Download or read book Measurement Techniques for High Power Semiconductor Materials and Devices written by and published by . This book was released on 1977 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Measurement Techniques for High Power Semiconductor Materials and Devices written by W. R. Thurber and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Measurement Techniques for High Power Semiconductor Materials and Devices written by and published by . This book was released on 1978 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Measurement Techniques for High Power Semiconductor Materials and Devices written by R. C. Larrabee and published by . This book was released on 1981 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Measurement Techniques for High Power Semiconductor Materials and Devices written by Center for Electronics and Electrical Engineering (U.S.). Electron Devices Division and published by . This book was released on 1978 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Measurement Techniques for High Power Semiconductor Materials and Devices written by D. L. Blackburn and published by . This book was released on 1977 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Measurement techniques for high power semiconductor materials and devices written by and published by . This book was released on 1978 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Measurement Techniques for High Power Semiconductor Materials and Devices written by and published by . This book was released on 1977 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Measurement Techniques for High Power Semiconductor Materials and Devices written by Center for Electronics and Electrical Engineering (U.S.). Electron Devices Division and published by . This book was released on 1978 with total page 77 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Measurement Techniques for High Power Semiconductor Materials and Devices written by F. F. Oettinger and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Measurement Techniques for High Power Semiconductor Materials and Devices Annual Report January 1 December 31 1977 Photovoltaic Technique Deep Level Measurements and Spreading Resistance Measurements written by and published by . This book was released on 1978 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Results of NBS research directed toward the development of measurement methods for semiconductor materials and devices which will lead to more effective use of high-power semiconductor devices in applications for energy generation, transmission, conversion, and conservation are reported. It responds to national needs arising from the rapidly increasing demands for electricity and the present crisis in meeting long-term energy demands. Emphasis is on the development of measurement methods for materials for thyristors and rectifier diodes. Application of this measurement technology will, for example, enable industry to make devices with higher individual power handling capabilities, thus permitting very large reductions in the cost of power handling equipment and fostering the development of direct current (dc) transmission lines to reduce energy waste and required rights-of-way. The major tasks under this project are: (1) to evaluate the feasibility of the photovoltaic method as a rapid, nondestructive technique for characterizing the resistivity uniformity of high-resistivity, large-diameter silicon slices; (2) to evaluate the use of thermally stimulated current and capacitance measurements and other deep level measurement techniques as a means for characterizing lifetime controlling or leakage source defects in power grade silicon material and devices; and (3) to develop procedures to enable spreading resistance measurements of thyristor starting material and layer profiles to be made on a reliable basis.

Download or read book Measurement Techniques for High Power Semiconductor Materials and Devices written by F. F. Oettinger and published by . This book was released on 1978 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Measurement Techniques for High Power Semiconductor Materials and Devices written by D. L. Blackburn and published by . This book was released on 1977 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Measurement Techniques for High Power Semiconductor Materials and Devices written by W. Robert Thurber and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Measurement Techniques for High Power Semiconductor Materials and Devices written by R.C. Larrabee and published by . This book was released on 1980 with total page 46 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Measurement Techniques for High Power Semiconductor Materials and Devices written by and published by . This book was released on 1980 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Measurement Techniques for High power Semiconductor Materials and Devices Annual Report October 1 1980 December 31 1981 For Calculating Excess carrier Lifetime in Silicon written by and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This annual report describes results of NBS research directed toward the development of measurement methods for semiconductor materials and devices which will lead to more effective use of high-power semiconductor devices in applications for energy generation, transmission, conversion, and conservation. Emphasis is on the development of measurement methods for power-device-grade silicon. Major accomplishments during this reporting period were : (1) characterizing by deep level transient spectroscopy (DLTS) the energy levels in silicon power rectifier diodes, (2) writing of a computer program to predict lifetime-related parameters using as input the measured properties of the deep energy levels, (3) developing a novel method to detect nonexponential transients using a conventional double-boxcar DLTS system, (4) analyzing transient capacitance measurements to extend the techniques to nonexponential decays, (5) using a platinum resistance thermometer to calibrate temperature sensing diodes to obtain the precision needed for careful isothermal capacitance measurements, and (6) utilizing trap changing time as a technique to resolve overlapping DLTS peaks in sulfur-doped silicon.