayoon Songsiriritthigul and published by . This book was released on 1997 with total page 55 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Germanium and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic

Download or read book Epitaxial Growth of Nitrides on Germanium written by Ruben Lieten and published by ASP / VUBPRESS / UPA. This book was released on 2009-09 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.

Download or read book Metal Impurities in Silicon and Germanium Based Technologies written by Cor Claeys and published by Springer. This book was released on 2018-08-13 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

Download or read book The Growth and Characterization of Ge C Alloy Thin Films and Solid Phase Equilibria for Metal silicon oxygen Ternary Systems written by Haojie Yuan and published by . This book was released on 1992 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Germanium Carbon Alloys written by S. Pantellides and published by CRC Press. This book was released on 2002-07-26 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials

Download or read book American Doctoral Dissertations written by and published by . This book was released on 2002 with total page 776 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book SiGe and Si Strained Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Download or read book Metal organic Vapor Phase Epitaxy and Characterization of Phase change Alloys in the Ge Sb Te Material System written by Albert Ratajczak and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book CRC Handbook of Metal Etchants written by Perrin Walker and published by CRC Press. This book was released on 1990-12-11 with total page 1434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication presents cleaning and etching solutions, their applications, and results on inorganic materials. It is a comprehensive collection of etching and cleaning solutions in a single source. Chemical formulas are presented in one of three standard formats - general, electrolytic or ionized gas formats - to insure inclusion of all necessary operational data as shown in references that accompany each numbered formula. The book describes other applications of specific solutions, including their use on other metals or metallic compounds. Physical properties, association of natural and man-made minerals, and materials are shown in relationship to crystal structure, special processing techniques and solid state devices and assemblies fabricated. This publication also presents a number of organic materials which are widely used in handling and general processing...waxes, plastics, and lacquers for example. It is useful to individuals involved in study, development, and processing of metals and metallic compounds. It is invaluable for readers from the college level to industrial R & D and full-scale device fabrication, testing and sales. Scientific disciplines, work areas and individuals with great interest include: chemistry, physics, metallurgy, geology, solid state, ceramic and glass, research libraries, individuals dealing with chemical processing of inorganic materials, societies and schools.

Download or read book NBS Special Publication written by and published by . This book was released on 1968 with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Growth Rate Epitaxial Silicon and Silicon germanium Alloys on Silicon by Plasma Enhanced Chemical Vapor Deposition PECVD written by Tien H. Nguyen and published by . This book was released on 1999 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metal Induced Crystallization written by Zumin Wang and published by CRC Press. This book was released on 2015-01-28 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystalline semiconductors in the form of thin films are crucial materials for many modern, advanced technologies in fields such as microelectronics, optoelectronics, display technology, and photovoltaic technology. Crystalline semiconductors can be produced at surprisingly low temperatures (as low as 120C) by crystallization of amorphous semicon

Download or read book Low Temperature Epitaxial Growth of Rare Earth Doped Silicon and Silicon Germanium Alloys written by Walter Varhue and published by . This book was released on 1998 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: PL and EL from a forward biased PN junction have been observed from Er doped Si produced in this investigation. The material was deposited epitaxially in a low temperature process (500 deg C) involving PECYD using an ECR source. The dopant source was a metal organic compound, tris (bis trimethyl silyl amido) Er (III), which contained three nitrogen atoms bonded directly to Er. This bonding arrangement was beneficial in forming an intact, optically active center in the epitaxial Si material. The metal organic dopant precursor used however contained 18 C atom which to a large extent also became incorporated in the deposited film. Attempts to operate the fabricated PN junctions in reverse bias breakdown failed due to excessive leakage in the material caused by the high level of carbon impurities. Later work shifted to growing the epitaxial layer doped with only Er, with no co-dopants to improve the electrical transport properties of the material. This would also answer some basic physical questions about the role of co-dopants in the emission properties of the Er center. This was accomplished by adding an Er sputter gun to the reactor, and operating it during the PECVD growth of Si. We are still in the process of getting some of the bugs out of this process but we see no physical reason why it should not yield significant reverse bias EL.