Download or read book Metal semiconductor field effect transistor MESFET written by Salima Rahman and published by . This book was released on 2011 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Testing of a GaAs Metal semiconductor Field Effect Transistor MESFET written by Ganiyu Ademola Hanidu and published by . This book was released on 1980 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Quantum Aspects of a Special GaAs MESFET metal Semiconductor Field Effect Transistor written by Gunnar Roos and published by . This book was released on 1987 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation of Optically Controlled Silicon Metal Semiconductor Field Effect Transistor Si MESFET written by Naoyuki Motoyama and published by . This book was released on 2006 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Device Physics and Simulation written by J.S. Yuan and published by Springer Science & Business Media. This book was released on 1998-05-31 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.
Download or read book The Gallium Arsenide Metal Semiconductor Field Effect Transistor MESFET written by G. Rogers and published by . This book was released on 1981 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation of SiC MESFET Using Synopsys Technology Computer aided Design written by Siddharth Nirmal and published by . This book was released on 2011 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microwave Field effect Transistors written by Raymond S. Pengelly and published by John Wiley & Sons. This book was released on 1982 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microwave Field effect Transistors written by Raymond Sydney Pengelly and published by Wiley-Blackwell. This book was released on 1986 with total page 668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Device Physics Modeling Technology and Analysis for Silicon MESFET written by Iraj Sadegh Amiri and published by Springer. This book was released on 2018-12-13 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.
Download or read book GaAs MESFET Circuit Design written by Robert Soares and published by Artech House Publishers. This book was released on 1988 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Fully Implanted N p Junction Diode and Metal Semiconductor Field Effect Transistor MESFET in 4H SiC written by Jesse B. Tucker and published by . This book was released on 2001 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Oxide written by Masataka Higashiwaki and published by Springer Nature. This book was released on 2020-04-23 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.
Download or read book Gallium Nitride Mesfet Metal Semiconductor Field Effect Transistor Terminal Charge and Capacitance Simulation Using New Charge Conserving Capacitance Model written by Nima Sahabi and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The graduate project is based on the results of the IV characteristics, gate charge, source and drain charges, and the terminal gate-source, and terminal gate-drain capacitance. The pinch-off voltage has been extracted and the value agrees well with the active channel thickness. I-V characteristics shows the linear and non-linear properties for potential switching and high frequency performance. In order to confirm the switching performance, the intrinsic parameters such as gate charge, source and drain charge and gate capacitances has been evaluated to understand the frequency behavior of the GaN MESFET. A typical MESFET structure was considered with a gate width of W=10x10-4 cm, Gate length of L=0.1x10-4 cm, doping concentration of Nd= 7.0*1017 cm-3 and active layer thickness of d=0.2x10-4 cm.
Download or read book GaAs FET Principles and Technology written by James V. DiLorenzo and published by Artech House Publishers. This book was released on 1982 with total page 808 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Junctionless Field Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-01-25 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Download or read book Fundamentals of III V Devices written by Liu and published by Wiley-Interscience. This book was released on 1999-10-14 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt: A systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III-V Devices offers a variety of features, including: * An introductory chapter on the basic properties, growth process, and device physics of III-V materials * Coverage of both dc and high-frequency models, integrating aspects of device physics and circuit design * A discussion of transistor fabrication and device comparison * 55 worked-out examples illustrating design considerations for a given application * 215 figures and end-of-chapter practice problems * Appendices listing parameters for various materials and transistor types
