Download or read book Mechanism for the Selective Etch of Silicon Dioxide in a High density Low pressure Inductively Coupled Fluorocarbon Plasma written by Mark Justin Sowa and published by . This book was released on 1999 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Oxide and Silicon Nitride Etch Mechanisms in Nitrogen Trifloride ethylene Plasma written by Puthajat Machima and published by . This book was released on 2005 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Study of SiO2 to Si Etching Selectivity in High Density Low Pressure Fluorocarbon Plasmas written by Karen Hildegard Ralston Kirmse and published by . This book was released on 1996 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Reaction Mechanisms for Modeling the Fluorocarbon Plasma Etch of Silicon Oxide and Related Materials written by and published by . This book was released on 2001 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: As part of a project with SEMATECH, detailed chemical reaction mechanisms have been developed that describe the gas-phase and surface chemistry occurring during the fluorocarbon plasma etching of silicon dioxide and related materials. The fluorocarbons examined are C2F6, CHF3 and C4F, while the materials studied are silicon dioxide, silicon, photoresist, and silica-based low-k dielectrics. These systems were examined at different levels, ranging from in-depth treatment of C2F6 plasma etch of oxide, to a fairly cursory examination of C4F etch of the low-k dielectric. Simulations using these reaction mechanisms and AURORA, a zero-dimensional model, compare favorably with etch rates measured in three different experimental reactors, plus extensive diagnostic absolute density measurements of electron and negative ions, relative density measurements of CF, CF2, SiF and SiF2 radicals, ion current densities, and mass spectrometric measurements of relative ion densities.

Download or read book Studies of the Effects of Fluorocarbon Deposition and Etching on Silicon and Silicon Dioxide Etching Processes Using CHF3 in an Inductively Coupled Plasma Reactor and the Development of a Reactive Ion Beam System for the Study of Plasma surface Interaction Mechanisms written by Neal R. Rueger and published by . This book was released on 1998 with total page 135 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Symposium on Highly Selective Dry Etching and Damage Control written by G. S. Mathad and published by The Electrochemical Society. This book was released on 1993 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Miniaturized Transistors written by Lado Filipovic and published by MDPI. This book was released on 2019-06-24 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.

Download or read book Plasma Processing written by R. G. Frieser and published by . This book was released on 1981 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dissertation Abstracts International written by and published by . This book was released on 1999 with total page 708 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma Etching Processes for Sub quarter Micron Devices written by G. S. Mathad and published by The Electrochemical Society. This book was released on 2000 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dry Etching Technology for Semiconductors written by Kazuo Nojiri and published by Springer. This book was released on 2014-10-25 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes. The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc.

Download or read book Inductively Coupled Plasma Etching of III N Semiconductors written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The principal focus of this research was the employment of an in-house designed and constructed inductively coupled plasma (ICP) system for integrated studies pertaining to the etching rates and etching selectivity among AlN, GaN, and Al(x)Ga(1-x)N. An (ICP) system was chosen because of its high plasma density and low cost relative to other high-density plasma etching systems. The etch rates were studied as a function of ICP power, pressure, DC bias, and gas composition. The use of a mixture of 2 sccm BCl3 and 18 sccm Cl2 resulted in a maximum etch rate of 2.2 microns/min for GaN as well as nearly vertical sidewalls with proper masking. A selectivity value, i.e. the ratio of the etch rates between two materials, as high as 48 was achieved between GaN and AlN with the addition of low concentrations of O2 to a Cl2/Ar chemistry. The use of another selectivity technique, namely, low DC biases resulted in a maximum selectivity of 38. The mechanisms responsible for the GaN etching were determined by monitoring both the ion density with a Langmuir probe and the relative Cl radical density with an optical emission spectrometer. Increasing the ion density resulted in a non-linear increase in the etch rates; increasing the Cl radical density had a minim al affect on etch rate.

Download or read book Sidewall Profiles and Etching Mechanisms in an Inductively Coupled Plasma for Silicon Silicon Dioxide and Lithium Niobate written by Lirong Sun and published by . This book was released on 2009 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 1997 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma Etching and Reactive Ion Etching written by J. W. Coburn and published by . This book was released on 1982 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1995 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dry Etching Using NF3 Ar and NF3 He Plasmas written by J. Barkanic and published by . This book was released on 1984 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dry etching of silicon, silicon dioxide and photoresist has been studied using NF3 plasmas diluted with helium and argon in both reactive ion etch and plasma etch modes. NF3 concentrations in Ar and He ranged from 10 to 80% for these experiments. Power densities varied from 0.02 to 0.8W/cm2 and pressure from 15 to 500 ?m depending on the etching mode selected. Etch rates increased with power density in both PE and RIE modes. Si etch rates as high as 14800Å/min. were obtained with an 80% NF3/Ar mixture at 0.8W/cm2 and 500 ?m pressure. Oxide etch rates varied from 30 to 1500Å/min. depending on mode selected. Silicon over oxide selectivity tended to be higher for low power densities for all mixtures studied in either PE or RIE mode. Values obtained were ~ 30 to 40 for low power densities (0.12 W/cm2) and ~ 5 for the highest power density used. Selectivities were higher in PE than RIE mode. X-ray photoelectron spectroscopy analysis of etched Si, SiO2, and photoresist coated samples indicated that the surface layer had become fluorinated. Photoresist etch rates of ~ 500Å/min. were measured for positive photoresist etched in a 40% NF3/He plasma. Loading experiments indicated 10 and 13% decreases in Si and SiO2 etch rates respectively, as the area being etched doubled and, the uniformity of etch rate was approximately 7% over the entire batch.